K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No
0.0
0.1
History
Initial draft
Revise
- Speed bin change
Commercial: 70/85ns to 70/85/100ns
Industrial: 85/100ns to 70/85/100ns
- DC Characteristics change
I
CC
: 5mA at read/write to 4mA at read
I
CC1
: 5mA to 6mA
I
CC2
: 50mA to 45mA
I
SB
: 0.5mA to 0.3mA
I
SB1
: 10µA to 15µA for commercial parts
Errata correction
Finalize
Revise
- Add K6T4016V3C-TB55 product
Revise
- Improved V
OH
(output high voltage) from 2.2V to 2.4V.
Draft Date
January 13, 1998
June 12, 1998
Remark
Advance
Preliminary
0.11
1.0
2.0
August 13, 1998
November 16, 1998
June 26, 2001
Final
Final
2.01
October 15, 2001
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1
Revision 2.01
October 2001
K6T4016V3C, K6T4016U3C Family
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
FEATURES
•
Process Technology: TFT
•
Organization: 256K x16
•
Power Supply Voltage
K6T4016V3C Family: 3.0~3.6V
K6T4016U3C Family: 2.7~3.3V
•
Low Data Retention Voltage: 2V(Min)
•
Three State Outputs
•
Package Type: 44-TSOP2-400F/R
CMOS SRAM
GENERAL DESCRIPTION
The K6T4016V3C and K6T4016U3C families are fabricated by
SAMSUNG′s advanced CMOS process technology. The fami-
lies support various operating temperature ranges and have
various package types for user flexibility of system design. The
families also support low data retention voltage for battery
back-up operation with low data retention current.
PRODUCT FAMILY
Power Dissipation
Product Family
K6T4016V3C-B
K6T4016U3C-B
K6T4016V3C-F
K6T4016U3C-F
1. The parameter is measured with 30pF test load.
Operating Temperature
Vcc Range
3.0~3.6V
2.7~3.3V
Speed(ns)
Standby
(I
SB1
, Max)
15µA
Operating
(I
CC2
, Max)
PKG Type
Commercial(0~70°C)
55
1)
/70
1)
/85/100
70
1)
/85/100
45mA
20µA
44-TSOP2-400F/R
Industrial(-40~85°C)
3.0~3.6V
2.7~3.3V
PIN DESCRIPTION
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
A12
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
I/O13
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
NC
A8
A9
A10
A11
A12
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
A4
A3
A2
A1
A0
CS
I/OI
I/O2
I/O3
I/O4
Vcc
Vss
I/O5
I/O6
I/O7
I/O8
WE
A17
A16
A15
A14
A13
FUNCTIONAL BLOCK DIAGRAM
Clk gen.
A0
A1
A2
A3
A4
A13
A14
A15
A16
A17
Precharge circuit.
Vcc
Vss
44-TSOP2
Forward
44-TSOP2
Reverse
Row
select
Memory array
1024 rows
256×16 columns
I/O
1
~I/O
8
Data
cont
Data
cont
Data
cont
I/O Circuit
Column select
I/O
9
~I/O
16
Name
CS
OE
WE
A
0
~A
17
Function
Chip Select Input
Output Enable Input
Write Enable Input
Address Inputs
Name Function
Vcc
Vss
LB
UB
NC
Power
Ground
Lower Byte (I/O
1~8
)
WE
A5 A6 A7 A8 A9 A10 A11 A12
Upper Byte (I/O
9~16
)
No Connection
OE
UB
LB
CS
I/O
1
~I/O
16
Data Input/Output
Control
logic
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 2.01
October 2001
K6T4016V3C, K6T4016U3C Family
PRODUCT LIST
Commercial Temperature Product(0~70°C)
Part Name
K6T4016V3C-TB55
K6T4016V3C-TB70
K6T4016V3C-TB85
K6T4016V3C-TB10
K6T4016V3C-RB70
