K4S281632B
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 0.0
Aug. 1999
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
K4S281632B
2M x 16Bit x 4 Banks Synchronous DRAM
FEATURES
•
•
•
•
JEDEC standard 3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock.
Burst read single-bit write operation
DQM for masking
Auto & self refresh
64ms refresh period (4K cycle)
CMOS SDRAM
GENERAL DESCRIPTION
The K4S281632B is 134,217,728 bits synchronous high data
rate Dynamic RAM organized as 4 x 2,097,152 words by 16
bits, fabricated with SAMSUNG′s high performance CMOS
technology. Synchronous design allows precise cycle control
with the use of system clock I/O transactions are possible on
every clock cycle. Range of operating frequencies, programma-
ble burst length and programmable latencies allow the same
device to be useful for a variety of high bandwidth, high perfor-
mance memory system applications.
•
•
•
•
•
ORDERING INFORMATION
Part No.
K4S281632B-TC/L75
K4S281632B-TC/L80
K4S281632B-TC/L1H
K4S281632B-TC/L1L
K4S281632B-TC/L10
Max Freq.
133MHz(CL=3)
125MHz(CL=3)
100MHz(CL=2)
100MHz(CL=3)
66MHz(CL=2 &3)
LVTTL
54
TSOP(II)
Interface Package
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE
LDQM
Data Input Register
Bank Select
2M x 16
Sense AMP
2M x 16
2M x 16
2M x 16
Refresh Counter
Output Buffer
Row Decoder
Row Buffer
DQi
Address Register
CLK
ADD
Column Decoder
Col. Buffer
Latency & Burst Length
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LCAS
Timing Register
Programming Register
LWCBR
LDQM
CLK
CKE
CS
RAS
CAS
WE
LDQM
UDQM
* Samsung Electronics reserves the right to change products or specification without notice.
Rev. 0.0 Aug. 1999
K4S281632B
PIN CONFIGURATION
(Top view)
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
WE
CAS
RAS
CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
N.C/RFU
UDQM
CLK
CKE
N.C
A11
A9
A8
A7
A6
A5
A4
V
SS
CMOS SDRAM
54Pin TSOP (II)
(400mil x 875mil)
(0.8 mm Pin pitch)
PIN FUNCTION DESCRIPTION
Pin
CLK
CS
Name
System clock
Chip select
Input Function
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disable input buffers for power down in standby.
Row/column addresses are multiplexed on the same pins.
Row address : RA
0
~ RA
11
, Column address : CA
0
~ CA
8
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when L(U)DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
This pin is recommended to be left No Connection on the device.
CKE
Clock enable
A
0
~ A
11
BA
0
~ BA
1
RAS
CAS
WE
L(U)DQM
DQ
0
~
15
V
DD
/V
SS
V
DDQ
/V
SSQ
N.C/RFU
Address
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
Data input/output
Power supply/ground
Data output power/ground
No connection
/reserved for future use
Rev. 0.0 Aug. 1999
K4S281632B
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
T
STG
P
D
I
OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
CMOS SDRAM
Unit
V
V
°C
W
mA
Note :
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70°C)
Parameter
Supply voltage
Input logic high voltage
Input logic low voltage
Output logic high voltage
Output logic low voltage
Input leakage current
Symbol
V
DD
, V
DDQ
V
IH
V
IL
V
OH
V
OL
I
LI
Min
3.0
2.0
-0.3
2.4
-
-10
Typ
3.3
3.0
0
-
-
-
Max
3.6
V
DD
+0.3
0.8
-
0.4
10
Unit
V
V
V
V
V
uA
1
2
I
OH
= -2mA
I
OL
= 2mA
3
Note
Notes :
1. V
IH
(max) = 5.6V AC.The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
,
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
CAPACITANCE
Clock
(V
DD
= 3.3V, T
A
= 23°C, f = 1MHz, V
REF
=1.4V
±
200 mV)
Pin
Symbol
C
CLK
C
IN
C
ADD
C
OUT
Min
2.5
2.5
2.5
4.0
Max
4.0
5.0
5.0
6.5
Unit
pF
pF
pF
pF
Note
1
2
2
3
RAS, CAS, WE, CS, CKE, DQM
Address
DQ
0
~ DQ
15
Notes :
1. -75 only specify a maximum value of 3.5pF
2. -75 only specify a maximum value of 3.8pF
3. -75 only specify a maximum value of 6.0pF
Rev. 0.0 Aug. 1999
K4S281632B
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70°C)
Parameter
Symbol
Burst length = 1
t
RC
≥
t
RC
(min)
I
O
= 0 mA
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
Test Condition
-75
Operating current
(One bank active)
Precharge standby current in
power-down mode
I
CC1
I
CC2
P
150
-80
150
CMOS SDRAM
Version
-1H
140
1
1
20
-1L
140
-10
140
Unit Note
mA
1
I
CC2
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC2
N
mA
Precharge standby current in
non power-down mode
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
I
CC2
NS
Input signals are stable
I
CC3
P
CKE
≤
V
IL
(max), t
CC
= 10ns
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
= 10ns
Input signals are changed one time during 20ns
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
I
O
= 0 mA
Page burst
4Banks Activated
t
CCD
= 2CLKs
t
RC
≥
t
RC
(min)
CKE
≤
0.2V
C
L
mA
7
5
5
30
20
mA
mA
Active standby current in
power-down mode
Active standby current in
non power-down mode
(One bank active)
I
CC3
PS CKE & CLK
≤
V
IL
(max), t
CC
=
∞
I
CC3
N
I
CC3
NS
mA
Operating current
(Burst mode)
Refresh current
Self refresh current
I
CC4
180
170
145
145
145
mA
1
I
CC5
I
CC6
220
220
210
1.5
800
210
210
mA
mA
uA
2
3
4
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281632B-TC**
4. K4S281632B-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(V
IH
/V
IL
=V
DDQ
/V
SSQ)
Rev. 0.0 Aug. 1999
嵌入式系统
