An
IXYS
Company
Provisional Data
(Development Type No. KX094FC450-520)
Absolute Maximum Ratings
VOLTAGE RATINGS
V
DRM
V
DSM
V
RRM
V
RSM
MAXIMUM
LIMITS
4500-5200
4500-5200
4500-5200
4600-5300
Medium Voltage Thyristor
Types K3503F#450 to K3503F#520
Repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
Page 1 of 11
OTHER RATINGS
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(AV)M
I
T(RMS)
I
T(d.c.)
I
TSM
I
TSM2
It
It
2
2
Maximum average on-state current, T
case
=55°C, (note 2)
Maximum average on-state current, T
sink
=55°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 2)
Maximum average on-state current. T
sink
=85°C, (note 3)
Nominal RMS on-state current, T
sink
=25°C, (note 2)
D.C. on-state current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
2
2
(di/dt)
cr
V
RGM
P
GM
T
j op
T
stg
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
P
G(AV)
Operating temperature range
Storage temperature range
Provisional Data Sheet. Types K3503F#450 to K3503F#520 Issue 1a
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Critical rate of rise of on-state current (continuous, 50Hz), (Note 6)
Critical rate of rise of on-state current (repetitive, 60s), (Note 6)
Critical rate of rise of on-state current (non-repetitive), (Note 6)
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 125°C T
j
initial.
6)
V
D
=67% V
DRM
, I
FG
=2A, t
r
≤0.5µs,
T
case
=125°C.
November, 2004
UNITS
V
V
V
V
WESTCODE
Date:- 17 Nov, 2004
Data Sheet Issue:- 1a
MAXIMUM
LIMITS
3898
3503
2416
1472
6898
6021
43.2
47.5
9.33×10
250
500
1000
5
5
50
-40 to +125
-40 to +150
6
6
UNITS
A
A
A
A
A
A
kA
kA
As
As
A/µs
V
W
W
°C
°C
2
2
11.28×10
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An IXYS Company
Characteristics
Medium Voltage Thyristor Types K3503F#450 to K3503F#520
V
TM
V
T0
r
T
I
DRM
I
RRM
V
GT
I
GT
V
GD
I
H
t
gd
t
gt
Q
rr
Q
ra
I
rm
t
rr
t
q
R
thJC
R
thJK
F
W
t
Maximum peak on-state voltage
Threshold voltage
Slope resistance
Peak off-state current
Peak reverse current
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Holding current
Gate-controlled turn-on delay time
Turn-on time
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Turn-off time
-
-
-
-
1000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.35
3.44
1.375
0.196
-
300
3.0
I
TM
=5000A
V
D
=10V, I
T
=3A
November, 2004
PARAMETER
MIN.
TYP.
MAX. TEST CONDITIONS
(Note 1)
UNITS
V
V
V
mΩ
V/µs
mA
mA
V
mA
V
mA
µs
µs
µC
µC
A
µs
µs
K/W
K/W
K/W
kN
kg
I
TM
=10500A
Thermal resistance, junction to case
Thermal resistance, junction to heatsink
Mounting force
Weight
Notes:-
1)
Unless otherwise indicated T
j
=125
°
C.
2)
For other clamp forces consult factory.
Provisional Data Sheet. Types K3503F#450 to K3503F#520 Issue 1a
Notes on rupture rated packages.
This product is available with a non-rupture rated package.
For additional details on these products, please consult factory.
5500
230
48
6500
-
-
-
-
-
800
-
-
1600
-
-
-
-
-
-
-
81
-
-
99
-
2.8
Page 2 of 11
Rated V
DRM
-
-
300
600
Rated V
RRM
T
j
=25°C
-
-
0.25
Rated V
DRM
-
1000
3.0
-
T
j
=25°C
1.5
3.0
6.0
8000
0.0055 Double side cooled
0.0065 Double side cooled
0.0130 Single side cooled
Note 2
(dv/dt)
cr
Critical rate of rise of off-state voltage
V
D
=80% V
DRM
, linear ramp, gate o/c
V
D
=67% V
DRM
, I
T
=6000A, di/dt=10A/µs,
I
FG
=2A, t
r
=0.5µs, T
j
=25°C
I
TM
=4000A, t
p
=2000µs, di/dt=10A/µs,
V
r
=100V
I
TM
=4000A, t
p
=2000µs, di/dt=10A/µs,
V
r
=100V, V
dr
=80%V
DRM
, dV
dr
/dt=20V/µs
I
TM
=4000A, t
p
=2000µs, di/dt=10A/µs,
V
r
=100V, V
dr
=80%V
DRM
, dV
dr
/dt=200V/µs
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
45
46
48
50
52
V
DRM
V
DSM
V
RRM
V
4500
4600
4800
5000
5200
Medium Voltage Thyristor Types K3503F#450 to K3503F#520
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for T
j
below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
7.0 Rate of rise of on-state current
8.0 Square wave frequency ratings
9.0 Duty cycle lines
Provisional Data Sheet. Types K3503F#450 to K3503F#520 Issue 1a
The maximum un-primed rate of rise of on-state current must not exceed 400A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 200A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
These ratings are given for load component rate of rise of on-state current of 50A/µs.
The 100% duty cycle is represented on the frequency ratings by a straight line. Other duties can be
included as parallel to the first.
Page 3 of 11
V
RSM
V
4600
4700
4900
5100
5300
V
D
V
R
DC V
2100
2120
2160
2200
2240
November, 2004
WESTCODE
An IXYS Company
10.0 Gate Drive
Medium Voltage Thyristor Types K3503F#450 to K3503F#520
I
GM
4A/µs
t
p1
The magnitude of I
GM
should be between five and ten times I
GT
, which is shown on page 2. Its duration
(t
p1
) should be 20µs or sufficient to allow the anode current to reach ten times I
L
, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current I
G
should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times I
GT
.
11.0 Computer Modelling Parameters
11.1 Device Dissipation Calculations
2
2
W
AV
and:
Supplementary Thermal Impedance
30°
60°
90°
0.00717
0.0137
0.00707
0.00698
0.01359
0.00697
0.01348
0.01349
0.00687
0.01337
0.00709
0.0136
Form Factors
90°
2
2.22
30°
60°
3.464
3.98
2.449
2.778
Page 4 of 11
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
Where V
T0
=1.375V, r
T
=0.196mΩ,
R
th
= Supplementary thermal impedance, see table below and
ff
= Form factor, see table below.
Conduction Angle
=
∆
T
R
th
∆
T
=
T
j
max
−
T
K
120°
180°
0.00673
0.01323
0.00654
0.01303
0.00689
0.0134
0.00678
0.01328
120°
1.732
1.879
180°
1.414
1.57
Square wave Single Side Cooled
Sine wave Double Side Cooled
Sine wave Single Side Cooled
Conduction Angle
Square wave
Sine wave
Provisional Data Sheet. Types K3503F#450 to K3503F#520 Issue 1a
Square wave Double Side Cooled
I
G
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
270°
0.00652
0.01301
d.c.
0.0065
0.013
270°
1.149
d.c.
1
November, 2004
WESTCODE
An IXYS Company
11.2 Calculating V
T
using ABCD Coefficients
Medium Voltage Thyristor Types K3503F#450 to K3503F#520
V
T
=
A
+
B
⋅
ln
(
I
T
)
+
C
⋅
I
T
+
D
⋅
I
T
25°C Coefficients
A
B
C
D
1.2360916
0.1436956
2.127247×10
-0.02214526
-4
Where
p = 1
to
n, n
is the number of terms in the series and:
t = Duration of heating pulse in seconds.
r
t
= Thermal resistance at time t.
r
p
= Amplitude of p
th
term.
τ
p
= Time Constant of r
th
term.
Term
1
2
The coefficients for this device are shown in the tables below:
−
t
τ
r
t
=
∑
r
p
⋅
1
−
e
p
p
=
1
p
=
n
11.3 D.C. Thermal Impedance Calculation
D.C. Double Side Cooled
3
-3
125°C Coefficients
1.8312616
A
B
-0.1132993
C
1.470865×10
-4
-3
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The
resulting values for V
T
agree with the true device characteristic over a current range, which is limited to
that plotted.
D
7.046997×10
r
p
τ
p
3.424745×10
1.125391
-3
1.745273×10
0.1878348
8.532017×10
0.02788979
D.C. Single Side Cooled
2
3
-3
Term
1
r
p
τ
p
8.375269×10
8.929845
-3
2.518437×10
0.4711304
1.193758×10
0.08221244
Provisional Data Sheet. Types K3503F#450 to K3503F#520 Issue 1a
Page 5 of 11
4
-4
The on-state characteristic I
T
vs. V
T
, on page 6 is represented in two ways;
(i)
the well established V
T0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, D, forming the coefficients of the representative equation for V
T
in
terms of I
T
given below:
3.457329×10
8.430889×10
-4
-3
4
-3
7.45432×10
-4
0.01221961
November, 2004
