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K7M801825A-QC75T

ZBT SRAM, 512KX18, 7.5ns, CMOS, PQFP100

器件类别:存储    存储   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

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器件参数
参数名称
属性值
是否无铅
含铅
是否Rohs认证
不符合
厂商名称
SAMSUNG(三星)
包装说明
QFP, QFP100,.63X.87
Reach Compliance Code
unknown
最长访问时间
7.5 ns
最大时钟频率 (fCLK)
117 MHz
I/O 类型
COMMON
JESD-30 代码
R-PQFP-G100
JESD-609代码
e0
内存密度
9437184 bit
内存集成电路类型
ZBT SRAM
内存宽度
18
湿度敏感等级
3
端子数量
100
字数
524288 words
字数代码
512000
工作模式
SYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
512KX18
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
QFP
封装等效代码
QFP100,.63X.87
封装形状
RECTANGULAR
封装形式
FLATPACK
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
电源
2.5/3.3,3.3 V
认证状态
Not Qualified
最大待机电流
0.05 A
最小待机电流
3.14 V
最大压摆率
0.37 mA
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
0.635 mm
端子位置
QUAD
处于峰值回流温度下的最长时间
40
文档预览
K7M803625A
K7M801825A
Document Title
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
TM
Revision History
Rev. No.
0.0
1.0
History
1. Initial document.
1. Final spec Release.
2. Add 119BGA(7x17 Ball Grid Array Package)
Draft Date
May. 24. 2000
July. 03. 2000
Remark
Preliminary
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
July 2000
Rev 1.0
K7M803625A
K7M801825A
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
256Kx36 & 512Kx18-Bit Flow Through NtRAM
TM
FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O
• Byte Writable Function.
Εnable
clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data
contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A /119BGA(7x17 Ball Grid Array Package) .
GENERAL DESCRIPTION
The K7M803625A and K7M801825A are 9,437,184-bit Syn-
chronous Static SRAMs.
The NtRAM
TM
, or No Turnaround Random Access Memory uti-
lizes all bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, Flow-Through SRAM allows output data to
simply flow freely from the memory array.
The K7M803625A and K7M801825A are implemented with
SAMSUNG′s high performance CMOS technology and is avail-
able in 100pin TQFP and 119BGA packages. Multiple power
and ground pins minimize ground bounce.
FAST ACCESS TIMES
Parameter
Cycle Time
Clock Access Time
Output Enable Access Time
Symbol -75 -85 -90 -10 Unit
t
CYC
t
CD
t
OE
8.5 10
10
12
ns
7.5 8.5 9.0 10.0 ns
3.5 3.5 3.5 3.5
ns
LOGIC BLOCK DIAGRAM
LBO
A [0:17]or
A [0:18]
ADDRESS
REGISTER
A
2
~A
17
or A
2
~A
18
A
0
~A
1
BURST
ADDRESS
COUNTER
A′
0
~A′
1
256Kx36 , 512Kx18
MEMORY
ARRAY
CLK
CKE
K
WRITE
ADDRESS
REGISTER
K
DATA-IN
REGISTER
CONTROL
LOGIC
CS
1
CS
2
CS
2
ADV
WE
BW
x
(x=a,b,c,d or a,b)
OE
ZZ
DQa
0
~ DQd
7
or DQa
0
~ DQb
8
DQPa ~ DQPd
CONTROL
REGISTER
CONTROL
LOGIC
BUFFER
36 or 18
NtRAM
TM
and No Turnaround Random Access Memory are trademarks of Samsung,
and its architecture and functionalities are supported by NEC and Toshiba.
-2-
July 2000
Rev 1.0
K7M803625A
K7M801825A
PIN CONFIGURATION
(TOP VIEW)
BWd
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
BWb
BWa
BWc
CKE
ADV
N.C.
CLK
CS
1
CS
2
CS
2
V
DD
V
SS
WE
A
17
83
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
10
A
11
A
12
A
13
A
14
A
15
PIN NAME
SYMBOL
A
0
- A
17
PIN NAME
Address Inputs
TQFP PIN NO.
SYMBOL
V
DD
V
SS
N.C.
DQa
0
~a
7
DQb
0
~b
7
DQc
0
~c
7
DQd
0
~d
7
DQPa~P
d
V
DDQ
V
SSQ
PIN NAME
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,99,100
ADV
Address Advance/Load
85
WE
Read/Write Control Input 88
CLK
Clock
89
CKE
Clock Enable
87
CS
1
Chip Select
98
CS
2
Chip Select
97
CS
2
Chip Select
92
BWx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
OE
Output Enable
86
ZZ
Power Sleep Mode
64
LBO
Burst Mode Control
