DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84
厂商名称:SAMSUNG(三星)
厂商官网:http://www.samsung.com/Products/Semiconductor/
器件标准:
下载文档型号 | K4T51163QC-ZLD60 | K4T51163QC-ZCD60 | K4T51043QC-ZCD60 | K4T51083QC-ZCD60 | K4T51043QC-ZLD60 | K4T51083QC-ZLD60 |
---|---|---|---|---|---|---|
描述 | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84, ROHS COMPLIANT, FBGA-84 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, ROHS COMPLIANT, FBGA-60 |
是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, |
针数 | 84 | 84 | 60 | 60 | 60 | 60 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
访问模式 | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST | FOUR BANK PAGE BURST |
最长访问时间 | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns | 0.45 ns |
其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
JESD-30 代码 | R-PBGA-B84 | R-PBGA-B84 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 |
JESD-609代码 | e1 | e1 | e1 | e1 | e1 | e1 |
长度 | 13 mm | 13 mm | 11 mm | 11 mm | 11 mm | 11 mm |
内存密度 | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit | 536870912 bit |
内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
内存宽度 | 16 | 16 | 4 | 8 | 4 | 8 |
湿度敏感等级 | 2 | 2 | 2 | 3 | 2 | 3 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 84 | 84 | 60 | 60 | 60 | 60 |
字数 | 33554432 words | 33554432 words | 134217728 words | 67108864 words | 134217728 words | 67108864 words |
字数代码 | 32000000 | 32000000 | 128000000 | 64000000 | 128000000 | 64000000 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
组织 | 32MX16 | 32MX16 | 128MX4 | 64MX8 | 128MX4 | 64MX8 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
峰值回流温度(摄氏度) | 260 | 260 | 260 | 260 | 260 | 260 |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
自我刷新 | YES | YES | YES | YES | YES | YES |
最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
表面贴装 | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | OTHER | OTHER | OTHER | OTHER | OTHER | OTHER |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
处于峰值回流温度下的最长时间 | 40 | 40 | 40 | NOT SPECIFIED | 40 | NOT SPECIFIED |
宽度 | 11 mm | 11 mm | 10 mm | 10 mm | 10 mm | 10 mm |
Base Number Matches | 1 | 1 | 1 | 1 | - | - |
厂商名称 | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |