1N6638US, 1N6642US, 1N6643US
VOIDLESS HERMETICALLY SEALED
SWITCHING DIODES
Qualified per MIL-PRF-19500/578
DESCRIPTION
Available on
commercial
versions
Qualified Levels:
JAN, JANTX,
JANTXV and JANS
This popular surface mount equivalent JEDEC registered switching/signal diodes are military
qualified and available with internal metallurgical bonded construction. These small low
capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a
“D-5D” package. They may be used in a variety of fast switching applications including
computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire
memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety
of other switching/signal diodes.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
JEDEC registered surface mount equivalents of 1N6638, 1N6642, and 1N6643.
Ultra fast recovery time.
Very low capacitance.
Metallurgically bonded.
Non-cavity glass package.
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/578.
Replacements for 1N4148UR, 1N4148UR-1, 1N4150UR-1, and 1N914UR.
RoHS compliant devices available (commercial grade only).
“D” SQ-MELF
(D-5D) Package
Also available in:
“D” Package
(axial-leaded)
1N6638_42_43
APPLICATIONS / BENEFITS
Small size for high density mounting (see package illustration).
Ideal for:
High frequency data lines
RS-232 & RS–422 Interface Networks
Ethernet: 10 Base T
Switching core drivers
LAN
Computers
MAXIMUM RATINGS
@ T
A
= +25
o
C unless otherwise noted.
Parameters/Test Conditions
Junction and Storage Temp
Thermal Resistance Junction-to-End Cap
Thermal Resistance Junction-to-Ambient
(1)
Peak Forward Surge Current @ T
A
= +25
o
C
(Test pulse = 8.3 ms, half-sine wave.)
Average Rectified Forward Current @ T
A
= +75
o
C
(Derate at 4.6 mA/°C Above T
EC
= + 110 °C)
Breakdown Voltage:
1N6638US
1N6642US
1N6643US
Working Peak Reverse Voltage:
1N6638US
1N6642US
1N6643US
Symbol
T
J
and T
STG
R
ӨJEC
R
ӨJA
I
FSM
I
O
V
BR
Value
-65 to +175
40
250
2.5
300
150
100
75
125
75
50
Unit
C
C/W
o
C/W
A
o
o
mA
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
Tel: (978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
V
RWM
V
NOTES:
1. T
A
= +75 °C on printed circuit board (PCB), PCB = FR4 - .0625 inch (1.59 mm) 1-layer 1-Oz Cu,
horizontal, in still air; pads for US = .061 inch (1.55 mm) x .105 inch (2.67 mm); R
ΘJA
with a defined PCB
thermal resistance condition included, is measured at I
O
= 300 mA.
T4-LDS-0218-1, Rev. 2 (11/07/14)(111513)
©2014 Microsemi Corporation
Page 1 of 5
1N6638US, 1N6642US, 1N6643US
MECHANICAL and PACKAGING
CASE: Voidless hermetically sealed hard glass.
TERMINALS: Tin-Lead plate with >3% Lead. Solder dip is available upon request.
MARKING: Body painted and alpha numeric.
POLARITY: Cathode indicated by band.
Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN Level
JANTX = JANTX Level
JANTXV = JANTXV Level
JANS = JANS Level
Blank = commercial
JEDEC type number
See
Electrical Characteristics
table
1N6638
US
(e3)
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Surface Mount Package
Symbol
V
BR
V
RWM
V
F
I
R
C
t
rr
SYMBOLS & DEFINITIONS
Definition
Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature
range.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
temperature.
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is
reached.
ELECTRICAL CHARACTERISTICS
@ 25
o
C
unless otherwise noted.
MAXIMUM
FORWARD
VOLTAGE
V
F
@ I
F
MAXIMUM DC REVERSE CURRENT
REVERSE
RECOVERY
TIME
t
rr
(Note 1)
MAXIMUM
FORWARD
RECOVERY
VOLTAGE AND
TIME
I
F
=200mA, t
r
=1ns
V
FRM
ns
4.5
5.0
6.0
V
5.0
5.0
5.0
t
fr
ns
20
20
20
MAXIMUM
JUNCTION
CAPACITANCE
f = 1 MHz
Vsig = 50 mV
(p-p)
V
R
=0 V
pf
2.5
5.0
5.0
V
R
=1.5 V
pf
2.0
2.8
2.8
TYPE
NUMBER
I
R1
V
R
=
20 V
V @ mA
0.8 V @ 10 mA
0.8 V @ 10 mA
0.8 V @ 10 mA
V @ mA
1.1 V @ 200 mA
1.2 V @ 100 mA
1.2 V @ 100 mA
nA
35
25
50
I
R2
V
R
=V
RWM
1N6638US
1N6642US
1N6643US
nA
500
500
500
I
R3
V
R
=20 V
T
A
=
o
+150 C
A
50
50
75
I
R4
V
R
=V
RWM
T
A
=
o
+150 C
A
100
100
100
NOTE:
1. Reverse Recovery Time Test Conditions – I
F
=I
R
=10 mA, I
R(REC)
= 1.0 mA, C=3 pF, R
L
= 100 ohms.
T4-LDS-0218-1, Rev. 2 (11/07/14)(111513)
©2014 Microsemi Corporation
Page 2 of 5
1N6638US, 1N6642US, 1N6643US
GRAPHS
Sinewave Operation Maximum I
O
Rating (mA)
T
A
(
o
C
) Ambient Temperature
FIGURE 1
Temperature – Current Derating
Thermal Impedance (
o
C/W)
Time (s)
FIGURE 2
Maximum Thermal Impedance at
T
A
= 55
o
C
T4-LDS-0218-1, Rev. 2 (11/07/14)(111513)
©2014 Microsemi Corporation
Page 3 of 5
1N
N6638US 1N664
S,
42US, 1N
N6643US
S
GRAPH (continue
HS
ed)
Thermal Impedance (
o
C/W)
Time (s)
FIGURE 3
F
Maxim
mum Therma Impedance at
T
EC
= 25
o
C
al
T4-LD
DS-0218-1, Rev. 2 (11/07/14)
(111513)
)
©2014 Microsemi Corpor
ration
Page 4 of 5
1N6638US, 1N6642US, 1N6643US
PACKAGE DIMENSIONS
D-5D
INCH
DIM
BD
ECT
BL
S
MIN
0.070
0.019
0.165
MAX
0.085
0.028
0.195
MILLIMETERS
MIN
1.78
0.48
4.19
MAX
2.16
0.71
4.95
0.003 MIN.
0.08 MIN.
NOTES:
1. Dimensions are in inches. Millimeters are given for general information only.
2. Dimensions are pre-solder dip.
3. U-suffix parts are structurally identical to the US-suffix parts.
4. In accordance with ASME Y14.5M, diameters are equivalent to
Φx
symbology.
T4-LDS-0218-1, Rev. 2 (11/07/14)(111513)
©2014 Microsemi Corporation
Page 5 of 5
GD32 MCU
