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K7A163601A-QC140

Cache SRAM, 512KX36, 4ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100

器件类别:存储    存储   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

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器件参数
参数名称
属性值
厂商名称
SAMSUNG(三星)
零件包装代码
QFP
包装说明
LQFP,
针数
100
Reach Compliance Code
unknown
ECCN代码
3A991.B.2.A
最长访问时间
4 ns
其他特性
PIPELINED ARCHITECTURE
JESD-30 代码
R-PQFP-G100
长度
20 mm
内存密度
18874368 bit
内存集成电路类型
CACHE SRAM
内存宽度
36
功能数量
1
端子数量
100
字数
524288 words
字数代码
512000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
512KX36
封装主体材料
PLASTIC/EPOXY
封装代码
LQFP
封装形状
RECTANGULAR
封装形式
FLATPACK, LOW PROFILE
并行/串行
PARALLEL
认证状态
Not Qualified
座面最大高度
1.6 mm
最大供电电压 (Vsup)
3.465 V
最小供电电压 (Vsup)
3.135 V
标称供电电压 (Vsup)
3.3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
0.65 mm
端子位置
QUAD
宽度
14 mm
文档预览
K7A163601A
K7A163201A
K7A161801A
Document Title
512Kx36/32 & 1Mx18 Synchronous SRAM
512Kx36/x32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
Revision History
Rev. No.
0.0
0.1
0.2
History
Initial draft
1. Add x32 org and industrial temperature .
1. Speed Bin Merge
From K7A1636(32/18)08A to K7A1636(32/18)01A
2. AC parameter change
tOH(min)/tHZC(min) from 0.8 to 1.5 at -25
tOH(min)/tHZC(min) from 1.0 to 1.5 at -22
tOH(min)/tHZC(min) from 1.0 to 1.5 at -20
1. Final spec release
1. Release Icc
part #
-25
-22
-20
-16
-14
From
440
400
370
340
280
To
470
430
400
350
290
Draft Date
Feb. 23. 2001
Aug. 30. 2001
Dec. 26. 2001
Remark
Preliminary
Preliminary
Preliminary
1.0
2.0
May. 10. 2002
May. 22. 2002
Final
Final
-1-
May 2002
Rev 2.0
K7A163601A
K7A163201A
K7A161801A
512Kx36/32 & 1Mx18 Synchronous SRAM
16Mb SB/SPB Synchronous SRAM Ordering Information
Org.
Part Number
Mode
VDD
Speed
SB ; Access Time(ns)
SPB ; Cycle Time(MHz)
6.5/7.5/8.5ns
138MHz
250/225/200/167/138MHz
250/225/200/167/138MHz
6.5/7.5/8.5ns
138MHz
250/225/200/167/138MHz
250/225/200/167/138MHz
6.5/7.5/8.5ns
138MHz
250/225/200/167/138MHz
250/225/200/167/138MHz
Q : 100TQFP
F : 165FBGA
C
(Commercial
Temperature
Range)
PKG
Temp
K7B161825A-Q(F)C(I)65/75/85
1Mx18
K7A161880A-QC(I)14
K7A161800A-Q(F)C(I)25/22/20/16/14
K7A161801A-QC(I)25/22/20/16/14
K7B163225A-QC(I)65/75/85
512Kx32 K7A163280A-QC(I)14
K7A163200A-QC(I)25/22/20/16/14
K7A163201A-QC(I)25/22/20/16/14
K7B163625A-Q(F)C(I)65/75/85
512Kx36
K7A163680A-QC(I)14
K7A163600A-Q(F)C(I)25/22/20/16/14
K7A163601A-QC(I)25/22/20/16/14
SB
SPB(2E1D)
SPB(2E1D)
SPB(2E2D)
SB
SPB(2E1D)
SPB(2E1D)
SPB(2E2D)
SB
SPB(2E1D)
SPB(2E1D)
SPB(2E2D)
3.3
1.8
3.3
3.3
3.3
1.8
3.3
3.3
3.3
1.8
3.3
3.3
I
(Industrial
Temperature
Range)
NOTE :
119BGA is only supported with K7A163600A - HC16 and K7B163625A - HC75.