K6T4016V3C-RB85
K6T4016V3C-RB10
K6T4016U3C-TB70
K6T4016U3C-TB85
K6T4016U3C-TB10
K6T4016U3C-RB70
K6T4016U3C-RB85
K6T4016U3C-RB10
Function
44-TSOP2-F, 55ns, 3.3V, LL
44-TSOP2-F, 70ns, 3.3V, LL
44-TSOP2-F, 85ns, 3.3V, LL
44-TSOP2-F, 100ns, 3.3V, LL
44-TSOP2-R, 70ns, 3.3V, LL
44-TSOP2-R, 85ns, 3.3V, LL
44-TSOP2-R, 100ns, 3.3V, LL
44-TSOP2-F, 70ns, 3.0V, LL
44-TSOP2-F, 85ns, 3.0V, LL
44-TSOP2-F, 100ns, 3.0V, LL
44-TSOP2-R, 70ns, 3.0V, LL
44-TSOP2-R, 85ns, 3.0V, LL
44-TSOP2-R, 100ns, 3.0V, LL
CMOS SRAM
Industrial Temperature Products(-40~85°C)
Part Name
Function
44-TSOP2-F, 70ns, 3.3V, LL
44-TSOP2-F, 85ns, 3.3V, LL
44-TSOP2-F, 100ns, 3.3V, LL
44-TSOP2-R, 70ns, 3.3V, LL
44-TSOP2-R, 85ns, 3.3V, LL
44-TSOP2-R, 100ns, 3.3V, LL
44-TSOP2-F, 70ns, 3.0V, LL
44-TSOP2-F, 85ns, 3.0V, LL
44-TSOP2-F, 100ns, 3.0V, LL
44-TSOP2-R, 70ns, 3.0V, LL
44-TSOP2-R, 85ns, 3.0V, LL
44-TSOP2-R, 100ns, 3.0V, LL
K6T4016V3C-TF70
K6T4016V3C-TF85
K6T4016V3C-TF10
K6T4016V3C-RF70
K6T4016V3C-RF85
K6T4016V3C-RF10
K6T4016U3C-TF70
K6T4016U3C-TF85
K6T4016U3C-TF10
K6T4016U3C-RF70
K6T4016U3C-RF85
K6T4016U3C-RF10
FUNCTIONAL DESCRIPTION
CS
H
L
L
L
L
L
L
L
L
OE
X
1)
H
X
1)
L
L
L
X
1)
X
1)
X
1)
WE
X
1)
H
X
1)
H
H
H
L
L
L
LB
X
1)
X
1)
H
L
H
L
L
H
L
UB
X
1)
X
1)
H
H
L
L
H
L
L
I/O
1~8
High-Z
High-Z
High-Z
Dout
High-Z
Dout
Din
High-Z
Din
I/O
9~16
High-Z
High-Z
High-Z
High-Z
Dout
Dout
High-Z
Din
Din
Mode
Deselected
Output Disabled
Output Disabled
Lower Byte Read
Upper Byte Read
Word Read
Lower Byte Write
Upper Byte Write
Word Write
Power
Standby
Active
Active
Active
Active
Active
Active
Active
Active
1. X means don′t care. (Must be in low or high state)
ABSOLUTE MAXIMUM RATINGS
1)
Item
Voltage on any pin relative to Vss
Voltage on Vcc supply relative to Vss
Power Dissipation
Storage temperature
Operating Temperature
Symbol
V
IN
,V
OUT
V
CC
P
D
T
STG
T
A
Ratings
-0.5 to V
CC
+0.5
-0.3 to 4.6
1.0
-65 to 150
0 to 70
-40 to 85
Unit
V
V
W
°C
°C
°C
Remark
-
-
-
-
K6T4016V3C-B, K6T4016U3C-B
K6T4016V3C-F, K6T4016U3C-F
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be
restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
3
Revision 2.01
October 2001
K6T4016V3C, K6T4016U3C Family
RECOMMENDED DC OPERATING CONDITIONS
1)
Item
Supply voltage
Ground
Input high voltage
Input low voltage
Symbol
Vcc
Vss
V
IH
V
IL
Product
K6T4016V3C Family
K6T4016U3C Family
All Family
K6T4016V3C, K6T4016U3C Family
K6T4016V3C, K6T4016U3C Family
Min
3.0
2.7
0
2.2
-0.3
3)
Typ
3.3
3.0
0
-
-
CMOS SRAM
Max
3.6
3.3
0
Vcc+0.3
2)
0.6
Unit
V
V
V
V
Note:
1. Commercial Product: T
A
=0 to 70°C, otherwise specified
Industrial Product: T
A
=-40 to 85°C, otherwise specified
2. Overshoot: V
CC
+2.0V in case of pulse width
≤
30ns
3. Undershoot: -2.0V in case of pulse width
≤
30ns
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1)
(f=1MHz, T
A
=25°C)
Item
Input capacitance
Input/Output capacitance
1. Capacitance is sampled, not 100% tested
Symbol
C
IN
C
IO
Test Condition
V
IN
=0V
V
IO
=0V
Min
-
-
Max
