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K7I643682M-EC30T

Standard SRAM, 2MX36, 0.45ns, CMOS, PBGA165

器件类别:存储    存储   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
BGA, BGA165,11X15,40
Reach Compliance Code
unknown
Is Samacsys
N
最长访问时间
0.45 ns
最大时钟频率 (fCLK)
300 MHz
I/O 类型
COMMON
JESD-30 代码
R-PBGA-B165
JESD-609代码
e3
内存密度
75497472 bit
内存集成电路类型
STANDARD SRAM
内存宽度
36
湿度敏感等级
1
端子数量
165
字数
2097152 words
字数代码
2000000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
2MX36
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
BGA
封装等效代码
BGA165,11X15,40
封装形状
RECTANGULAR
封装形式
GRID ARRAY
并行/串行
PARALLEL
峰值回流温度(摄氏度)
225
电源
1.5/1.8,1.8 V
认证状态
Not Qualified
最小待机电流
1.7 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
MATTE TIN
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
K7I643682M
K7I641882M
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
72Mb DDRII SRAM Specification
165 FBGA with Pb & Pb-Free
(RoHS compliant)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.
ALL INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or simi-
lar applications where Product failure could result in loss of life or personal or physical harm, or any military
or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
-1-
Rev. 1.3 March 2007
K7I643682M
K7I641882M
Document Title
2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
Revision History
Rev. No.
0.0
0.1
History
1. Initial document.
1. Correct the JTAG ID register definition
2. Correct the AC timing parameter (delete the tKHKH Max value)
1. Add the Power-on Sequence specification
1. Correct the pin name table
1. Update the power consumption (Icc & Isb)
1. Finalize the datasheet
1. Add Pb-free comment
2. Change the Max. clock cycle time in AC TIMING CHARACTERIS-
TICS
1. Correct the pin name table
1. Add Detail Specification of Power up Sequence
Draft Date
Mar. 9, 2003
Mar. 20, 2003
Remark
Advance
Preliminary
0.2
0.3
0.4
1.0
1.1
Aug. 16, 2004
Oct. 18, 2004
May. 17, 2005
Aug. 2, 2005
Jul. 6, 2006
Preliminary
Preliminary
Preliminary
Final
Final
1.2
1.3
Jan. 23, 2007
Mar. 5, 2007
Final
Final
-2-
Rev. 1.3 March 2007
K7I643682M
K7I641882M
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM
FEATURES
• 1.8V+0.1V/-0.1V Power Supply.
• DLL circuitry for wide output data valid window and future fre-
quency scaling.
• I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O,
1.8V+0.1V/-0.1V for 1.8V I/O.
• Pipelined, double-data rate operation.
• Common data input/output bus.
• HSTL I/O
• Full data coherency, providing most current data.
• Synchronous pipeline read with self timed late write.
• Registered address, control and data input/output.
• DDR(Double Data Rate) Interface on read and write ports.
• Fixed 2-bit burst for both read and write operation.
• Clock-stop supports to reduce current.
• Two input clocks(K and K) for accurate DDR timing at clock
rising edges only.
• Two input clocks for output data(C and C) to minimize
clock-skew and flight-time mismatches.
• Two echo clocks (CQ and CQ) to enhance output data
traceability.
• Single address bus.
• Byte write function.
• Simple depth expansion with no data contention.
• Programmable output impedance.
• JTAG 1149.1 compatible test access port.
• 165FBGA(11x15 ball array FBGA) with body size of 15x17mm
& Lead Free
Org.
Part
Number
K7I643682M-F(E)C(I)30
X36 K7I643682M-F(E)C(I)25
K7I643682M-FC(I)20
K7I643682M-FC(I)16
K7I641882M-F(E)C(I)30
X18 K7I641882M-F(E)C(I)25
K7I641882M-FC(I)20
K7I641882M-FC(I)16
Cycle Access
Unit
Time Time
3.3
4.0
5.0
6.0
3.3
4.0
5.0
6.0
0.45
0.45
0.45
0.50
0.45
0.45
0.45
0.50
ns
ns
ns
ns
ns
ns
ns
ns
RoHS
Avail.
