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K4Q153212M-JL60

EDO DRAM, 512KX32, 60ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70

器件类别：存储    存储   

厂商名称：SAMSUNG(三星)

厂商官网：http://www.samsung.com/Products/Semiconductor/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
SAMSUNG(三星)
零件包装代码
SOJ
包装说明
SOJ, SOJ70,.44,32
针数
70
Reach Compliance Code
compliant
ECCN代码
EAR99
访问模式
FAST PAGE WITH EDO
最长访问时间
60 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-J70
JESD-609代码
e0
长度
28.575 mm
内存密度
16777216 bit
内存集成电路类型
EDO DRAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
70
字数
524288 words
字数代码
512000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
512KX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
SOJ
封装等效代码
SOJ70,.44,32
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
3.3 V
认证状态
Not Qualified
刷新周期
1024
座面最大高度
3.61 mm
自我刷新
YES
最大待机电流
0.0003 A
最大压摆率
0.15 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
J BEND
端子节距
0.8 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
文档预览
K4Q153211M, K4Q153212M
512K x 32Bit CMOS Quad CAS DRAM with EDO
DESCRIPTION
CMOS DRAM
This is a 524,288 x 32 bit Extended Data Out CMOS DRAM. Extended Data Out Mode offers high speed random access of memory cells
within the same row, so called Hyper Page Mode. Power supply voltage (+5.0V or +3.3V), refresh cycle 1K, access time (-50 or -60),
power consumption(Normal or Low power) and SOJ package type are optional features of this family. All of this family have CAS-before-
RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This
512Kx32 EDO Mode Quad CAS DRAM is fabricated using Samsung's advanced CMOS process to realize high band-width, low power
consumption and high reliability.
FEATURES
•
Part Identification
- K4Q153211M-JC (5.0V, 1K Ref.)
- K4Q153211M-JL (5.0V, 1K Ref. LP)
- K4Q153212M-JC (3.3V, 1K Ref.)
- K4Q153212M-JL (3.3V, 1K Ref. LP)
• Extended Data Out Mode operation
(Fast Page Mode with Extended Data Out)
• Four separate CAS pins provide for separate I/O operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Self-refresh capability (L-ver only)
• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Plastic SOJ 400mil x 1125mil package
• Single +5.0V±0.5V power supply(5V product)
• Single +3.3V±0.3V power supply(3.3V product)
•
Active Power Dissipation
Speed
-50
-60
3.3V
-
540
Unit : mW
5.0V
880
825
FUNCTIONAL BLOCK DIAGRAM
•
Refresh Cycles
Part
NO.
153211M-J
153212M-J
V
CC
5.0V
3.3V
Refresh
cycle
1K
1K
Refresh period
Normal
16ms
16ms
L-ver
128ms
128ms
Refresh Timer
Refresh Control
Row Decoder
Sense Amps & I/O
RAS
CAS0-3
W
Control
Clocks
VBB Generator
Vcc
Vss
CAS0
D/I Buffer
CAS0
D/O Buffer
CAS1
D/I Buffer
CAS1
D/O Buffer
OE
CAS2
D/I Buffer
CAS2
D/O Buffer
CAS3
D/I Buffer
CAS3
D/O Buffer
DQ16
to
DQ23
DQ0
to
DQ7
DQ8
to
DQ15
•
Performance Range
Speed
-50
-60
Refresh Counter
t
RAC
50ns
60ns
t
CAC
15ns
17ns
t
RC
84ns
104ns
t
HPC
20ns
27ns
Remark
5.0V only
5V/3.3V
A0 - A9
A0 - A8
Row Address Buffer
Col. Address Buffer
Memory
Array
524,288 x 32
Cells
Column Decoder
DQ24
to
DQ31
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
K4Q153211M, K4Q153212M
CMOS DRAM
PIN CONFIGURATION
(Top Views)
V
CC
DQ0
DQ1
DQ2
DQ3
V
CC
DQ4
DQ5
DQ6
DQ7
N.C
V
CC
DQ8
DQ9
DQ10
DQ11
V
CC
DQ12
DQ13
DQ14
DQ15
N.C
N.C
N.C
N.C
N.C
RAS
A0
