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K7A161800M-QL15

Standard SRAM, 1MX18, 3.8ns, CMOS, PQFP100

器件类别:存储    存储   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
Objectid
1235460380
包装说明
QFP, QFP100,.63X.87
Reach Compliance Code
unknown
ECCN代码
3A991.B.2.A
最长访问时间
3.8 ns
最大时钟频率 (fCLK)
150 MHz
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
JESD-609代码
e1
内存密度
18874368 bit
内存集成电路类型
STANDARD SRAM
内存宽度
18
湿度敏感等级
3
端子数量
100
字数
1048576 words
字数代码
1000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
1MX18
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
QFP
封装等效代码
QFP100,.63X.87
封装形状
RECTANGULAR
封装形式
FLATPACK
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
电源
2.5/3.3,3.3 V
认证状态
Not Qualified
最大待机电流
0.03 A
最小待机电流
3.14 V
最大压摆率
0.4 mA
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
TIN SILVER COPPER
端子形式
GULL WING
端子节距
0.635 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
40
文档预览
K7A163600M
K7A161800M
Document Title
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
History
Initial draft
1. Update ICC & ISB values.
1. Change I
SB
value from 150mA to 110mA at -67.
2. Change I
SB
value from 130mA to 90mA at -72 .
3. Change I
SB
value from 120mA to 80mA at -10 .
1. Add tCYC 167MHz and 183MHz.
2. Changed DC condition at Icc and parameters
Icc ; from 420mA to 400mA at -67,
from 400mA to 380mA at -72,
from 350mA to 320mA at -10,
1. Final Spec Release.
1. Remove tCYC 183MHz & 100MHz .
Draft Date
Dec. 29. 1998
May. 27. 1999
Sep. 04. 1999
Remark
Preliminary
Preliminary
Preliminary
0.3
Nov. 19. 1999
Preliminary
1.0
2.0
Dec. 08. 1999
Feb. 23. 2001
Final
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
February 2001
Rev 2.0
K7A163600M
K7A161800M
512Kx36 & 1Mx18 Synchronous SRAM
512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
FEATURES
Synchronous Operation.
2 Stage Pipelined operation with 4 Burst.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
V
DD
= 3.3V +0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V +0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O.
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear
burst.
• Three Chip Enables for simple depth expansion with No Data Con-
tention only for TQFP ; 2cycle Enable, 1cycle Disable.
• Asynchronous Output Enable Control.
• ADSP, ADSC , ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A / 119BGA(7x17 Ball Grid Array Package)
GENERAL DESCRIPTION
The K7A163600M and K7A161800M are 18,874,368-bit
Synchronous Static Random Access Memory designed for
high performance second level cache of Pentium and
Power PC based System.
It is organized as 512K(1M) words of 36(18) bits and inte-
grates address and control registers, a 2-bit burst address
counter and added some new functions for high perfor-
mance cache RAM applications; GW, BW, LBO, ZZ. Write
cycles are internally self-timed and synchronous.
Full bus-width write is done by GW, and each byte write is
performed by the combination of WEx and BW when GW is
high. And with CS
1
high, ADSP is blocked to control sig-
nals.
Burst cycle can be initiated with either the address status
processor(ADSP) or address status cache control-
ler(ADSC) inputs. Subsequent burst addresses are gener-
ated internally in the system′s burst sequence and are
controlled by the burst address advance(ADV) input.
LBO pin is DC operated and determines burst
sequence(linear or interleaved).
ZZ pin controls Power Down State and reduces Stand-by
current regardless of CLK.
The K7A163600M and K7A161800M are fabricated using
SAMSUNG′s high performance CMOS technology and is
available in a 100pin TQFP and 119BGA package. Multiple
power and ground pins are utilized to minimize ground
bounce.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol
t
CYC
t
CD
t
OE
-16
6.0
3.5
3.5
-15
6.7
3.8
3.8
-14
7.2
4.0
4.0
Unit
ns
ns
ns
LOGIC BLOCK DIAGRAM
CLK
LBO
CONTROL
REGISTER
ADV
ADSC
BURST CONTROL
LOGIC
BURST
ADDRESS
COUNTER
A′
0
~A′
1
512Kx36 , 1Mx18
MEMORY
ARRAY
A
0
~A
1
A
0
~A
18
or A
0
~A
19
ADDRESS
REGISTER
A
2
~A
18
or A
2
~A
19
ADSP
CS
1
CS
2
CS
2
GW
BW
WEx
(x=a,b,c,d or a,b)
OE
ZZ
DATA-IN
REGISTER
DQa
0
~ DQd
7
or DQa0 ~ DQb7
DQPa,DQPb
DQPa ~ DQPd
CONTROL
REGISTER
CONTROL
LOGIC
OUTPUT
REGISTER
BUFFER
-2-
February 2001
Rev 2.0
K7A163600M
K7A161800M
PIN CONFIGURATION
(TOP VIEW)
512Kx36 & 1Mx18 Synchronous SRAM
ADSC
ADSP
WEd
WEb
WEa
WEc
ADV
83
CLK
CS
1
CS
2
CS
2
V
DD
V
SS
GW
BW
OE
A
6
A
7
A
8
82
10 0
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
V
SS
L BO
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
18
A
17
A
10
A
11
A
12
A
13
A
14
A
15
PIN NAME
SYMBOL
A
0
- A
18
PIN NAME
Address Inputs
TQFP PIN NO.