* -F(E)C(I)
F(E) [Package type]: E-Pb Free, F-Pb
C(I) [Operating Temperature]: C-Commercial, I-Industrial
FUNCTIONAL BLOCK DIAGRAM
36 (or 18)
DATA
REG
36 (or 18)
20
(or 21)
WRITE/READ DECODE
WRITE DRIVER
OUTPUT SELECT
LD
R/W
BW
X
4(or 2)
CTRL
LOGIC
2Mx36
(4Mx18)
MEMORY
ARRAY
36
(or 18)
72
(or 36)
OUTPUT DRIVER
ADDRESS
A0
SENSE AMPS
OUTPUT REG
20 (or 21)
ADD REG
&
BURST
LOGIC
36 (or 18)
DQ
CQ, CQ
K
K
C
C
(Echo Clock out)
CLK
GEN
SELECT OUTPUT CONTROL
Notes:
1. Numbers in ( ) are for x18 device.
DDRII SRAM and Double Data Rate comprise a new family of products developed by Cypress, Renesas, IDT, NEC and Samsung technology.
-3-
Rev. 1.3 March 2007
K7I643682M
K7I641882M
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
NC
/
SA*
DQ27
NC
DQ29
NC
DQ30
DQ31
V
REF
NC
NC
DQ33
NC
DQ35
NC
TCK
3
SA
DQ18
DQ28
DQ19
DQ20
DQ21
DQ22
V
DDQ
DQ32
DQ23
DQ24
DQ34
DQ25
DQ26
SA
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW
2
BW
3
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
6
K
K
SA0
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
BW
1
BW
0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
LD
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
DQ17
NC
DQ15
NC
NC
V
REF
DQ13
DQ12
NC
DQ11
NC
DQ9
TMS
11
CQ
DQ8
DQ7
DQ16
DQ6
DQ5
DQ14
ZQ
DQ4
DQ3
DQ2
DQ1
DQ10
DQ0
TDI
PIN CONFIGURATIONS
(TOP VIEW)
K7I643682M(2Mx36)
Notes:
1. * Checked No Connect(NC) pins are reserved for higher density address, i.e. 2A for 144Mb.
2. BW
0
controls write to DQ0:DQ8, BW
1
controls write to DQ9:DQ17, BW
2
controls write to DQ18:DQ26 and BW
3
controls write to DQ27:DQ35.
PIN NAME
SYMBOL
K, K
C, C
CQ, CQ
Doff
SA0
SA
DQ0-35
PIN NUMBERS
6B, 6A
6P, 6R
11A, 1A
1H
6C
3A,9A,10A,4B,8B,5C,7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
2B,3B,11B,3C,10C,11C,2D,3D,11D,3E,10E,11E,2F,3F
11F,2G,3G,11G,3J,10J,11J,3K,10K,11K,2L,3L,11L
3M,10M,11M,2N,3N,11N,3P,10P,11P
4A
8A
7B,7A,5A,5B
2H,10H
11H
5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,
4M-8M,4N,8N
10R
11R
2R
1R
2A,1B,9B,10B,1C,2C,9C,1D,9D,10D,1E,2E,9E,
1F,9F,10F,1G,9G,10G,1J,2J,9J,1K,2K,9K
1L,9L,10L,1M,2M,9M,1N,9N,10N,1P,2P,9P
DESCRIPTION
Input Clock
Input Clock for Output Data
Output Echo Clock
DLL Disable when low
Burst Count Address Inputs
Address Inputs
Data Inputs Outputs
Read, Write Control Pin, Read active
when high
Synchronous Load Pin, bus Cycle
sequence is to be defined when low
Block Write Control Pin,active when low
Input Reference Voltage
Output Driver Impedance Control Input
Power Supply (1.8 V)
Output Power Supply (1.5V or 1.8V)
Ground
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Clock
JTAG Test Data Output
No Connect
3
2
1
NOTE
R/W
LD
BW
0
, BW
1,
BW
2
, BW
3
V
REF
ZQ
V
DD
V
DDQ
V
SS
TMS
TDI
TCK
TDO
NC
Notes:
1. C, C, K or K cannot be set to V
REF
voltage.
