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K3N7C1000C-GC150

MASK ROM, 4MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44

器件类别:存储    存储   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
SAMSUNG(三星)
零件包装代码
SOIC
包装说明
SOP,
针数
44
Reach Compliance Code
compliant
ECCN代码
EAR99
最长访问时间
150 ns
备用内存宽度
8
JESD-30 代码
R-PDSO-G44
长度
28.5 mm
内存密度
67108864 bit
内存集成电路类型
MASK ROM
内存宽度
16
功能数量
1
端子数量
44
字数
4194304 words
字数代码
4000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
4MX16
封装主体材料
PLASTIC/EPOXY
封装代码
SOP
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
225
认证状态
Not Qualified
座面最大高度
3.1 mm
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
12.6 mm
Base Number Matches
1
文档预览
K3N7C1000C-GC
64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
FEATURES
Switchable organization
8,388,608 x 8(byte mode)
4,194,304 x 16(word mode)
Fast access time :
100ns(Max.) : C
L
=50pF
120ns(Max.) : C
L
=100pF
Supply voltage : single +5V
Current consumption
Operating : 70mA(Max.)
Standby : 50µA(Max.)
Fully static operation
All inputs and outputs TTL compatible
Three state outputs
Package
-. K3N7C1000C-GC : 44-SOP-600
CMOS MASK ROM
GENERAL DESCRIPTION
The K3N7C1000C-GC is a fully static mask programmable
ROM fabricated using silicon gate CMOS process technology,
and is organized either as 8,388,608 x 8 bit(byte mode) or as
4,194,304 x 16 bit(word mode) depending on BHE voltage
level.(See mode selection table)
This device operates with a 5V single power supply, and all
inputs and outputs are TTL compatible.
Because of its asynchronous operation, it requires no external
clock assuring extremely easy operation.
It is suitable for use in program memory of microprocessor, and
data memory, character generator.
The K3N7C1000C-GC is packaged in a 44-SOP.
FUNCTIONAL BLOCK DIAGRAM
A
21
.
.
.
.
.
.
.
.
A
0
A
-1
. . .
CE
OE
BHE
Pin Name
A
0
- A
21
Q
0
- Q
14
Q
15
/A
-1
Pin Function
Address Inputs
Data Outputs
Output 15(Word mode)/
LSB Address(Byte mode)
Word/Byte selection
Chip Enable
Output Enable
Power ( +5V)
Ground
CONTROL
LOGIC
Q
0
/Q
8
Q
7
/Q
15
X
BUFFERS
AND
DECODER
PIN CONFIGURATION
MEMORY CELL
MATRIX
(4,194,304x16/
8,388,608x8)
A
21
A
18
A
17
A
7
A
6
A
5
1
2
3
4
5
6
7
8
9
11
44 A
20
43 A
19
42 A
8
41 A
9
40 A
10
39 A
11
38 A
12
37 A
13
36 A
14
35 A
15
34 A
16
33 BHE
32 V
SS
31 Q
15
/A
-1
30 Q
7
29 Q
14
28 Q
6
27 Q
13
26 Q
5
25 Q
12
24 Q
4
23 V
CC
Y
BUFFERS
AND
DECODER
SENSE AMP.
DATA OUT
BUFFERS
A
4
A
3
A
2
A
0
A
1
10
CE 12
V
SS
13
OE 14
Q
0
Q
8
15
16
SOP
Q
1
17
Q
9
18
Q
2
Q
10
19
20
Q
3
21
Q
11
22
K3N7C1000C-GC
BHE
CE
OE
V
CC
V
SS
K3N7C1000C-GC
ABSOLUTE MAXIMUM RATINGS
Item
Voltage on Any Pin Relative to V
SS
Temperature Under Bias
Storage Temperature
Symbol
V
IN
T
BIAS
T
Stg
Rating
CMOS MASK ROM
Unit
V
°C
°C
-0.3 to +7.0
-10 to +85
-55 to +150
NOTE
: Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to the
conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to V
SS
, T
A
=0 to 70°C)
Item
Supply Voltage
Supply Voltage
Symbol
V
CC
V
SS
Min
4.5
0
Typ
5.0
0
Max
5.5
0
Unit
V
V
DC CHARACTERISTICS
Parameter
Operating Current
Standby Current(TTL)
Standby Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage, All Inputs
Input Low Voltage, All Inputs
Output High Voltage Level
Output Low Voltage Level
Symbol
I
CC
I
SB1
I
SB2
I
LI
I
LO
V
IH
V
IL
V
OH
V
OL
I
OH
=-400µA
I
OL
=2.1mA
Test Conditions
Cycle=5MHz, all outputs open
CE=OE=V
IL
, V
IN
=0.6V to 2.4V (AC Test Condition)
CE=V
IH
, all outputs open
CE=V
CC
, all outputs open
V
IN
=0 to V
CC
V
OUT
=0 to V
CC
Min
-
-
-
-
-
2.2
-0.3
2.4
-
Max
70
1
50
10
10
V
CC
+0.3
0.8
-
0.4
Unit
mA
mA
µA
µA
µA
V
V
V
V
NOTE
: Minimum DC Voltage(V
IL
) is -0.3V an input pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input pins(V
IH
) is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
MODE SELECTION
CE
H
L
L
OE
X
H
L
BHE
X
X
H
L
Q
15
/A
-1
X
X
Output
Input
Mode
Standby
Operating
Operating
Operating
Data
High-Z
High-Z
Q
0
~Q
15
: Dout
Q
0
~Q
7
: Dout
Q
8
~Q
14
: Hi-Z
Power
Standby
Active
Active
Active
CAPACITANCE
(T
A
=25°C, f=1.0MHz)
Item
Output Capacitance
Input Capacitance
Symbol
C
OUT
C
IN
Test Conditions
V
OUT
=0V
V
IN
=0V
Min
-
-
Max
12
12
Unit
pF
pF
NOTE
: Capacitance is periodically sampled and not 100% tested.