A1
A2
A3
A4
A5
A6
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23*
24
25
26
27
28
29
30
31
32
33
34
35
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
V
SS
DQ31
DQ30
DQ29
DQ28
V
SS
DQ27
DQ26
DQ25
DQ24
N.C
V
SS
DQ23
DQ22
DQ21
DQ20
V
SS
DQ19
DQ18
DQ17
DQ16
N.C
CAS0
CAS1
CAS2
CAS3
W
OE
N.C
N.C
N.C
A9
A8
A7
V
SS
Pin Name
A0 - A9
DQ0 - 31
RAS
CAS0 - 3
W
OE
V
SS
V
CC
N.C
Pin Function
Address Inputs
Data In/Out
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Ground
Power(+5V)
Power(+3.3V)
No Connection
* Pin23 : must be NC or V
SS
K4Q153211(2)M-J
J : 400mil 70pin SOJ
K4Q153211M, K4Q153212M
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
3.3V
V
IN,
V
OUT
V
CC
Tstg
P
D
I
OS
Address
-0.5 to +4.6
-0.5 to +4.6
-55 to +150
1
50
Rating
5V
CMOS DRAM
Units
-1.0 to +7.0
-1.0 to +7.0
-55 to +150
1
50
V
V
°C
W
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted
to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70
°C
)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
Min
V
CC
V
SS
V
IH
V
IL
3.0
0
2.2
-0.3
*2
3.3V
Typ
3.3
0
-
-
Max
3.6
0
V
CC
+0.3
*1
0.8
Min
4.5
0
2.4
-1.0
*2
5V
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1.0
*1
0.8
V
V
V
V
Units
*1 : V
CC
+1.3V/15ns(3.3V), V
CC
+2.0V/15ns(5V), Pulse width is measured at V
CC
*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at V
SS
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Max
Parameter
Input Leakage Current (Any input 0≤V
IN
≤V
IN
+0.3V,
all other input pins not under test=0 Volt)
3.3V
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-2mA)
Output Low Voltage Level(I
OL
=2mA)
Input Leakage Current (Any input 0≤V
IN
≤V
IN
+0.5V,
all other input pins not under test=0 Volt)
5V
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-5mA)
Output Low Voltage Level(I
OL
=4.2mA)
Symbol
I
I(L)
I
O(L)
V
OH
V
OL
I
I(L)
I
O(L)
V
OH
V
OL
Min
-5
-5
2.4
-
-5
-5
2.4
-
Max
5
5
-
0.4
5
5
-
0.4
Units
uA
uA
V
V
uA
uA
V
V
K4Q153211M, K4Q153212M
DC AND OPERATING CHARACTERISTICS
(Continued)
Symbol
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
I
CC7
I
CCS
Power
Don't care
Normal
L-ver
Don't care
Don't care
Normal
L-ver
Don't care
L-ver
L-ver
Speed
-50
-60
Don't care
-50
-60
-50
-60
Don't care
-50
-60
Don't care
Don't care
Max
K4Q153212M-J
-
150
-
1
-
150
-
100
500
300
-
150
300
200
CMOS DRAM
K4Q153211M-J
160
150
2
1
160
150
110
100
1000
500
160
150
500
300
Units
mA
mA
mA
mA
mA
mA
mA
mA
uA
uA
mA
mA
uA
uA
I
CC1
* : Operating Current ( RAS and CAS cycling @t
RC
=min. )
I
CC2
: Standby Current ( RAS = CAS = W = V
IH
)
I
CC3
* : RAS-only Refresh Current ( CAS = V
IH
, RAS, Address cycling @t
RC
=min. )
I
CC4
* : Hyper Page Mode Current ( RAS = V
IL
, CAS, Address cycling @t
HPC
=min. )
I
CC5
: Standby Current ( RAS = CAS = W = V
CC
-0.2V )
I
CC6
* : CAS-Before-RAS Refresh Current ( RAS, CAS cycling @t
RC
=min. )
I
CC7
: Battery back-up current, Average power supply current, Battery back-up mode
Input high voltage(V
IH
) = V
CC
-0.2V, Input low voltage(V
IL
) = 0.2V, CAS = 0.2V,
Din = Don't care, t
RC
= 125us(1K/L-ver)
t
RAS
= t
RAS
min~300ns
I
CCS
: Self Refresh Current
RAS=CAS0~3 =V
IL
, W = OE = A0 ~ A9 = V
CC
-0.2V or 0.2V,
DQ0 ~ DQ31 = V
CC
-0.2V, 0.2V or Open
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one Hyper page mode cycle time, t
HPC
.
