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K6T4008S1C Family

Document Title

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

CMOS SRAM

Revision History

Revision No. History

0.0

1.0

Initial Draft

Finalize

Draft Data

June 15, 1998

April 17, 1999

Remark

Preliminary

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

April 1999

K6T4008S1C Family

512Kx8 bit Low Power and Low Voltage CMOS Static RAM

FEATURES

•

Process Technology: TFT

•

Organization: 512K×8

•

Power Supply Voltage

K6T4008S1C Family: 2.3~2.7V

•

Low Data Retention Voltage: 2V(Min)

•

Three state output and TTL Compatible

•

Package Type: 32-TSOP2-400F/R

32-TSOP1-0820F, 32-TSOP1-0813.4F

CMOS SRAM

GENERAL DESCRIPTION

The K6T4008S1C families are fabricated by SAMSUNG′s

advanced CMOS process technology. The families support

industrial operating temperature range and have various

package type for user flexibility of system design. The fami-

lies also support low data retention voltage for battery back-

up operation with low data retention current.

PRODUCT FAMILY

Power Dissipation

Product Family

Operating Temperature

Vcc Range

Speed

Standby

SB1

, Max)

15µA

Operating

CC2

, Max)

16mA

PKG Type

32-TSOP2-F/R

32-TSOP1-F

32-sTSOP1-F

K6T4008S1C-F

Industrial(-40~85°C)

2.3~2.7V

100*/120ns

1. The paramerter is measured with 30pF test load.

PIN DESCRIPTION

A18

A16

A14

A12

I/O1

I/O2

I/O3

VSS

VCC

A15

A17

A13

A11

A10

I/O8

I/O7

I/O6

I/O5

I/O4

VCC

A15

A17

A13

A11

A10

I/O8

I/O7

I/O6

I/O5

I/O4

A18

A16

A14

A12

I/O1

I/O2

I/O3

VSS

FUNCTIONAL BLOCK DIAGRAM

Clk gen.

Precharge circuit.

A12

A14

A16

A18

32-TSOP2

(Forward)

32-TSOP2

(Reverse)

Row

select

Memory array

1024 rows

512×8 columns

A11

A13

A17

A15

VCC

A18

A16

A14

A12

32-TSOP1

32-

TSOP1

(Forward)

A10

I/O8

I/O7

I/O6

I/O5

I/O4

VSS

I/O3

I/O2

I/O1

I/O

Data

cont

I/O Circuit

Column select

Data

cont

A2 A3 A8 A9 A10 A11 A13 A15 A17

Name

Function

Name

Vcc

Vss

Function

Power

Ground

Address Inputs

Write Enable Input

Chip Select Input

Output Enable Input

Control

logic

I/O

~I/O

Data Inputs/Outputs

SAMSUNG ELECTRONICS CO., LTD.

reserves the right to change products and specifications without notice.

Revision 1.0

April 1999

K6T4008S1C Family

PRODUCT LIST

Industrial Temp Products(-40~85°C)

Part Name

K6T4008S1C-VF10

K6T4008S1C-VF12

K6T4008S1C-MF10

K6T4008S1C-MF12

K6T4008S1C-TF10

K6T4008S1C-TF12

K6T4008S1C-YF10

K6T4008S1C-YF12

Function

CMOS SRAM

32-TSOP2-F, 100ns, 2.5V, LL

32-TSOP2-F, 120ns, 2.5V, LL

32-TSOP2-R, 100ns, 2.5V, LL

32-TSOP2-R, 120ns, 2.5V, LL

32-TSOP1-F, 100ns, 2.5V, LL

32-TSOP1-F, 120ns, 2.5V, LL

32-sTSOP1-F, 100ns, 2.5V, LL

32-sTSOP1-F, 120ns, 2.5V, LL

FUNCTIONAL DESCRIPTION

I/O

High-Z

Dout

Din

Mode

Deselected

Output Disabled

Read

Write

Power

Standby

Active

1. X means don′t care (Must be in low or high state)

ABSOLUTE MAXIMUM RATINGS

Item

Voltage on any pin relative to Vss

Voltage on Vcc supply relative to Vss

Power Dissipation

Storage temperature

Operating Temperature

Symbol

OUT

STG

Ratings

-0.5 to V

+0.5

-0.3 to 4.6

1.0

-65 to 150

-40 to 85

Unit

°C

Remark

Industrial Product

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be

restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Revision 1.0

April 1999

K6T4008S1C Family

RECOMMENDED DC OPERATING CONDITIONS

Item

Supply voltage

Ground

Input high voltage

Input low voltage

Symbol

Vcc

Vss

Product

K6T4008S1C Family

All Family

Min

2.3

2.0

-0.3

Typ

2.5

CMOS SRAM

Max

2.7

Vcc+0.3

0.6

Unit

Note:

1. T

=-40 to 85°C, otherwise specified

2. Overshoot : V

+1.0V in case of pulse width

≤

20ns

3. Undershoot : -1.0V in case of pulse width

≤

20ns

4. Overshoot and undershoot are sampled, not 100% tested.

CAPACITANCE

(f=1MHz, T

=25°C)

Item

Input capacitance

Input/Output capacitance

1. Capacitance is sampled, not 100% tested

Symbol

Test Condition

=0V

Min

Max

Unit

DC AND OPERATING CHARACTERISTICS

Item

Input leakage current

Output leakage current

Operating power supply current

Average operating current

Output low voltage

Output high voltage

Standby Current(TTL)

Standby Current (CMOS)

Symbol

CC1

CC2

SB1

=Vss to Vcc

CS=V

or OE=V

or WE=V

=Vss to Vcc

=0mA, CS=V

, V

or V

, read

Cycle time=1µs, 100% duty, I

=0mA CS≤0.2V,V

≤0.2V

or V

≥Vcc-0.2V

Test Conditions

Min

-1

2.0

Typ

Max

0.4

0.3

Unit

µA

Cycle time=Min, 100% duty, I

=0mA, CS=V

, V

or V

=0.5mA

=-0.5mA

CS=V

, Other inputs = V

or V

CS≥Vcc-0.2V, Other inputs=0~Vcc

Revision 1.0

April 1999

K6T4008S1C Family

AC OPERATING CONDITIONS

TEST CONDITIONS

(Test Load and Input/Output Reference)

Input pulse level : 0.4 to 2.2V

Input rising and falling time : 5ns

Input and output reference voltage : 1.1V

Output load(see right) : C

=100pF+1TTL

=30pF

+1TTL

1. K6T4008S1C-10 Family

CMOS SRAM

1. Including scope and jig capacitance

AC CHARACTERISTICS

=2.3~2.7V, T

=-40 to 85°C)

Speed Bins

Parameter List

Symbol

100ns

Min

Read cycle time

Address access time

Chip select to output

Output enable to valid output

Read

Chip select to low-Z output

Output enable to low-Z output

Chip disable to high-Z output

Output disable to high-Z output

Output hold from address change

Write cycle time

Chip select to end of write

Address set-up time

Address valid to end of write

Write

Write pulse width

Write recovery time

Write to output high-Z

Data to write time overlap

Data hold from write time

End write to output low-Z

OLZ

OHZ

WHZ

100

Max

100

Min

120

100

120ns

Max

120

Units

DATA RETENTION CHARACTERISTICS

Item

Vcc for data retention

Data retention current

Data retention set-up time

Recovery time

Symbol

SDR

RDR

Test Condition

CS≥Vcc-0.2V

Vcc=2.5V, CS≥Vcc-0.2V

See data retention waveform

Min

2.0

Typ

0.5

Max

3.6

Unit

µA

Revision 1.0

April 1999

参数对比

与K6T4008S1C-VF10相近的元器件有：K6T4008S1C-YF10、K6T4008S1C-VF12、K6T4008S1C-TF10、K6T4008S1C-TF12、K6T4008S1C-YF12、K6T4008S1C-MF12、K6T4008S1C-MF10。描述及对比如下：

型号	K6T4008S1C-VF10	K6T4008S1C-YF10	K6T4008S1C-VF12	K6T4008S1C-TF10	K6T4008S1C-TF12	K6T4008S1C-YF12	K6T4008S1C-MF12	K6T4008S1C-MF10
描述	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32	Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32	Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32	Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32	Standard SRAM, 512KX8, 120ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32	Standard SRAM, 512KX8, 100ns, CMOS, PDSO32, 0.400 INCH, REVERSE, TSOP2-32
厂商名称	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)	SAMSUNG(三星)
零件包装代码	TSOP2	TSOP1	TSOP2	TSOP1	TSOP1	TSOP1	TSOP2	TSOP2
包装说明	TSOP2,	TSOP1,	TSOP2,	TSOP1,	TSOP1,	TSOP1,	TSOP2-R,	TSOP2-R,
针数	32	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknow
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	100 ns	100 ns	120 ns	100 ns	120 ns	120 ns	120 ns	100 ns
JESD-30 代码	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
长度	20.95 mm	11.8 mm	20.95 mm	18.4 mm	18.4 mm	11.8 mm	20.95 mm	20.95 mm
内存密度	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bi
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP1	TSOP2	TSOP1	TSOP1	TSOP1	TSOP2-R	TSOP2-R
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大供电电压 (Vsup)	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V
最小供电电压 (Vsup)	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V	2.3 V
标称供电电压 (Vsup)	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	1.27 mm	0.5 mm	1.27 mm	0.5 mm	0.5 mm	0.5 mm	1.27 mm	1.27 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.16 mm	8 mm	10.16 mm	8 mm	8 mm	8 mm	10.16 mm	10.16 mm