K3N7C1000C-GC
CMOS MASK ROM
AC CHARACTERISTICS
(T
A
=0°C to +70°C, V
CC
=5V±10%, unless otherwise noted.)
TEST CONDITIONS
Item
Input Pulse Levels
Input Rise and Fall Times
Input and Output timing Levels
Output Loads
Value
0.6V to 2.4V
10ns
0.8V and 2.0V
1 TTL Gate and C
L
=50pF or 100pF
READ CYCLE
Item
Read Cycle Time
Chip Enable Access Time
Address Access Time
Output Enable Access Time
Output or Chip Disable to
Output High-Z
Output Hold from Address Change
Symbol
t
RC
t
ACE
t
AA
t
OE
t
DF
t
OH
0
K3N7C1000C-GC10
(C
L
=50pF)
Min
100
100
100
50
20
0
Max
K3N7C1000C-GC12
(C
L
=100pF)
Min
120
120
120
60
20
0
Max
K3N7C1000C-GC15
(C
L
=100pF)
Min
150
150
150
70
30
Max
ns
ns
ns
ns
ns
ns
Unit
TIMING DIAGRAM
READ
ADD
A
0
~A
21
A
-1(*1)
t
ACE
CE
t
OE
OE
t
OH
D
OUT
D
0
~D
7
D
8
~D
15(*2)
VALID DATA
VALID DATA
t
AA
ADD1
t
RC
ADD2
t
DF(*3)
NOTES :
*1. Byte Mode only. A
-1
is Least Significant Bit Address. (BHE = V
IL
)
*2. Word Mode only.(BHE = V
IH
)
*3. t
DF
is defined as the time at which the outputs achieve the open circuit condition and is not referenced to V
OH
or V
OL
level.
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参数对比
与K3N7C1000C-GC150相近的元器件有:K3N7C1000C-GC100、K3N7C1000C-GC15、K3N7C1000C-GC12、K3N7C1000C-GC10、K3N7C1000C-GC120。描述及对比如下:
型号 K3N7C1000C-GC150 K3N7C1000C-GC100 K3N7C1000C-GC15 K3N7C1000C-GC12 K3N7C1000C-GC10 K3N7C1000C-GC120
描述 MASK ROM, 4MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 100ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 150ns, CMOS, PDSO44, 0.600 INCH, SOP-44 MASK ROM, 4MX16, 120ns, CMOS, PDSO44, 0.600 INCH, SOP-44
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)
零件包装代码 SOIC SOIC SOIC SOIC SOIC SOIC
包装说明 SOP, SOP, SOP, SOP44,.63 SOP, SOP44,.63 SOP, SOP44,.63 SOP,
针数 44 44 44 44 44 44
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最长访问时间 150 ns 100 ns 150 ns 150 ns 150 ns 120 ns
备用内存宽度 8 8 8 8 8 8
JESD-30 代码 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44 R-PDSO-G44
长度 28.5 mm 28.5 mm 28.5 mm 28.5 mm 28.5 mm 28.5 mm
内存密度 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit
内存集成电路类型 MASK ROM MASK ROM MASK ROM MASK ROM MASK ROM MASK ROM
内存宽度 16 16 16 16 16 16
功能数量 1 1 1 1 1 1
端子数量 44 44 44 44 44 44
字数 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words 4194304 words
字数代码 4000000 4000000 4000000 4000000 4000000 4000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 4MX16 4MX16 4MX16 4MX16 4MX16 4MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOP SOP SOP SOP SOP SOP
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 225 225 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 225
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 3.1 mm 3.1 mm 3.1 mm 3.1 mm 3.1 mm 3.1 mm
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED 30
宽度 12.6 mm 12.6 mm 12.6 mm 12.6 mm 12.6 mm 12.6 mm
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00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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