JIEJIE MICROELECTRONICS CO.,Ltd
JME070-12/16/18/20
Description:
1) Chip: double mesa SCRs of reverse blocking high-voltage
2) Chip area: 9.8mm×9.8mm (edge gate thyristor)
3) Technology: mesa glass passivation technology, multilayer metallization
technology and non-void welding by vacuum welding technology
Typical Application:
Reactive power compensation,
solid state relay, power module, etc.
Absolute Maximum Ratings
(Packaged into modules, unless otherwise specified, T
C
=25℃)
Parameter
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Average on-state current
Peak on-state surge current
I
2
t value for fusing
T
j
=25℃
T
j
=25℃
T
C
=80℃
tp=10ms
tp=10ms
V
D
=2/3V
DRM
I
G
=0.3A
Critical rate of rise of on-state current
tp=200μs T
j
=125℃
dI
G
/dt=0.3A/μs
dI/dt
150
A/μs
Test Conditions
Symbol
T
j
V
DRM
V
RRM
I
T(AV)
I
TSM
I
2
t
Values
-40-125
1200/1600/1800/2000
1200/1600/1800/2000
70
1500
11250
Unit
℃
V
V
A
A
A
2
s
Electrical Characteristics
(Packaged into modules, unless otherwise specified, T
C
=25℃)
Parameter
Peak on-state voltage
Test Conditions
I
T
=210A tp=380μs
V
D
=V
DRM
Repetitive peak off-state current
T
C
=25℃
T
C
=125℃
V
R
=V
RRM
Repetitive peak reverse current
T
C
=25℃
T
C
=125℃
Triggering gate current
Latching current
Holding current
Triggering gate voltage
TEL：+86-513-83639777
Symbol
V
TM
Values
≤1.8
Unit
V
I
DRM1
I
DRM2
I
RRM1
I
RRM2
I
GT
I
L
I
H
V
GT
≤50
≤10
≤50
≤10
10-80
≤200
≤150
≤2
μA
mA
μA
mA
mA
mA
mA
V
V
D
=12V R
L
=30Ω
I
G
=1.2 I
GT
I
T
=1A
V
D
=12V R
L
=30Ω
- 1 / 3-
http://www.jjwdz.com
JIEJIE MICROELECTRONICS CO.,Ltd
Non triggering gate voltage
Critical rate of rise of voltage
V
D
=V
DRM
T
j
=125℃
V
D
=2/3V
DRM
T
j
=125℃
Gate Open
V
GD
dV/dt
≥0.25
≥1000
V
V/μs
Mechanical Characteristics
Module size
Module thickness
Welding area of cathode electrode
Welding area of control electrode
11 mm×11 mm
1.6 mm
8.1 mm×8.1 mm
2.3 mm×1 mm
A
G
K
symbol
Working Conditions
1) No severe mechanical shock as impact and drop off in the process of transportation, storage and working of
product.
2) Storage conditions
Temperature: 5~40℃
Relative humidity: ≤45%
Storage time: 3 days for the open package; 3 months for the closed package
3) Welding conditions
Recommended solder component: Sn63Sb37 (or lead-free solder of liquid quadrant less than 240℃)
Recommended soldering conditions: shown in Table 1
4) Welding in the gate spot is recommended to be completed one-time by using fixture. If it is necessary to use
a soldering iron, the temperature of soldering iron is controlled within 280℃ and time is controlled within 20s.
TEL：+86-513-83639777
- 2 / 3-
http://www.jjwdz.com
JIEJIE MICROELECTRONICS CO.,Ltd
Table 1
Sn63Sb37 Soldering conditions
Average heating rate
Low limit of temperature
Preheating activation
T
S
(Min)
3℃/s (Max)
100℃
150℃
60 ~ 90s
183℃ (Sn63Sb37)
240℃ (+0/-5℃)
10½30s
40½60s
3.5℃/s
300 ~ 360s
Upper limit of temperature T
S
(Max)
Time (min ~ max)
Melting point temperature
Peak temperature
t
S
T
L
T
P
t
p
Reflow zone
Reflow time
(Peak temperature ±5℃)
Melting time
T
L
Maximum cooling rate
Recommended process time
250℃
200℃
150℃
100℃
Ts(min)
T
p
T
L
Ts(max)
Sn63Pb37
P
(10-30S)
L
(40-60S)
t
t
60-90S
t
s
Ordering Information
J
JieJie Microelectronics Co.,Ltd
M
E
070
-16
Module of series
E:Edge and corner gate
I
T(AV)
=70A
12:V
DRM
/V
RRM
≥1200V
16:V
DRM
/V
RRM
≥1600V
18:V
DRM
/V
RRM
≥1800V
20:V
DRM
/V
RRM
≥2000V
TEL：+86-513-83639777
- 3 / 3-
http://www.jjwdz.com
