K7M163625A
K7M161825A
Document Title
512Kx36 & 1Mx18 Flow-Through NtRAM
TM
512Kx36 & 1Mx18-Bit Flow Through NtRAM
TM
Revision History
Rev. No.
0.0
0.1
0.2
0.3
History
1.
1.
1.
2.
1.
2.
Initial document.
Add JTAG Scan Order
Remove bin -90
Updated DC characteristics(ICC,ISB,ISB1,ISB2)
Add x32 org and industrial temperature .
Add 165FBGA package
Draft Date
Feb. 23. 2001
May. 10. 2001
Aug. 03. 2001
Aug. 30. 2001
Remark
Preliminary
Preliminary
Preliminary
Preliminary
1.0
2.0
2.1
1. Final spec release
1. Add the speed bin (-60)
1. Delete 119BGA package.
2. Correct the Ball Size of 165 FBGA.
1. Delete x32 Org. and 165FBGA pkg. type.
2. Delete the 6.0ns and 8.5ns speed bin
May. 10. 2002
Oct. 26, 2002
April. 04. 2003
Final
Final
Final
3.0
Nov. 17, 2003
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Nov. 2003
Rev 3.0
K7M163625A
K7M161825A
512Kx36 & 1Mx18 Flow-Through NtRAM
TM
16Mb NtRAM(Flow Through / Pipelined) Ordering Informa
tion
Org.
Part Number
Mode
VDD
Speed
FT ; Access Time(ns)
Pipelined ; Cycle Time(MHz)
6.5/7.5 ns
250/200/167/133MHz
250/200/167/133MHz
6.5/7.5 ns
250/200/167/133MHz
250/200/167/133MHz
Q : 100TQFP
F : 165FBGA
PKG
Temp
K7M161825A-QC(I)65/75
1Mx18
K7N161801A-Q(F)C(I)25/20/16/13
K7N161845A-Q(F)C(I)25/20/16/13
K7M163625A-QC(I)65/75
512Kx36 K7N163601A-Q(F)C(I)25/20/16/13
K7N163645A-Q(F)C(I)25/20/16/13
FlowThrough
Pipelined
Pipelined
FlowThrough
Pipelined
Pipelined
3.3
3.3
2.5
3.3
3.3
2.5
C
; Commercial
Temp.Range
I
; Industrial
Temp.Range
-2-
Nov. 2003
Rev 3.0
K7M163625A
K7M161825A
512Kx36 & 1Mx18 Flow-Through NtRAM
TM
512Kx36 & 1Mx18-Bit Flow Through NtRAM
TM
FEATURES
• 3.3V+0.165V/-0.165V Power Supply.
• I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O
or 2.5V+0.4V/-0.125V for 2.5V I/O
• Byte Writable Function.
• Enable clock and suspend operation.
• Single READ/WRITE control pin.
• Self-Timed Write Cycle.
• Three Chip Enable for simple depth expansion with no data
contention .
• A interleaved burst or a linear burst mode.
• Asynchronous output enable control.
• Power Down mode.
• TTL-Level Three-State Outputs.
• 100-TQFP-1420A
• Operating in commeical and industrial temperature range.
GENERAL DESCRIPTION
The K7M163625A and K7M161825A are 18,874,368-bits Syn-
chronous Static SRAMs.
The NtRAM
TM
, or No Turnaround Random Access Memory uti-
lizes all bandwidth in any combination of operating cycles.
Address, data inputs, and all control signals except output
enable and linear burst order are synchronized to input clock.
Burst order control must be tied "High or Low".
Asynchronous inputs include the sleep mode enable(ZZ).
Output Enable controls the outputs at any given time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-chip
write pulse generation
and provides increased timing flexibility for incoming signals.
For read cycles, Flow-Through SRAM allows output data to
simply flow freely from the memory array.
The K7M163625A and K7M161825A are implemented with
SAMSUNG′s high performance CMOS technology and is avail-
able in 100pin TQFP packages. Multiple power and ground pins
minimize ground bounce.
FAST ACCESS TIMES
Parameter
Cycle Time
Clock Access Time
Output Enable Access Time
Sym.
t
CYC
t
CD
t
OE
-65
7.5
6.5
3.5
-75
8.5
7.5
3.5
Unit
ns
ns
ns
LOGIC BLOCK DIAGRAM
LBO
A [0:18]or
A [0:19]
ADDRESS
REGISTER
A
2
~A
18
or A
2
~A
19
A
0
~A
1
BURST
ADDRESS
COUNTER
A′
0
~A′
1
512Kx36, 1Mx18
MEMORY
ARRAY
CLK
CKE
K
WRITE
ADDRESS
REGISTER
K
DATA-IN
REGISTER
CONTROL
LOGIC
CS
1
CS
2
CS
2
ADV
WE
BW
x
(x=a,b,c,d or a,b)
OE
ZZ
DQa
0
~ DQd
7
or DQa
0
~ DQb
8
DQPa ~ DQPd
CONTROL
REGISTER
CONTROL
LOGIC
BUFFER
36 or 18
NtRAM
TM
and No Turnaround Random Access Memory are trademarks of Samsung.
-3-
Nov. 2003
Rev 3.0
K7M163625A
K7M161825A
PIN CONFIGURATION
(TOP VIEW)
BWd
512Kx36 & 1Mx18 Flow-Through NtRAM
TM
BWb
BWa
BWc
CK E
ADV
CLK
CS
1
CS
2
CS
2
V
DD
V
SS
WE
A
18
A
17
83
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
10
A
11
A
12
A
13
A
14
A
15
PIN NAME
SYMBOL
A
0
- A
18
PIN NAME
Address Inputs
TQFP PIN NO.
SYMBOL
V
DD
V
SS
N.C.
DQa
0
~a
7
DQb
0
~b
7
DQc
0
~ c
7
DQd
0
~d
7
DQPa~P
d
or NC
V
DDQ
V
SSQ
PIN NAME
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,81
82,83,84,99,100
ADV
Address Advance/Load
85
WE
Read/Write Control Input 88
CLK
Clock
89
CKE
Clock Enable
87
CS
1
Chip Select
98
CS
2
Chip Select
97
CS
2
Chip Select
92
B Wx(x=a,b,c,d) Byte Write Inputs
93,94,95,96
OE
Output Enable
86
ZZ
Power Sleep Mode
64
LBO
Burst Mode Control
31
Power Supply(+3.3V) 15,16,41,65,91
Ground
14,17,40,66,67,90
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
Data Inputs/Outputs
38,39,42,43
52,53,56,57,58,59,62,63
68,69,72,73,74,75,78,79
2,3,6,7,8,9,12,13
18,19,22,23,24,25,28,29
51,80,1,30
LBO
V
SS
Output Power Supply
(2.5V or 3.3V)
Output Ground
A
16
50
NC/DQPc
DQc
0
DQc
1
V
DDQ
V
SSQ
DQc
2
DQc
3
DQc
4
DQc
5
V
SSQ
V
DDQ
DQc
6
DQc
7
Vss
V
DD
V
DD
V
SS
DQd
0
DQd
1
V
DDQ
V
SSQ
DQd
2
DQd
3
DQd
4
DQd
5
V
SSQ
V
DDQ
DQd
6
DQd
7
NC/DQPd
81
A
9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7M163625A(512Kx36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPb/NC
DQb
7
DQb
6
V
DDQ
V
SSQ
DQb
5
DQb
4
DQb
3
DQb
2
V
SSQ
V
DDQ
DQb
1
DQb
0
V
SS
V
SS
V
DD
ZZ
DQa
7
DQa
6
V
DDQ
V
SSQ
DQa
5
DQa
4
DQa
3
DQa
2
V
SSQ
V
DDQ
DQa
1
DQa
0
DQPa/NC
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
Notes :
1. A
0
and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
-4-
Nov. 2003
Rev 3.0
K7M163625A
K7M161825A
PIN CONFIGURATION
(TOP VIEW)
512Kx36 & 1Mx18 Flow-Through NtRAM
TM
BWb
BWa
CK E
N.C.
ADV
CS
2
N.C.
CLK
CS
1
CS
2
V
DD
V
SS
WE
A
19
A
18
83
OE
A
6
A
7
A
8
82
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
81
A
9
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
N.C.
N.C.
N.C.
N.C.
V
DD
A
5
A
4
A
3
A
2
A
1
A
0
A
11
A
12
A
13
A
14
A
15
A
16
PIN NAME
SYMBOL
A
0
- A
19
PIN NAME
Address Inputs
TQFP PIN NO.
32,33,34,35,36,37,44
45,46,47,48,49,50,80
81,82,83,84,99,100
85
88
89
87
98
97
92
93,94
86
64
31
SYMBOL
V
DD
V
SS
N.C.
PIN NAME
Power Supply(+3.3V)
Ground
No Connect
TQFP PIN NO.
15,16,41,65,91
14,17,40,66,67,90
1,2,3,6,7,25,28,29,30,
38,39,42,43,51,52,53,
56,57,75,78,79,95,96
58,59,62,63,68,69,72,73,74
8,9,12,13,18,19,22,23,24
ADV
WE
CLK
CKE
CS
1
CS
2
CS
2
BW x(x=a,b)
OE
ZZ
LBO
Address Advance/Load
Read/Write Control Input
Clock
Clock Enable
Chip Select
Chip Select
Chip Select
Byte Write Inputs
Output Enable
Power Sleep Mode
Burst Mode Control
LBO
V
SS
DQa
0
~a
8
DQb
0
~b
8
Data Inputs/Outputs
Data Inputs/Outputs
V
DDQ
V
SSQ
Output Power Supply
(2.5V or 3.3V)
Output Ground
A
17
50
N.C.
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
N.C.
DQb
8
DQb
7
V
SSQ
V
DDQ
DQb
6
DQb
5
V
SS
V
DD
V
DD
V
SS
DQb
4
DQb
3
V
DDQ
V
SSQ
DQb
2
DQb
1
DQb
0
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
100 Pin TQFP
(20mm x 14mm)
K7M161825A(1Mx18)
A
10
N.C.
N.C.
V
DDQ
V
SSQ
N.C.
DQa
0
DQa
1
DQa
2
V
SSQ
V
DDQ
DQa
3
DQa
4
V
SS
V
SS
V
DD
ZZ
DQa
5
DQa
6
V
DDQ
V
SSQ
DQa
7
DQa
8
N.C.
N.C.
V
SSQ
V
DDQ
N.C.
N.C.
N.C.
4,11,20,27,54,61,70,77
5,10,21,26,55,60,71,76
Notes :
1. A and A
1
are the two least significant bits(LSB) of the address field and set the internal burst counter if burst is desired.
0
-5-
Nov. 2003
Rev 3.0
