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K4S643232E-TL55

2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

器件类别：存储    存储   

厂商名称：SAMSUNG(三星)

厂商官网：http://www.samsung.com/Products/Semiconductor/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
SAMSUNG(三星)
零件包装代码
TSOP2
包装说明
TSOP2, TSSOP86,.46,20
针数
86
Reach Compliance Code
compli
ECCN代码
EAR99
访问模式
FOUR BANK PAGE BURST
最长访问时间
5 ns
其他特性
AUTO/SELF REFRESH
最大时钟频率 (fCLK)
182 MHz
I/O 类型
COMMON
交错的突发长度
1,2,4,8
JESD-30 代码
R-PDSO-G86
JESD-609代码
e0
长度
22.22 mm
内存密度
67108864 bi
内存集成电路类型
SYNCHRONOUS DRAM
内存宽度
32
功能数量
1
端口数量
1
端子数量
86
字数
2097152 words
字数代码
2000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
2MX32
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2
封装等效代码
TSSOP86,.46,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）
240
电源
3.3 V
认证状态
Not Qualified
刷新周期
4096
座面最大高度
1.2 mm
自我刷新
YES
连续突发长度
1,2,4,8,FP
最大待机电流
0.002 A
最大压摆率
0.19 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
30
宽度
10.16 mm
文档预览
K4S643232E
CMOS SDRAM
2M x 32 SDRAM
512K x 32bit x 4 Banks
Synchronous DRAM
LVTTL
Revision 1.3
October 2001
Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 (Oct. 2001)
K4S643232E
Revision History
Revision 1.3 (October 24, 2000)
• Removed CAS Latency 1 from the spec.
CMOS SDRAM
Revision 1.2 (August 7, 2000) -
Target
• Added CAS Latency 1
Revision 1.1 (March 14, 2001)
• Added K4S643232E-55
Revision 1.0 (October 20, 2000)
• Removed Note 5 in page 9. tRDL is set to 2CLK in any case regardless of using AP or frequency
Revision 0.4 (August 24, 2000)
• Updated DC spec
Revision 0.3 (August 1, 2000)
• Changed the wording of tRDL related note for User’ clear understanding
s
Revision 0.2 (July 18, 2000) -
Preliminary
• Removed K4S643232E-40/55/7C
• Changed tSH of K4S643232E-45 from 0.7ns to 1.0ns
Revision 0.0 (March 14, 2000) -
Target Spec.
• Initial draft
-2-
Rev. 1.3 (Oct. 2001)
K4S643232E
512K x 32Bit x 4 Banks Synchronous DRAM
FEATURES
•
•
•
•
3.3V power supply
LVTTL compatible with multiplexed address
Four banks operation
MRS cycle with address key programs
-. CAS latency (2 & 3)
-. Burst length (1, 2, 4, 8 & Full page)
-. Burst type (Sequential & Interleave)
All inputs are sampled at the positive going edge of the system
clock
Burst read single-bit write operation
DQM for masking
Auto & self refresh
15.6us refresh duty cycle
CMOS SDRAM
GENERAL DESCRIPTION
The K4S643232E is 67,108,864 bits synchronous high data
rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,
fabricated with SAMSUNG′s high performance CMOS technol-
ogy. Synchronous design allows precise cycle control with the
use of system clock. I/O transactions are possible on every
clock cycle. Range of operating frequencies, programmable
burst length and programmable latencies allow the same device
to be useful for a variety of high bandwidth, high performance
memory system applications.
•
•
•
•
•
ORDERING INFORMATION
Part NO.
K4S643232E-TC/L45
K4S643232E-TC/L50
K4S643232E-TC/L55
K4S643232E-TC/L60
K4S643232E-TC/L70
Max Freq.
222MHz
200MHz
183MHz
166MHz
143MHz
Interface
Package
LVTTL
86
TSOP(II)
FUNCTIONAL BLOCK DIAGRAM
I/O Control
LWE
Data Input Register
LDQM
Bank Select
512K x 32
512K x 32
512K x 32
512K x 32
Refresh Counter
Output Buffer
Row Decoder
Sense AMP
Row Buffer
DQi
Address Register
CLK
ADD
Column Decoder
Col. Buffer
Latency & Burst Length
LRAS
LCBR
LCKE
LRAS
LCBR
LWE
LCAS
Programming Register
LWCBR
LDQM
Timing Register
CLK
CKE
CS
RAS
CAS
WE
DQM
* Samsung Electronics reserves the right to
change products or specification without
notice.
-3-
Rev. 1.3 (Oct. 2001)
K4S643232E
PIN CONFIGURATION
(Top view)
CMOS SDRAM
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SSQ
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
N.C
V
DD
DQM0
WE
CAS
RAS
CS
N.C
BA0
BA1
A10/AP
A0
A1
A2
DQM2
V
DD
N.C
DQ16
V
SSQ
DQ17
DQ18
V
DDQ
DQ19
DQ20
V
SSQ
DQ21
DQ22
V
DDQ
DQ23
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
V
SS
DQ15
V
SSQ
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
N.C
V
SS
DQM1
N.C
N.C
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
V
SS
N.C
DQ31
V
DDQ
DQ30
DQ29
V
SSQ
DQ28
DQ27
V
DDQ
DQ26
DQ25
V
SSQ
DQ24
V
SS