SYMBOL
V
DD
V
SS
N.C.
DQa
0
~a
7
DQb
0
~b
7
DQc
0
~c
7
DQd
0
~d
7
DQPa~P
d
V
DDQ
V
SSQ
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
TQFP PIN NO.
15,41,65,91
17,40,67,90
14,16,38,39,66
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
32,33,34,35,36,37,42
43,44,45,46,47,48,49
50,81,82,99,100
ADV
Burst Address Advance
83
ADSP
Address Status Processor 84
ADSC
Address Status Controller 85
CLK
Clock
89
CS
1
Chip Select
98
CS
2
Chip Select
97
CS
2
Chip Select
92
WEx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
OE
Output Enable
86
GW
Global Write Enable
88
BW
Byte Write Enable
87
ZZ
Power Down Input
64
LBO
Burst Mode Control
31
Output Power Supply
(3.3V or 2.5V)
Output Ground
Note :
1. A0 and A1 are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-3-
A
16
50
DQPc
DQc
0
DQc
1
V
DDQ
V
SSQ
DQc
2
DQc
3
DQc
4
DQc
5
V
SSQ
V
DDQ
DQc
6
DQc
7
N.C.
V
DD
N.C.
V
SS
DQd
0
DQd
1
V
DDQ
V
SSQ
DQd
2
DQd
3
DQd
4
DQd
5
V
SSQ
V
DDQ
DQd
6
DQd
7
DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7A163600M(512Kx36)
DQPb
DQb
7
DQb
6
V
DDQ
V
SSQ
DQb
5
DQb
4
DQb
3
DQb
2
V
SSQ
V
DDQ
DQb
1
DQb
0
V
SS
N.C.
V
DD
ZZ
DQa
7
DQa
6
V
DDQ
V
SSQ
DQa
5
DQa
4
DQa
3
DQa
2
V
SSQ
V
DDQ
DQa
1
DQa
0
DQPa
February 2001
Rev 2.0
K7A163600M
K7A161800M
PIN CONFIGURATION
(TOP VIEW)
512Kx36 & 1Mx18 Synchronous SRAM
ADSC
ADSP
WEb
WEa
ADV
83
N.C.
N.C.
CLK
CS
1
CS
2
CS
2
V
DD
V
SS
GW
BW
OE
A
6
A
7
A
8
82
10 0
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
V
SS
L BO
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
19
A
18
A
11
A
12
A
13
A
14
A
15
A
16
PIN NAME
SYMBOL
A
0
- A
19
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,42
43,44,45,46,47,48,49
50 80,81,82,99,100
83
84
85
89
98
97
92
93,94
86
88
87
64
31
SYMBOL
V
DD
V
SS
N.C.
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
TQFP PIN NO.
15,41,65,91
17,40,67,90
1,2,3,6,7,14,16,25,28,29
30,38,39,51,52,53,56,57
66,75,78,79,95,96
58,59,62,63,68,69,72,73
8,9,12,13,18,19,22,23
74,24
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
ADV
ADSP
ADSC
CLK
CS
1
CS
2
CS
2
WEx(x=a,b)
OE
GW
BW
ZZ
LBO
Burst Address Advance
Address Status Processor
Address Status Controller
Clock
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
DQa
0
~ a
7
DQb
0
~ b
7
DQPa, Pb
V
DDQ
V
SSQ
Data Inputs/Outputs
Output Power Supply
(3.3V or 2.5V)
Output Ground
Note :
1. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-4-
A
17
50
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
0
DQb
1
V
SSQ
V
DDQ
DQb
2
DQb
3
N.C.
V
DD
N.C.
V
SS
DQb
4
DQb
5
V
DDQ
V
SSQ
DQb
6
DQb
7
DQPb
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7A161800M(1Mx18)
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQPa
DQa
7
DQa
6
V
SSQ
V
DDQ
DQa
5
DQa
4
V
SS
N.C.
V
DD
ZZ
DQa
3
DQa
2
V
DDQ
V
SSQ
DQa
1
DQa
0
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
February 2001
Rev 2.0
K7A163600M
K7A161800M
512Kx36 & 1Mx18 Synchronous SRAM
119BGA PACKAGE PIN CONFIGURATIONS
(TOP VIEW)
K7A163600M(512Kx36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
2
A
A
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
NC
3
A
A
A
V
SS
V
SS
V
SS
WE c
V
SS
NC
V
SS
WEd
V
SS
V
SS
V
SS
LBO
A
NC
4
ADSP
ADSC
V
DD
NC
CS
1
OE
ADV
GW
V
DD
CLK
NC
BW
A
1
*
A
0
*
V
DD
A
NC
5
A
A
A
V
SS
V
SS
V
SS
WEb
V
SS
NC
V
SS
WEa
V
SS
V
SS
V
SS
NC
A
NC
6
A
A
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
7
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
Note :
* A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
PIN NAME
SYMBOL
A
A
0
, A
1
ADV
ADSP
ADSC
CLK
CS
1
WEx
(x=a,b,c,d)
OE
GW
BW
ZZ
LBO
PIN NAME
Address Inputs
Burst Count Address
Burst Address Advance
Address Status Processor
Address Status Controller
Clock
Chip Select
Byte Write Inputs
V
DD
V
SS
N.C.