31
Power Supply(+3.3V) 15,16,41,65,91
Ground
14,17,40,66,67,90
No Connect
38,39,42,43,84
Data Inputs/Outputs
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
LBO
V
SS
Output Power Supply 4,11,20,27,54,61,70,77
(2.5V or 3.3V)
Output Ground
5,10,21,26,55,60,71,76
Notes :
1. The pin 84 is reserved for address bit for the 16Mb NtRAM.
2. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-3-
A
16
50
DQPc
DQc
0
DQc
1
V
DDQ
V
SSQ
DQc
2
DQc
3
DQc
4
DQc
5
V
SSQ
V
DDQ
DQc
6
DQc
7
Vss
V
DD
V
DD
V
SS
DQd
0
DQd
1
V
DDQ
V
SSQ
DQd
2
DQd
3
DQd
4
DQd
5
V
SSQ
V
DDQ
DQd
6
DQd
7
DQPd
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7M803625A(256Kx36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb
DQb
7
DQb
6
V
DDQ
V
SSQ
DQb
5
DQb
4
DQb
3
DQb
2
V
SSQ
V
DDQ
DQb
1
DQb
0
V
SS
V
SS
V
DD
ZZ
DQa
7
DQa
6
V
DDQ
V
SSQ
DQa
5
DQa
4
DQa
3
DQa
2
V
SSQ
V
DDQ
DQa
1
DQa
0
DQPa
July 2000
Rev 1.0
K7M803625A
K7M801825A
PIN CONFIGURATION
(TOP VIEW)
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
BWb
BWa
CKE
ADV
CS
2
N.C.
N.C.
N.C.
CLK
CS
1
CS
2
V
DD
V
SS
WE
A
18
83
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
11
A
12
A
13
A
14
A
15
A
16
PIN NAME
SYMBOL
A
0
- A
18
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,83,99,100
85
88
89
87
98
97
92
93,94
86
64
31
SYMBOL
V
DD
V
SS
N.C.
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
TQFP PIN NO.
15,16,41,65,91
14,17,40,66,67,90
1,2,3,6,7,25,28,29,30,
38,39,42,43,51,52,53,
56,57,75,78,79,84,95,96
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BWx(x=a,b)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
LBO
V
SS
DQa
0
~a
8
DQb
0
~b
8
Data Inputs/Outputs
V
DDQ
V
SSQ
Output Power Supply
(2.5V or 3.3V)
Output Ground
A
17
50
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
8
DQb
7
V
SSQ
V
DDQ
DQb
6
DQb
5
V
SS
V
DD
V
DD
V
SS
DQb
4
DQb
3
V
DDQ
V
SSQ
DQb
2
DQb
1
DQb
0
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7M801825A(512Kx18)
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQa
0
DQa
1
DQa
2
V
SSQ
V
DDQ
DQa
3
DQa
4
V
SS
V
SS
V
DD
ZZ
DQa
5
DQa
6
V
DDQ
V
SSQ
DQa
7
DQa
8
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
Notes :
1. The pin 84 is reserved for address bit for the 16Mb NtRAM.
2. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-4-
July 2000
Rev 1.0
K7M803625A
K7M801825A
256Kx36 & 512Kx18 Flow-Through NtRAM
TM
119BGA PACKAGE PIN CONFIGURATIONS
(TOP VIEW)
K7M803625A(256Kx36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
V
DDQ
NC
NC
DQc
DQc
V
DDQ
DQc
DQc
V
DDQ
DQd
DQd
V
DDQ
DQd
DQd
NC
NC
V
DDQ
2
A
CS
2
A
DQPc
DQc
DQc
DQc
DQc
V
DD
DQd
DQd
DQd
DQd
DQPd
A
NC
NC
3
A
A
A
V
SS
V
SS
V
SS
BWc
V
SS
NC
V
SS
BWd
V
SS
V
SS
V
SS
LBO
A
NC
4
NC**
ADV
V
DD
NC
CS
1
OE
A
WE
V
DD
CLK
NC
CKE
A
1
*
A
0
*
V
DD
A
NC
5
A
A
A
V
SS
V
SS
V
SS
BWb
V
SS
NC
V
SS
BWa
V
SS
V
SS
V
SS
NC
A
NC
6
A
CS
2
A
DQPb
DQb
DQb
DQb
DQb
V
DD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
7
V
DDQ
NC
NC
DQb
DQb
V
DDQ
DQb
DQb
V
DDQ
DQa
DQa
V
DDQ
DQa
DQa
NC
ZZ
V
DDQ
Note :
* A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
** Pin 4A is reserved for address expansion to 16Mb.
PIN NAME
SYMBOL
A
A
0
,A
1
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BWx
(x=a,b,c,d)
OE
ZZ
LBO
Address Inputs
Burst Address Inputs
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
PIN NAME
V
DD
V
SS
N.C.
DQa
DQb
DQc
DQd
DQPa~Pd
V
DDQ
Output Enable
Power Sleep Mode
Burst Mode Control
SYMBOL
Power Supply
Ground
No Connect
Data
Data
Data
Data
Data
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
Inputs/Outputs
PIN NAME
Output Power Supply
-5-
July 2000
Rev 1.0
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