8
10
Unit
pF
pF
DC AND OPERATING CHARACTERISTICS
Item
Input leakage current
Output leakage current
Operating power supply current
Symbol
I
LI
I
LO
I
CC
I
CC1
Average operating current
I
CC2
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
1. Industrial product = 20
µA
2. Cycle time = 70ns
Test Conditions
V
IL
=Vss to Vcc
CS=V
IH
or OE=V
IH
or WE=V
IL
V
IO
=Vss to Vcc
I
IO
=0mA, CS=V
IL
, V
IN
=V
IL
or V
IH
, Read
Cycle time=1µs, 100% duty, I
IO
=0mA CS≤0.2V,
V
IN
≤0.2V
or V
IN
≥Vcc-0.2V
Cycle time=Min
2)
, 100% duty, I
IO
=0mA, CS=V
IL,
V
IN
=V
IH
or V
IL
I
OL
=2.1mA
I
OH
=-1.0mA
CS=V
IH
, Other inputs=V
IL
or V
IH
CS≥Vcc-0.2V, Other inputs=0~Vcc
Min
-1
-1
-
-
-
-
2.4
-
-
Typ
-
-
-
-
-
-
-
-
-
Max
1
1
4
6
45
0.4
-
0.3
15
1)
Unit
µA
µA
mA
mA
mA
V
V
mA
µA
V
OL
V
OH
I
SB
I
SB1
4
Revision 2.01
October 2001
K6T4016V3C, K6T4016U3C Family
AC OPERATING CONDITIONS
TEST CONDITIONS
( Test Load and Input/Output Reference)
Input pulse level: 0.4 to 2.2V
Input rising and falling time: 5ns
Input and output reference voltage: 1.5V
Output load(see right): C
L
=100pF+1TTL
C
L
=30pF+1TTL
CMOS SRAM
C
L
1
)
1.Including scope and jig capacitance
AC CHARACTERISTICS
(K6T4016V3C Family: Vcc=3.0~3.6V, K6T4016U3C Family: Vcc=2.7~3.3V
Commercial product: T
A
=0 to 70°C, Industrial product: T
A
=-40 to 85°C)
Speed Bins
Parameter List
Symbol
55ns
Min
Read cycle time
Address access time
Chip select to output
Output enable to valid output
LB, UB valid to data output
Read
Chip select to low-Z output
Output enable to low-Z output
LB, UB enable to low-Z output
Output hold from address change
Chip disable to high-Z output
OE disable to high-Z output
LB, UB disable to high-Z output
Write cycle time
Chip select to end of write
Address set-up time
Address valid to end of write
Write pulse width
Write
Write recovery time
Write to output high-Z
Data to write time overlap
Data hold from write time
End write to output low-Z
LB, UB valid to end of write
t
RC
t
AA
t
CO
t
OE
t
BA
t
LZ
t
OLZ
t
BLZ
t
OH
t
HZ
t
OHZ
t
BHZ
t
WC
t
CW
t
AS
t
AW
t
WP
t
WR
t
WHZ
t
DW
t
DH
t
OW
t
BW
55
-
-
-
-
10
5
5
10
0
0
0
55
45
0
45
40
0
0
25
0
5
45
Max
-
55
55
25
25
-
-
-
-
20
20
20
-
-
-
-
-
-
20
-
-
-
-
70ns
Min
70
-
-
-
-
10
5
5
10
0
0
0
70
60
0
60
55
0
0
30
0
5
60
Max
-
70
70
35
35
-
-
-
-
25
25
25
-
-
-
-
-
-
25
-
-
-
-
85ns
Min
85
-
-
-
-
10
5
5
10
0
0
0
85
70
0
70
60
0
0
35
0
5
70
Max
-
85
85
40
40
-
-
-
-
25
25
25
-
-
-
-
-
-
25
-
-
-
-
100ns
Min
100
-
-
-
-
10
5
5
15
0
0
0
100
80
0
80
70
0
0
40
0
5
80
Max
-
100
100
50
50
-
-
-
-
30
30
30
-
-
-
-
-
-
30
-
-
-
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Units
DATA RETENTION CHARACTERISTICS
Item
Vcc for data retention
Data retention current
Data retention set-up time
Recovery time
1. Industrial product = 20
µA
Symbol
V
DR
I
DR
t
SDR
t
RDR
Test Condition
CS≥Vcc-0.2V
Vcc=3.0V, CS≥Vcc-0.2V
See data retention waveform
Min
2.0
-
0
5
Typ
-
0.5
-
-
Max
3.6
15
1)
-
-
Unit
V
µA
ms
5
Revision 2.01
October 2001
嵌入式系统