K4Q153211M, K4Q153212M
CAPACITANCE
(T
A
=25
°C
, V
CC
=5V or 3.3V, f=1MHz)
Parameter
Input capacitance [A0 ~ A9]
Input capacitance [RAS, CASx, W, OE]
Output capacitance [DQ0 - DQ31]
Symbol
C
IN1
C
IN2
C
DQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS
(0
°C
≤T
A
≤70
°C
, See note 1,2)
Test condition (5V device) : V
CC
=5.0V±0.5V, Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V
Test condition (3.3V device) : V
CC
=3.3V±0.3V, Vih/Vil=2.2/0.8V, Voh/Vol=2.0/0.8V
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
OE to output in Low-Z
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Note)
*1
: 5V only
Symbol
Min
-50
*1
Max
Min
104
140
50
15
25
3
3
3
2
30
50
13
40
8
20
15
5
0
10
0
8
25
0
0
0
10
10
13
8
10K
35
25
10K
50
13
3
3
3
2
40
60
17
48
12
20
15
5
0
10
0
10
30
0
0
0
10
10
15
10
10K
43
30
10K
50
15
60
17
30
84
115
-60
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
17
8,15
8
14
16
16
14
17
23
4,16
10
15
3,4,10
3,4,5,18
3,10
3,18
6,11,18
3
2
Units
Notes
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
CEZ
t
OLZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
查看更多>
参数对比
与K4Q153212M-JL60相近的元器件有：K4Q153211M-JC50、K4Q153212M-JC60、K4Q153211M-JL60、K4Q153212M-JL50、K4Q153211M-JL50、K4Q153211M-JC60、K4Q153212M-JC50。描述及对比如下：
型号 K4Q153212M-JL60 K4Q153211M-JC50 K4Q153212M-JC60 K4Q153211M-JL60 K4Q153212M-JL50 K4Q153211M-JL50 K4Q153211M-JC60 K4Q153212M-JC50
描述 EDO DRAM, 512KX32, 60ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70 EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70 EDO DRAM, 512KX32, 60ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70 EDO DRAM, 512KX32, 60ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70 EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70 EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70 EDO DRAM, 512KX32, 60ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70 EDO DRAM, 512KX32, 50ns, CMOS, PDSO70, 0.400 X 1.125 INCH, PLASTIC, SOJ-70
厂商名称 SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)
零件包装代码 SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ
包装说明 SOJ, SOJ70,.44,32 SOJ, SOJ70,.44,32 SOJ, SOJ70,.44,32 SOJ, SOJ70,.44,32 SOJ, SOJ, SOJ70,.44,32 SOJ, SOJ70,.44,32 SOJ,
针数 70 70 70 70 70 70 70 70
Reach Compliance Code compliant compliant compliant compliant unknown compliant compliant unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
最长访问时间 60 ns 50 ns 60 ns 60 ns 50 ns 50 ns 60 ns 50 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH/SELF REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
JESD-30 代码 R-PDSO-J70 R-PDSO-J70 R-PDSO-J70 R-PDSO-J70 R-PDSO-J70 R-PDSO-J70 R-PDSO-J70 R-PDSO-J70
长度 28.575 mm 28.575 mm 28.575 mm 28.575 mm 28.575 mm 28.575 mm 28.575 mm 28.575 mm
内存密度 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit 16777216 bit
内存集成电路类型 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
内存宽度 32 32 32 32 32 32 32 32
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 70 70 70 70 70 70 70 70
字数 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
字数代码 512000 512000 512000 512000 512000 512000 512000 512000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 512KX32 512KX32 512KX32 512KX32 512KX32 512KX32 512KX32 512KX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 SOJ SOJ SOJ SOJ SOJ SOJ SOJ SOJ
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 3.61 mm 3.61 mm 3.61 mm 3.61 mm 3.61 mm 3.61 mm 3.61 mm 3.61 mm
最大供电电压 (Vsup) 3.6 V 5.5 V 3.6 V 5.5 V 3.6 V 5.5 V 5.5 V 3.6 V
最小供电电压 (Vsup) 3 V 4.5 V 3 V 4.5 V 3 V 4.5 V 4.5 V 3 V
标称供电电压 (Vsup) 3.3 V 5 V 3.3 V 5 V 3.3 V 5 V 5 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子形式 J BEND J BEND J BEND J BEND J BEND J BEND J BEND J BEND
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
是否Rohs认证 不符合 不符合 不符合 不符合 - 不符合 不符合 -
I/O 类型 COMMON COMMON COMMON COMMON - COMMON COMMON -
JESD-609代码 e0 e0 e0 e0 - e0 e0 -
输出特性 3-STATE 3-STATE 3-STATE 3-STATE - 3-STATE 3-STATE -
封装等效代码 SOJ70,.44,32 SOJ70,.44,32 SOJ70,.44,32 SOJ70,.44,32 - SOJ70,.44,32 SOJ70,.44,32 -
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
电源 3.3 V 5 V 3.3 V 5 V - 5 V 5 V -
刷新周期 1024 1024 1024 1024 - 1024 1024 -
自我刷新 YES NO NO YES YES YES NO -
最大待机电流 0.0003 A 0.001 A 0.0005 A 0.0005 A - 0.0005 A 0.001 A -
最大压摆率 0.15 mA 0.16 mA 0.15 mA 0.15 mA - 0.16 mA 0.15 mA -
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) -
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED -
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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