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JANTXV1N750CUR-1

Zener Diode, 4.7V V(Z), 2%, 0.5W, Silicon, Unidirectional, DO-213AA,

器件类别:分立半导体    二极管   

厂商名称:Compensated Devices Inc

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器件参数
参数名称
属性值
厂商名称
Compensated Devices Inc
Reach Compliance Code
unknown
其他特性
METALLURGICALLY BONDED
外壳连接
ISOLATED
配置
SINGLE
二极管元件材料
SILICON
二极管类型
ZENER DIODE
JEDEC-95代码
DO-213AA
JESD-30 代码
O-LELF-R2
湿度敏感等级
NOT SPECIFIED
元件数量
1
端子数量
2
封装主体材料
GLASS
封装形状
ROUND
封装形式
LONG FORM
峰值回流温度(摄氏度)
NOT SPECIFIED
极性
UNIDIRECTIONAL
最大功率耗散
0.5 W
认证状态
Not Qualified
标称参考电压
4.7 V
表面贴装
YES
技术
ZENER
端子形式
WRAP AROUND
端子位置
END
处于峰值回流温度下的最长时间
NOT SPECIFIED
最大电压容差
2%
工作测试电流
20 mA
Base Number Matches
1
文档预览
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 3 August 2004.
INCH-POUND
MIL-PRF-19500/127P
3 May 2004
SUPERSEDING
MIL-PRF-19500/127N
09 July 1999
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH
1N4372AUR-1 AND 1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1
THROUGH 1N759C-1, 1N4370CUR-1 THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1,
1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1 THROUGH 1N759D-1, 1N4370DUR-1 THROUGH
1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS level (see 6.4).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall
consist of this specification sheet and MIL-PRF-19500.
1. SCOPE
* 1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator
diodes with voltage tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each
encapsulated device type as specified in MIL-PRF-19500. Two level of product assurance is provided for each
unencapsulated device .
1.2 Physical dimensions. See 3.4 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures
3 and 4 for die.
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.9) herein and
as follows:
P
T
= 500 mW, (DO-35) at T
L
= +50
°
C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175
°
C.
P
T
= 500 mW, (DO-213AA) at T
EC
= +125
°
C, derate to 0 at +175
°
C. -65
°
C
T
J
+175
°
C; -65
°
C
T
STG
+175
°
C.
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center, Columbus,
ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, or emailed to
Semiconductor@dscc.dla.mil.
Since
contact information can change, you may want to verify the currency of this address information using the ASSIST
Online database at
http://www.dodssp.daps.mil.
AMSC N/A
FSC 5961
MIL-PRF-19500/127P
* 1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in maximum and primary
test ratings (see 3.9) herein and as follows:
2.4 V dc
V
Z
12 v dc.
1N4370A-1 through 1N4372A-1 and 1N746A-1 through 1N759A-1 are
±
5 percent voltage tolerance.
1N4370C-1 through 1N4372C-1 and 1N746C-1 through 1N759C-1 are
±
2 percent voltage tolerance.
1N4370D-1 through 1N4372D-1 and 1N746D-1 through 1N759D-1 are
±
1 percent voltage tolerance.
Thermal resistance:
R
θ
JL
= 250
°
C/W maximum at L = .375 inch (9.53 mm) (D0-35).
R
θ
JEC
= 100
°
C/W maximum. Junction to end-caps (D0-213AA).
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
*
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
*
-
Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or
http://www.dodssp.daps.mil
from the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
* 3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
2
MIL-PRF-19500/127P
Symbol
Inches
BD
BL
LD
LL
LU
Min
.055
.120
.018
1.000
Max
.090
.200
.023
1.500
.050
Dimensions
Millimeters
Min
1.40
3.05
0.46
25.40
Max
2.29
5.08
0.56
38.10
1.27
Notes
3
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Symbol BD shall be measured at the largest diameter.
4. Within LU, lead diameter may vary to allow for flash, lead finish build-up, and minor irregularities
other than heat slugs.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φ
X symbology.
FIGURE 1. Physical dimensions for types 1N4370A-1 through 1N4372A-1, 1N4370C-1 through 1N4372C-1,
1N4370D-1 through 1N4372D-1, 1N746A-1 through 1N759A-1, 1N746C-1 through 1N759C-1, and
1N746D-1 through 1N759D-1 (DO-35).
3
MIL-PRF-19500/127P
Symbol
Inches
BL
BD
ECT
S
Min
.130
.063
.016
.001 min
Max
.146
.067
.022
Dimensions
Millimeters
Min
3.30
1.60
0.41
0.03 min
Max
3.70
1.70
0.55
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φ
X symbology.
FIGURE 2. Physical dimensions for types 1N4370AUR-1 through 1N4372AUR-1, 1N4370CUR-1 through
1N4372CUR-1, 1N4370DUR-1 through 1N4372DUR-1, 1N746AUR-1 through 1N759AUR-1,
1N746CUR-1 through 1N759CUR-1, and 1N746DUR-1 through 1N759DUR-1 (DO-213AA).
4
MIL-PRF-19500/127P
(A – version)
Ltr
Inches
A
B
Min
.021
.013
Max
.025
.017
Dimensions
Millimeters
Min
Max
0.53
0.63
0.33
0.43
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The physical characteristics of the die thickness are .010
±
.002 (0.25
mm
±
0.051 mm). Metallization is top = (anode)-AL, back: (cathode)-AU.
AL thickness = 25,000 Å minimum, AU thickness = 4,000 Å minimum.
4. Circuit layout data: For zener operation, cathode must be operated
positive with respect to anode.
FIGURE 3. Physical dimensions (JANHCA and JANKCA die dimensions).
5
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