-2-
May 2002
Rev 2.0
K7A163601A
K7A163201A
K7A161801A
512Kx36/32 & 1Mx18 Synchronous SRAM
512Kx36/32 & 1Mx18-Bit Synchronous Pipelined Burst SRAM
FEATURES
• Synchronous Operation.
• 2 Stage Pipelined operation with 4 Burst.
• On-Chip Address Counter.
• Self-Timed Write Cycle.
• On-Chip Address and Control Registers.
• V
DD
= 3.3V +0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V +0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O.
• 5V Tolerant Inputs Except I/O Pins.
• Byte Writable Function.
• Global Write Enable Controls a full bus-width write.
• Power Down State via ZZ Signal.
• LBO Pin allows a choice of either a interleaved burst or a linear
burst.
• Three Chip Enables for simple depth expansion with No Data
Contention ; 2cycle Enable, 2cycle Disable.
• Asynchronous Output Enable Control.
• ADSP , ADSC, ADV Burst Control Pins.
• TTL-Level Three-State Output.
• 100-TQFP-1420A Package
• Operating in commeical and industrial temperature range.
GENERAL DESCRIPTION
The K7A163601A , K7A163201A and K7A161801A are
18,874,368-bit Synchronous Static Random Access Memory
designed for high performance second level cache of Pentium
and Power PC based System.
It is organized as 512K(1M) words of 36(32/18) bits and inte-
grates address and control registers, a 2-bit burst address
counter and added some new functions for high performance
cache RAM applications; GW, BW, LBO, ZZ. Write cycles are
internally self-timed and synchronous.
Full bus-width write is done by GW, and each byte write is per-
formed by the combination of W Ex and BW when G W is high.
And with CS
1
high, ADSP is blocked to control signals.
Burst cycle can be initiated with either the address status pro-
cessor(ADSP) or address status cache controller(ADSC)
inputs. Subsequent burst addresses are generated internally in
the system′s burst sequence and are controlled by the burst
address advance(ADV) input.
LBO pin is DC operated and determines burst sequence(linear
or interleaved).
ZZ pin controls Power Down State and reduces Stand-by cur-
rent regardless of CLK.
The K7A163601A, K7A163201A and K7A161801A are fabri-
cated using SAMSUNG′s high performance CMOS technology
and is available in a 100pin TQFP package. Multiple power and
ground pins are utilized to minimize ground bounce.
FAST ACCESS TIMES
PARAMETER
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol
tCYC
tCD
tOE
-25
4.0
2.6
2.6
-22
4.4
2.8
2.8
-20
5.0
3.1
3.1
-16
6.0
3.5
3.5
-14
7.2
4.0
4.0
Unit
ns
ns
ns
LOGIC BLOCK DIAGRAM
CLK
LBO
CONTROL
REGISTER
ADV
ADSC
BURST CONTROL
LOGIC
BURST
ADDRESS
COUNTER
A
0
~A
1
A
0
~A
18
or A
0
~A
19
ADDRESS
REGISTER
A
2
~A
18
or A
2
~A
19
A′
0
~A′
1
512Kx36/32 , 1Mx18
MEMORY
ARRAY
ADSP
CS
1
CS
2
CS
2
GW
BW
WEx
(x=a,b,c,d or a,b)
OE
ZZ
DATA-IN
REGISTER
CONTROL
REGISTER
CONTROL
LOGIC
OUTPUT
REGISTER
BUFFER
DQa
0
~ DQd
7
or DQa0 ~ DQb7
DQPa ~ DQPd
DQPa,DQPb
-3-
May 2002
Rev 2.0
K7A163601A
K7A163201A
K7A161801A
PIN CONFIGURATION
(TOP VIEW)
WEd
WEc
512Kx36/32 & 1Mx18 Synchronous SRAM
ADSC
ADSP
WEb
WEa
ADV
83
CLK
CS
1
CS
2
CS
2
V
DD
GW
V
SS
BW
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
18
A
17
A
10
A
11
A
12
A
13
A
14
A
15
PIN NAME
SYMBOL
A
0
- A
18
PIN NAME
Address Inputs
TQFP PIN NO.
SYMBOL
V
DD
V
SS
N.C.
