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JANTXV1N6109A

Trans Voltage Suppressor Diode, 500W, 9.9V V(RWM), Bidirectional, 1 Element, Silicon,

器件类别:分立半导体    二极管   

厂商名称:Bkc Semiconductors Inc

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器件:JANTXV1N6109A

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器件参数
参数名称
属性值
是否Rohs认证
不符合
Reach Compliance Code
unknown
最小击穿电压
11.7 V
击穿电压标称值
13 V
外壳连接
ISOLATED
最大钳位电压
19 V
配置
SINGLE
二极管元件材料
SILICON
二极管类型
TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码
O-LALF-W2
JESD-609代码
e0
最大非重复峰值反向功率耗散
500 W
元件数量
1
端子数量
2
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
极性
BIDIRECTIONAL
认证状态
Not Qualified
最大重复峰值反向电压
9.9 V
最大反向电流
20 µA
表面贴装
NO
技术
AVALANCHE
端子面层
Tin/Lead (Sn/Pb)
端子形式
WIRE
端子位置
AXIAL
Base Number Matches
1
文档预览
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 23 October 1999.
INCH-POUND
MIL-PRF-19500/516D
23 July 1999
SUPERSEDING
MIL-S-19500/516C
20 January 1995
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE SILICON, BIPOLAR TRANSIENT VOLTAGE
SUPPRESSOR, TYPES 1N6102 THROUGH 1N6137, 1N6102A THROUGH 1N6137A,
1N6138 THROUGH 1N6173, 1N6138A THROUGH 1N6173A,
1N6102US THROUGH 1N6137US, 1N6102AUS THROUGH 1N6137AUS,
1N6138US THROUGH 1N6173US, 1N6138AUS THROUGH 1N6173AUS,
JAN, JANTX, JANTXV, JANHC, JANKC, AND JANS
This specification is approved for use within US Army Laboratory
Command, Department of the Army, and is available for use by all
Departments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 watt and 1,500 watt peak pulse power transient
voltage suppressor diodes. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two levels of product assurance are provided for die. The suffix "A" denotes a five percent voltage tolerance.
1.2 Physical dimensions. See figure 1, figure 2 (surface mount), and figures 3 and 4 (die) herein.
1.3 Maximum ratings. Maximum ratings are as shown in columns 4, 6, and 7 of table II herein and as follows:
PR =
2 W (for 500 W peak pulse power devices) and 3 W (for 1,500 W peak pulse power devices) at TA = +25°C (see figure 5
for derating).
3 W (for 500 W peak pulse power devices) and 5 W (for 1,500 W peak pulse power devices) at TL = +75°C for L = 0.375
inch (9.53 mm) (see figure 6).
PR =
PPR = 500 W (1N6102 through 1N6137 (including A and US suffix versions)) and 1,500 W (1N6138 through 1N6173 (including
A and US suffix versions)) at tp = 1 ms (see figure 7).
-55°C
Top
+175°C, -55°C
TSTG
+175°C (ambient temperatures).
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2 and 4 of table II herein.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St.,
Columbus, OH 43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
AMSC N/A
Distribution Statement A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/516D
Dimensions
1N6102 through 1N6137
1N6102A through 1N6137A
Inches
Millimeters
Min
Max
Min
Max
.085
.140
2.16
3.56
.140
.185
3.56
4.70
.026
.033
0.66
0.84
1.00
1.30
25.4
33.02
.030
0.76
1N6138 through 1N6173
1N6138A through 1N 6173A
Inches
Millimeters
Min
Max
Min
Max
.135
.185
3.43
4.70
.140
.195
3.56
4.95
.036
.042
0.92
1.07
1.00
1.30
25.4
33.02
.030
0.76
Ltr.
BD
BL
LD
LL
L1
Notes
3
4
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimension BD shall be measured at the largest diameter.
4. Dimension L1 lead diameter uncontrolled in this area.
5. Symbol for internal construction of a bipolar transient suppressor.
FIGURE 1. Semiconductor device, diode, types 1N6102 through 1N6173
and 1N6102A through 1N6173A.
2
MIL-PRF-19500/516D
Ltr.
BD
BL
ECT
S
Dimensions
D-5B
D-5DC
1N6102US through 1N6137US,
1N6138US through 1N6173US
1N6102AUS through 1N6137AUS
1N6138AUS through 1N6173AUS
Inches
Millimeters
Inches
Millimeters
Min
Max
Min
Max
Min
Max
Min
Max
.137
.148
3.48
3.76
.183
.202
4.65
5.13
.200
.225
5.08
5.72
.205
.245
5.21
6.22
.019
.028
0.48
0.71
.019
.028
0.48
0.71
.003
0.80
.003
0.80
Notes
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. In accordance with ANSI Y14.5M, diameters are equivalent to
φx
symbology.
4 Minimum clearance of glass body to mounting surface on all orientations.
FIGURE 2. Semiconductor device, diode 1N6102US through 1N6173US, 1N6102AUS through 1N6173AUS.
3
MIL-PRF-19500/516D
A - version
Dimensions
Ltr
φA
B
1N6103 through 1N6137
1N6103A through 1N6137A
Inches
Millimeters
Min
Max
Min
Max
.087
.093
2.21
2.36
.030
.040
0.76
1.02
Inches
Min
.124
.030
1N6139 through 1N6173
1N6139A through 1N6173A
Millimeters Inches
Millimeters
Max
Min
Max
.130
3.15
3.30
.040
0.76
1.02
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are for general information only.
3. Silver plate 250 microinches nominal on all surfaces of three discs.
FIGURE 3. Physical dimensions, JANHC and JANKC die (A-version), 1N6102
through 1N6173, 1N6102A through 1N6173A.
4
MIL-PRF-19500/516D
B - version
Dimensions
Ltr
φA
B
1N6103 through 1N6137
1N6103A through 1N6137A
Inches
Millimeters
Min
Max
Min
Max
.087
.093
2.21
2.36
.110
.120
2.79
3.05
Inches
Min
.124
.110
1N6139 through 1N6173
1N6139A through 1N6173A
Millimeters Inches
Millimeters
Max
Min
Max
.130
3.15
3.30
.120
2.79
3.05
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are for general information only.
3. Silver thickness 120 microinches nominal on all discs.
FIGURE 4. Physical dimensions, JANHC and JANKC die (B-version), 1N6102
through 1N6173, 1N6102A through 1N6173A.
5
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