2. When ZQ pin is directly connected to V
DD
output impedance is set to minimum value and it cannot be connected to ground or left unconnected.
3. Not connected to chip pad internally.
-4-
Rev. 1.3 March 2007
K7I643682M
K7I641882M
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
NC
NC
NC
Doff
NC
NC
NC
NC
NC
NC
TDO
2
SA
DQ9
NC
NC
NC
DQ12
NC
V
REF
NC
NC
DQ15
NC
NC
NC
TCK
3
SA
NC
NC
DQ10
DQ11
NC
DQ13
V
DDQ
NC
DQ14
NC
NC
DQ16
DQ17
SA
4
R/W
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
5
BW
1
NC
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
2Mx36 & 4Mx18 DDRII CIO b2 SRAM
6
K
K
SA0
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
SA
C
C
7
NC
BW
0
SA
V
SS
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
V
SS
SA
SA
SA
8
LD
SA
V
SS
V
SS
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
SS
V
SS
SA
SA
9
SA
NC
NC
NC
NC
NC
NC
V
DDQ
NC
NC
NC
NC
NC
NC
SA
10
SA
NC
DQ7
NC
NC
NC
NC
V
REF
DQ4
NC
NC
DQ1
NC
NC
TMS
11
CQ
DQ8
NC
NC
DQ6
DQ5
NC
ZQ
NC
DQ3
DQ2
NC
NC
DQ0
TDI
PIN CONFIGURATIONS
(TOP VIEW)
K7I641882M(4Mx18)
Notes:
1. BW
0
controls write to DQ0:DQ8 and BW
1
controls write to DQ9:DQ17.
PIN NAME
SYMBOL
K, K
C, C
CQ, CQ
Doff
SA0
SA
DQ0-17
R/W
LD
BW
0
, BW
1
V
REF
ZQ
V
DD
V
DDQ
V
SS
TMS
TDI
TCK
TDO
NC
PIN NUMBERS
6B, 6A
6P, 6R
11A, 1A
1H
6C
2A,3A,9A,10A,4B,8B,5C,7C,5N-7N,4P,5P,7P,8P,3R-5R,7R-9R
2B,11B,10C,3D,3E,11E,2F,11F,3G,10J,3K,11K,2L,11L
10M,3N,3P,11P
4A
8A
7B, 5A
2H,10H
11H
5F,7F,5G,7G,5H,7H,5J,7J,5K,7K
4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L
4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M-8M,4N,8N
10R
11R
2R
1R
7A,1B,3B,5B,9B,10B,1C,2C,3C,9C,11C,1D,2D,9D,10D,11D
1E,2E,9E,10E,1F,3F,9F,10F,1G,2G,9G,10G,11G
1J,2J,3J,9J,11J,1K,2K,9K,10K,1L,3L,9L,10L
1M,2M,3M,9M,11M,1N,2N,9N,10N,11N,1P,2P,9P,10P
DESCRIPTION
Input Clock
Input Clock for Output Data
Output Echo Clock
DLL Disable when low
Burst Count Address Inputs
Address Inputs
Data Inputs Outputs
Read, Write Control Pin, Read active
when high
Synchronous Load Pin, bus Cycle
sequence is to be defined when low
Block Write Control Pin,active when low
Input Reference Voltage
Output Driver Impedance Control Input
Power Supply (1.8 V)
Output Power Supply (1.5V or 1.8V)
Ground
JTAG Test Mode Select
JTAG Test Data Input
JTAG Test Clock
JTAG Test Data Output
No Connect
3
2
1
NOTE
Notes:
1. C, C, K or K cannot be set to V
REF
voltage.
2. When ZQ pin is directly connected to V
DD
output impedance is set to minimum value and it cannot be connected to ground or left unconnected.
3. Not connected to chip pad internally.
-5-
Rev. 1.3 March 2007
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