DQa
0
~a
7
DQb
0
~b
7
DQc
0
~ c
7
DQd
0
~d
7
DQPa~P
d
or N.C
V
DDQ
V
SSQ
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
Data Inputs/Outputs
TQFP PIN NO.
15,41,65,91
17,40,67,90
14,16,38,39,66
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
32,33,34,35,36,37,42
43,44,45,46,47,48,49
50,81,82,99,100
ADV
Burst Address Advance
83
ADSP
Address Status Processor 84
ADSC
Address Status Controller 85
CLK
Clock
89
CS
1
Chip Select
98
CS
2
Chip Select
97
CS
2
Chip Select
92
WEx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
OE
Output Enable
86
GW
Global Write Enable
88
BW
Byte Write Enable
87
ZZ
Power Down Input
64
LBO
Burst Mode Control
31
LBO
V
SS
Output Power Supply
(3.3V or 2.5V)
Output Ground
A
16
50
NC/DQPc
DQc
0
DQc
1
V
DDQ
V
SSQ
DQc
2
DQc
3
DQc
4
DQc
5
V
SSQ
V
DDQ
DQc
6
DQc
7
N.C.
V
DD
N.C.
V
SS
DQd
0
DQd
1
V
DDQ
V
SSQ
DQd
2
DQd
3
DQd
4
DQd
5
V
SSQ
V
DDQ
DQd
6
DQd
7
NC/DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
81
A
9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
100 Pin TQFP
(20mm x 14mm)
K7A163601A(512Kx36)
K7A163201A(512Kx32)
DQPb/NC
DQb
7
DQb
6
V
DDQ
V
SSQ
DQb
5
DQb
4
DQb
3
DQb
2
V
SSQ
V
DDQ
DQb
1
DQb
0
V
SS
N.C.
V
DD
ZZ
DQa
7
DQa
6
V
DDQ
V
SSQ
DQa
5
DQa
4
DQa
3
DQa
2
V
SSQ
V
DDQ
DQa
1
DQa
0
DQPa/NC
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
Note :
1. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-4-
May 2002
Rev 2.0
K7A163601A
K7A163201A
K7A161801A
PIN CONFIGURATION
(TOP VIEW)
512Kx36/32 & 1Mx18 Synchronous SRAM
ADS C
ADS P
WEb
WEa
N.C.
N.C.
ADV
83
CLK
CS
1
CS
2
CS
2
V
DD
GW
V
SS
BW
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
A
5
A
4
A
3
A
2
A
1
A
0
A
19
A
18
A
11
A
12
A
13
A
14
A
15
A
16
N.C.
N.C.
LBO
V
SS
PIN NAME
SYMBOL
A
0
- A
19
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,42
43,44,45,46,47,48,49
50 80,81,82,99,100
83
84
85
89
98
97
92
93,94
86
88
87
64
31
SYMBOL
V
DD
V
SS
N.C.
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
TQFP PIN NO.
15,41,65,91
17,40,67,90
1,2,3,6,7,14,16,25,28,29
30,38,39,51,52,53,56,57
66,75,78,79,95,96
58,59,62,63,68,69,72,73
8,9,12,13,18,19,22,23
74,24
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
ADV
ADSP
ADSC
CLK
CS
1
CS
2
CS
2
W Ex(x=a,b)
OE
GW
BW
ZZ
LBO
Burst Address Advance
Address Status Processor
Address Status Controller
Clock
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Global Write Enable
Byte Write Enable
Power Down Input
Burst Mode Control
V
DD
DQa
0
~ a
7
DQb
0
~ b
7
DQPa, Pb
V
DDQ
V
SSQ
Data Inputs/Outputs
Output Power Supply
(3.3V or 2.5V)
Output Ground
Note :
1. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-5-
A
17
50
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
0
DQb
1
V
SSQ
V
DDQ
DQb
2
DQb
3
N.C.
V
DD
N.C.
V
SS
DQb
4
DQb
5
V
DDQ
V
SSQ
DQb
6
DQb
7
DQPb
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7A161801A(1Mx18)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQPa
DQa
7
DQa
6
V
SSQ
V
DDQ
DQa
5
DQa
4
V
SS
N.C.
V
DD
ZZ
DQa
3
DQa
2
V
DDQ
V
SSQ
DQa
1
DQa
0
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
May 2002
Rev 2.0
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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