DQa
DQb
DQc
DQd
DQPa~Pd
V
DDQ
SYMBOL
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
Data
Data
Data
Data
Data
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outpus
Output Enable
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
Output Power Supply
(2.5V or 3.3V)
-5-
February 2001
Rev 2.0
查看更多>
参数对比
与K7A161800M-QL15相近的元器件有:K7A163600M-QC15T、K7A161800M-HC15T、K7A161800M-QC15T、K7A163600M-QC14T、K7A163600M-HC16T、K7A161800M-HC14T、K7A161800M-QC16T、K7A161800M-QL16。描述及对比如下:
型号 K7A161800M-QL15 K7A163600M-QC15T K7A161800M-HC15T K7A161800M-QC15T K7A163600M-QC14T K7A163600M-HC16T K7A161800M-HC14T K7A161800M-QC16T K7A161800M-QL16
描述 Standard SRAM, 1MX18, 3.8ns, CMOS, PQFP100 Standard SRAM, 512KX36, 3.8ns, CMOS, PQFP100 Standard SRAM, 1MX18, 3.8ns, CMOS, PBGA119 Standard SRAM, 1MX18, 3.8ns, CMOS, PQFP100 Standard SRAM, 512KX36, 4ns, CMOS, PQFP100 Standard SRAM, 512KX36, 3.5ns, CMOS, PBGA119 Standard SRAM, 1MX18, 4ns, CMOS, PBGA119 Standard SRAM, 1MX18, 3.5ns, CMOS, PQFP100 Standard SRAM, 1MX18, 3.5ns, CMOS, PQFP100
是否无铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
包装说明 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 BGA, BGA119,7X17,50 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87 BGA, BGA119,7X17,50 BGA, BGA119,7X17,50 QFP, QFP100,.63X.87 QFP, QFP100,.63X.87
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknow unknown unknown
最长访问时间 3.8 ns 3.8 ns 3.8 ns 3.8 ns 4 ns 3.5 ns 4 ns 3.5 ns 3.5 ns
最大时钟频率 (fCLK) 150 MHz 150 MHz 150 MHz 150 MHz 138 MHz 166 MHz 138 MHz 166 MHz 166 MHz
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100 R-PBGA-B119 R-PBGA-B119 R-PQFP-G100 R-PQFP-G100
JESD-609代码 e1 e0 e0 e0 e0 e0 e0 e0 e1
内存密度 18874368 bit 18874368 bit 18874368 bit 18874368 bit 18874368 bit 18874368 bit 18874368 bi 18874368 bit 18874368 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 18 36 18 18 36 36 18 18 18
湿度敏感等级 3 3 3 3 3 3 3 3 3
端子数量 100 100 119 100 100 119 119 100 100
字数 1048576 words 524288 words 1048576 words 1048576 words 524288 words 524288 words 1048576 words 1048576 words 1048576 words
字数代码 1000000 512000 1000000 1000000 512000 512000 1000000 1000000 1000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 1MX18 512KX36 1MX18 1MX18 512KX36 512KX36 1MX18 1MX18 1MX18
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 QFP QFP BGA QFP QFP BGA BGA QFP QFP
封装等效代码 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 QFP100,.63X.87 QFP100,.63X.87 BGA119,7X17,50 BGA119,7X17,50 QFP100,.63X.87 QFP100,.63X.87
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLATPACK FLATPACK GRID ARRAY FLATPACK FLATPACK GRID ARRAY GRID ARRAY FLATPACK FLATPACK
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) 260 260 260 260 260 260 260 260 260
电源 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V 2.5/3.3,3.3 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大待机电流 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A 0.03 A
最小待机电流 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V 3.14 V
最大压摆率 0.4 mA 0.4 mA 0.4 mA 0.4 mA 0.38 mA 0.42 mA 0.38 mA 0.42 mA 0.42 mA
表面贴装 YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 TIN SILVER COPPER Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) TIN SILVER COPPER
端子形式 GULL WING GULL WING BALL GULL WING GULL WING BALL BALL GULL WING GULL WING
端子节距 0.635 mm 0.635 mm 1.27 mm 0.635 mm 0.635 mm 1.27 mm 1.27 mm 0.635 mm 0.635 mm
端子位置 QUAD QUAD BOTTOM QUAD QUAD BOTTOM BOTTOM QUAD QUAD
处于峰值回流温度下的最长时间 40 40 40 40 40 40 40 40 40
厂商名称 - SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) - -
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A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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