型号
- 型号
- 关键词
DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60
厂商名称：SAMSUNG(三星)
厂商官网：http://www.samsung.com/Products/Semiconductor/
下载文档| 型号 | K4C89183AF-GIFB0 | K4C89183AF-GIG70 | K4C89183AF-GCG70 | K4C89183AF-GIF60 |
|---|---|---|---|---|
| 描述 | DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 | DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 | DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 | DDR DRAM, 16MX18, 0.5ns, CMOS, PBGA60, 1 MM PITCH, FBGA-60 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| 零件包装代码 | BGA | BGA | BGA | BGA |
| 包装说明 | BGA, | BGA, | BGA, | BGA, |
| 针数 | 60 | 60 | 60 | 60 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
| 最长访问时间 | 0.5 ns | 0.5 ns | 0.5 ns | 0.5 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 内存密度 | 301989888 bit | 301989888 bit | 301989888 bit | 301989888 bit |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 18 | 18 | 18 | 18 |
| 功能数量 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 |
| 端子数量 | 60 | 60 | 60 | 60 |
| 字数 | 16777216 words | 16777216 words | 16777216 words | 16777216 words |
| 字数代码 | 16000000 | 16000000 | 16000000 | 16000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 组织 | 16MX18 | 16MX18 | 16MX18 | 16MX18 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | BGA | BGA | BGA | BGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY | GRID ARRAY | GRID ARRAY | GRID ARRAY |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 自我刷新 | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 2.625 V | 2.625 V | 2.625 V | 2.625 V |
| 最小供电电压 (Vsup) | 2.375 V | 2.375 V | 2.375 V | 2.375 V |
| 标称供电电压 (Vsup) | 2.5 V | 2.5 V | 2.5 V | 2.5 V |
| 表面贴装 | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | BALL | BALL | BALL | BALL |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |