首页 > 器件类别 > 存储 > 存储

K8D6316UTM-PC070

Flash, 4MX16, 70ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48

器件类别:存储    存储   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
SAMSUNG(三星)
零件包装代码
TSOP1
包装说明
12 X 20 MM, 0.50 MM PITCH, LEAD FREE, PLASTIC, TSOP1-48
针数
48
Reach Compliance Code
compliant
ECCN代码
3A991.B.1.A
最长访问时间
70 ns
备用内存宽度
8
启动块
TOP
命令用户界面
YES
通用闪存接口
YES
数据轮询
YES
JESD-30 代码
R-PDSO-G48
长度
18.4 mm
内存密度
67108864 bit
内存集成电路类型
FLASH
内存宽度
16
湿度敏感等级
2
功能数量
1
部门数/规模
8,127
端子数量
48
字数
4194304 words
字数代码
4000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
4MX16
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP1
封装等效代码
TSSOP48,.8,20
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
并行/串行
PARALLEL
峰值回流温度(摄氏度)
260
电源
3/3.3 V
编程电压
2.7 V
认证状态
Not Qualified
就绪/忙碌
YES
座面最大高度
1.2 mm
部门规模
8K,64K
最大待机电流
0.00003 A
最大压摆率
0.05 mA
最大供电电压 (Vsup)
3.6 V
最小供电电压 (Vsup)
2.7 V
标称供电电压 (Vsup)
3 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子形式
GULL WING
端子节距
0.5 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
40
切换位
YES
类型
NOR TYPE
宽度
12 mm
文档预览
K8D6x16UTM / K8D6x16UBM
NOR FLASH MEMORY
Document Title
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
Revision History
Revision No. History
0.0
1.0
1.1
Initial Draft
Final Specification
Revised
- Release the stand-by current from typ. 5uA(max. 18uA) to typ.
10uA(max. 30uA).
Not support 48TSOP1 Package
Not support 16M/16M BANK partition
Support 48TSOP1 Package
Support 48TSOP1 Lead Free Package
Support 48FBGA Leaded/Lead Free Package
Draft Date
January 10, 2002
May 22, 2002
June 18, 2003
Remark
Preliminary
Final
1.2
November 18, 2003
1.3
1.4
1.5
1.6
July 22, 2004
September 16, 2004
March 16, 2005
"Asynchronous mode may not support read following four sequential September 08, 2006
invalid read condition within 200ns." is added
1
Revision 1.6
September, 2006
K8D6x16UTM / K8D6x16UBM
NOR FLASH MEMORY
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
FEATURES
Single Voltage, 2.7V to 3.6V for Read and Write operations
Organization
8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode)
Fast Read Access Time : 70ns
Read While Program/Erase Operation
Dual Bank architectures
Bank 1 / Bank 2 : 16Mb / 48Mb
Secode(Security Code) Block : Extra 64K Byte block
Power Consumption (typical value @5MHz)
- Read Current : 14mA
- Program/Erase Current : 15mA
- Read While Program or Read While Erase Current : 25mA
- Standby Mode/Auto Sleep Mode : 10µA
WP/ACC input pin
- Allows special protection of two outermost boot blocks at V
IL
,
regardless of block protect status
- Removes special protection of two outermost boot block at V
IH,
the two blocks return to normal block protect status
- Program time at V
HH
: 9µs/word
Erase Suspend/Resume
Unlock Bypass Program
Hardware RESET Pin
Command Register Operation
Block Group Protection / Unprotection
Supports Common Flash Memory Interface
Industrial Temperature : -40°C to 85°C
Endurance : 100,000 Program/Erase Cycles Minimum
Data Retention : 10 years
Package : 48 Pin TSOP1 : 12 x 20 mm / 0.5 mm Pin pitch
48 Ball TBGA : 6 x 9 mm / 0.8 mm Ball pitch
48 Ball FBGA : 6 x 9 mm / 0.8 mm Ball pitch
GENERAL DESCRIPTION
The K8D6316U featuring single 3.0V power supply, is a 64Mbit
NOR-type Flash Memory organized as 8Mx8 or 4M x16. The
memory architecture of the device is designed to divide its
memory arrays into 135 blocks to be protected by the block
group. This block architecture provides highly flexible erase and
program capability. The K8D6316U NOR Flash consists of two
banks. This device is capable of reading data from one bank
while programming or erasing in the other bank. Access times
of 70ns, 80ns and 90ns are available for the device. The
device′s fast access times allow high speed microprocessors to
operate without wait states. The device performs a program
operation in units of 8 bits (Byte) or 16 bits (Word) and erases in
units of a block. Single or multiple blocks can be erased. The
block erase operation is completed within typically 0.7 sec. The
device requires 15mA as program/erase current in the standard
and industrial temperature ranges.
The K8D6316U NOR Flash Memory is created by using Sam-
sung's advanced CMOS process technology. This device is
available in 48 pin TSOP1 and 48 ball TBGA,FBGA packages.
The device is compatible with EPROM applications to require
high-density and cost-effective nonvolatile read/write storage
solutions.
PIN DESCRIPTION
Pin Name
A0 - A21
Pin Function
Address Inputs
Data Inputs / Outputs
DQ15 Data Input / Output
A-1 LSB Address
Word / Byte Selection
Chip Enable
Output Enable
Hardware Reset Pin
Ready/Busy Output
Write Enable
Hardware Write Protection/Program
Acceleration
Power Supply
Ground
No Connection
PIN CONFIGURATION
A15
A14
A13
A12
A11
A10
A9
A8
A19
A20
WE
RESET
A21
WP/ACC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
Vss
CE
A0
DQ0 - DQ14
DQ15/A-1
BYTE
CE
OE
RESET
RY/BY
WE
WP/ACC
Vcc
V
SS
N.C
48-pin TSOP1
Standard Type
12mm x 20mm
Note :
Please refer to the package dimension.
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to change products and specifications without notice.
2
Revision 1.6
September, 2006
K8D6x16UTM / K8D6x16UBM
48 Ball TBGA/FBGA TOP VIEW (BALL DOWN)
1
2
3
4
5
NOR FLASH MEMORY
6
A
A3
A7
RY/BY
WE
A9
A13
B
A4
A17
WP/
ACC
RESET
A8
A12
C
A2
A6
A18
A21
A10
A14
D
A1
A5
A20
A19
A11
A15
E
A0
DQ0
DQ2
DQ5
DQ7
A16
F
CE
DQ8
DQ10
DQ12
DQ14
BYTE
G
OE
DQ9
DQ11
V
CC
DQ13
DQ15/
A-1
H
V
SS
DQ1
DQ3
DQ4
DQ6
V
SS
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
Bank1
Address
X
Dec
Bank1
Cell Array
Y Dec
CE
OE
WE
BYTE
RESET
RY/BY
WP/ACC
A0~A21
DQ15/A-1
DQ0~DQ14
Erase
Control
Program
Control
I/O
Interface
&
Bank
Control
Bank1 Data-In/Out
Bank2 Data-In/Out
Latch &
Control
Y Dec
Bank2
Address
Latch &
Control
X
Dec
Bank2
Cell Array
High
Voltage
Gen.
3
Revision 1.6
September, 2006
K8D6x16UTM / K8D6x16UBM
ORDERING INFORMATION
NOR FLASH MEMORY
K 8 D 6x 1 6 U T M - T I 0 7
Samsung
NOR Flash Memory
Device Type
Dual Bank Boot Block
Access Time
07 = 70 ns
08 = 80 ns
09 = 90 ns
Operating Temperature Range
C = Commercial Temp. (0
°C
to 70
°C)
I = Industrial Temp. (-40
°C
to 85
°C)
Package
P = 48TSOP1(Lead-Free) Y = 48 TSOP1
D : FBGA(Lead Free)
F : FBGA
L : TBGA(Lead Free)
T : TBGA
Version
M = 1st Generation
Block Architecture
T = Top Boot Block
B = Bottom Boot Block
Bank Division
63 = 16Mbits + 48Mbits
Organization
x8/x16 Selectable
Operating Voltage Range
2.7V to 3.6V
Table 1. PRODUCT LINE-UP
Part No.
Vcc
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
70ns
70ns
25ns
-7
-8
2.7V~3.6V
80ns
80ns
25ns
90ns
90ns
35ns
-9
Table 2. K8D6316U DEVICE BANK DIVISIONS
Device
Part Number
K8D6316U
Bank 1
Mbit
16 Mbit
Block Sizes
Eight 8 Kbyte/4 Kword,
thirty-one 64 Kbyte/32 Kword
Mbit
48 Mbit
Bank 2
Block Sizes
Ninety-six
64 Kbyte/32 Kword
4
Revision 1.6
September, 2006
K8D6x16UTM / K8D6x16UBM
Table 3. Top Boot Block Address (K8D6316UT)
K8D6316UT
Block
Block Address
A21
A20
A19
A18
A17
A16
A15
A14
A13
A12
NOR FLASH MEMORY
Address Range
Byte Mode
Word Mode
Block Size
(KB/KW)
BA134
BA133
BA132
BA131
BA130
BA129
BA128
BA127
BA126
BA125
BA124
BA123
BA122
BA121
BA120
BA119
BA118
Bank1
BA117
BA116
BA115
BA114
BA113
BA112
BA111
BA110
BA109
BA108
BA107
BA106
BA105
BA104
BA103
BA102
BA101
BA100
BA99
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
1
1
1
1
1
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
1
1
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
1
0
0
0
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1
1
0
0
1
1
0
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
1
0
1
0
1
0
1
0
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
8/4
8/4
8/4
8/4
8/4
8/4
8/4
8/4
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
7FE000H-7FFFFFH
7FC000H-7FDFFFH
7FA000H-7FBFFFH
7F8000H-7F9FFFH
7F6000H-7F7FFFH
7F4000H-7F5FFFH
7F2000H-7F3FFFH
7F0000H-7F1FFFH
7E0000H-7EFFFFH
7D0000H-7DFFFFH
7C0000H-7CFFFFH
7B0000H-7BFFFFH
7A0000H-7AFFFFH
790000H-79FFFFH
780000H-78FFFFH
770000H-77FFFFH
760000H-76FFFFH
750000H-75FFFFH
740000H-74FFFFH
730000H-73FFFFH
720000H-72FFFFH
710000H-71FFFFH
700000H-70FFFFH
6F0000H-6FFFFFH
6E0000H-6EFFFFH
6D0000H-6DFFFFH
6C0000H-6CFFFFH
6B0000H-6BFFFFH
6A0000H-6AFFFFH
690000H-69FFFFH
680000H-68FFFFH
670000H-67FFFFH
660000H-66FFFFH
650000H-65FFFFH
640000H-64FFFFH
630000H-63FFFFH
3FF000H-3FFFFFH
3FE000H-3FEFFFH
3FD000H-3FDFFFH
3FC000H-3FCFFFH
3FB000H-3FBFFFH
3FA000H-3FAFFFH
3F9000H-3F9FFFH
3F8000H-3F8FFFH
3F0000H-3F7FFFH
3E8000H-3EFFFFH
3E0000H-3E7FFFH
3D8000H-3DFFFFH
3D0000H-3D7FFFH
3C8000H-3CFFFFH
3C0000H-3C7FFFH
3B8000H-3BFFFFH
3B0000H-3B7FFFH
3A8000H-3AFFFFH
3A0000H-3A7FFFH
398000H-39FFFFH
390000H-397FFFH
388000H-38FFFFH
380000H-387FFFH
378000H-37FFFFH
370000H-377FFFH
368000H-36FFFFH
360000H-367FFFH
358000H-35FFFFH
350000H-357FFFH
348000H-34FFFFH
340000H-347FFFH
338000H-33FFFFH
330000H-337FFFH
328000H-32FFFFH
320000H-327FFFH
318000H-31FFFFH
5
Revision 1.6
September, 2006
查看更多>
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消