86Pin TSOP (II)
(400mil x 875mil)
(0.5 mm Pin pitch)
-4-
Rev. 1.3 (Oct. 2001)
K4S643232E
PIN FUNCTION DESCRIPTION
Pin
CLK
CS
Name
System clock
Chip select
Input Function
Active on the positive going edge to sample all inputs.
CMOS SDRAM
Disables or enables device operation by masking or enabling all inputs except
CLK, CKE and DQM.
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
Disables input buffers for power down mode.
Row/column addresses are multiplexed on the same pins.
Row address : RA
0
~ RA
10
, Column address : CA
0
~ CA
7
Selects bank to be activated during row address latch time.
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
Enables row access & precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
Enables column access.
Enables write operation and row precharge.
Latches data in starting from CAS, WE active.
Makes data output Hi-Z, t
SHZ
after the clock and masks the output.
Blocks data input when DQM active.
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide improved noise
immunity.
This pin is recommended to be left No connection on the device.
CKE
Clock enable
A
0
~ A
10
BA0,1
RAS
CAS
WE
DQM0 ~ 3
DQ
0
~
31
Address
Bank select address
Row address strobe
Column address strobe
Write enable
Data input/output mask
Data input/output
Power supply/ground
Data output power/ground
No Connection
V
DD
/V
SS
V
DDQ
/V
SSQ
NC
-5-
Rev. 1.3 (Oct. 2001)
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参数对比
与K4S643232E-TL55相近的元器件有：K4S643232E-TL60、K4S643232E-TL50、K4S643232E-TL70、K4S643232E-TL45、K4S643232E-TC70、K4S643232E-TC55、K4S643232E-TC60、K4S643232E-TC50、K4S643232E-TC45。描述及对比如下：
型号 K4S643232E-TL55 K4S643232E-TL60 K4S643232E-TL50 K4S643232E-TL70 K4S643232E-TL45 K4S643232E-TC70 K4S643232E-TC55 K4S643232E-TC60 K4S643232E-TC50 K4S643232E-TC45
描述 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)
零件包装代码 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
包装说明 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20 TSOP2, TSSOP86,.46,20
针数 86 86 86 86 86 86 86 86 86 86
Reach Compliance Code compli compli compli compli compli compli compli compli compli compli
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
最长访问时间 5 ns 5.5 ns 4.5 ns 5.5 ns 4 ns 5.5 ns 5 ns 5.5 ns 4.5 ns 4 ns
其他特性 AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
最大时钟频率 (fCLK) 182 MHz 166 MHz 200 MHz 143 MHz 222 MHz 143 MHz 182 MHz 166 MHz 200 MHz 222 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
交错的突发长度 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8 1,2,4,8
JESD-30 代码 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86 R-PDSO-G86
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
长度 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm 22.22 mm
内存密度 67108864 bi 67108864 bi 67108864 bi 67108864 bi 67108864 bi 67108864 bi 67108864 bi 67108864 bi 67108864 bi 67108864 bi
内存集成电路类型 SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM SYNCHRONOUS DRAM
内存宽度 32 32 32 32 32 32 32 32 32 32
功能数量 1 1 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1 1 1
端子数量 86 86 86 86 86 86 86 86 86 86
字数 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words 2097152 words
字数代码 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000 2000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32 2MX32
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2 TSOP2
封装等效代码 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20 TSSOP86,.46,20
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度） 240 240 240 240 240 240 240 NOT SPECIFIED 240 240
电源 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 4096 4096 4096 4096 4096 4096 4096 4096 4096 4096
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
自我刷新 YES YES YES YES YES YES YES YES YES YES
连续突发长度 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP 1,2,4,8,FP
最大待机电流 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A 0.002 A
最大压摆率 0.19 mA 0.185 mA 0.19 mA 0.17 mA 0.2 mA 0.17 mA 0.19 mA 0.185 mA 0.19 mA 0.2 mA
最大供电电压 (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 30 30 30 30 30 30 30 NOT SPECIFIED 30 30
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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