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K9F2808Q0C-BIB0

Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48

器件类别:存储    存储   

厂商名称:SAMSUNG(三星)

厂商官网:http://www.samsung.com/Products/Semiconductor/

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器件参数
参数名称
属性值
厂商名称
SAMSUNG(三星)
零件包装代码
BGA
包装说明
VFBGA,
针数
48
Reach Compliance Code
compliant
ECCN代码
3A991.B.1.A
最长访问时间
30 ns
其他特性
CONTAINS ADDITIONAL 4M BIT NAND FLASH
JESD-30 代码
R-PBGA-B48
长度
8.5 mm
内存密度
134217728 bit
内存集成电路类型
FLASH
内存宽度
8
功能数量
1
端子数量
48
字数
16777216 words
字数代码
16000000
工作模式
ASYNCHRONOUS
最高工作温度
85 °C
最低工作温度
-40 °C
组织
16MX8
封装主体材料
PLASTIC/EPOXY
封装代码
VFBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行
PARALLEL
编程电压
1.8 V
认证状态
Not Qualified
座面最大高度
1 mm
最大供电电压 (Vsup)
1.95 V
最小供电电压 (Vsup)
1.65 V
标称供电电压 (Vsup)
1.8 V
表面贴装
YES
技术
CMOS
温度等级
INDUSTRIAL
端子形式
BALL
端子节距
0.8 mm
端子位置
BOTTOM
类型
SLC NAND TYPE
宽度
6 mm
文档预览
K9F2808Q0C-BCB0,BIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-BCB0,BIB0
K9F2816Q0C-BCB0,BIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-BCB0,BIB0
K9F2808U0C-VCB0,VIB0
Advance
FLASH MEMORY
Document Title
16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
Initial issue.
Draft Date
Apr. 15th 2002
Remark
Advance
Note : For more detailed features and specifications including FAQ, please refer to Samsung’ Flash web site.
s
http://www.intl.samsungsemi.com/Memory/Flash/datasheets.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
1
K9F2808Q0C-BCB0,BIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-BCB0,BIB0
K9F2816Q0C-BCB0,BIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-BCB0,BIB0
K9F2808U0C-VCB0,VIB0
Advance
FLASH MEMORY
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F2808Q0C-B
K9F2816Q0C-B
K9F2808U0C-Y
K9F2808U0C-B
K9F2808U0C-V
K9F2816U0C-Y
K9F2816U0C-B
2.7 ~ 3.6V
X16
X8
Vcc Range
1.65 ~ 1.95V
Organization
X8
X16
TSOP1
TBGA
WSOP1
TSOP1
TBGA
PKG Type
TBGA
FEATURES
Voltage Supply
- 1.8V device(K9F28XXQ0C) : 1.65~1.95V
- 3.3V device(K9F28XXU0C) : 2.7 ~ 3.6 V
Organization
- Memory Cell Array
- X8 device(K9F2808X0C) : (16M + 512K)bit x 8bit
- X16 device(K9F2816X0C) : (8M + 256K)bit x 16bit
- Data Register
- X8 device(K9F2808X0C) : (512 + 16)bit x 8bit
- X16 device(K9F2816X0C) : (256 + 8)bit x16bit
Automatic Program and Erase
- Page Program
- X8 device(K9F2808X0C) : (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- Block Erase :
- X8 device(K9F2808X0C) : (16K + 512)Byte
- X16 device(K9F2816X0C) : ( 8K + 256)Word
Page Read Operation
- Page Size
- X8 device(K9F2808X0C) : (512 + 16)Byte
- X16 device(K9F2816X0C) : (256 + 8)Word
- Random Access
: 10µs(Max.)
- Serial Page Access : 50ns(Min.)
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
Command Register Operation
Intelligent Copy-Back
Unique ID for Copyright Protection
Package
- K9F28XXU0C-YCB0/YIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)
- K9F28XXX0C-BCB0/BIB0
48- Ball TBGA ( 6 x 8.5 /0.8mm pitch , Width 1.0 mm)
- K9F2808U0C-VCB0/VIB0
48 - Pin WSOP I (12X17X0.7mm)
*
K9F2808U0C-V(WSOPI ) is the same device as
K9F2808U0C-Y(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 16Mx8bit or 8Mx16bit, the K9F28XXX0C is 128M bit with spare 4M bit capacity. The device is offered in 1.8V or 3.3V Vcc.
Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation programs the
528-byte(X8 device) or 264-word(X16 device) page in typical 200µs and an erase operation can be performed in typical 2ms on a
16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per word. The I/O pins
serve as the ports for address and data input/output as well as command input. The on-chip write control automates all program and
erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive
systems can take advantage of the K9F28XXX0C′s extended reliability of 100K program/erase cycles by providing ECC(Error Cor-
recting Code) with real time mapping-out algorithm.
The K9F28XXX0C is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
2
K9F2808Q0C-BCB0,BIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-BCB0,BIB0
K9F2816Q0C-BCB0,BIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-BCB0,BIB0
K9F2808U0C-VCB0,VIB0
Advance
FLASH MEMORY
PIN CONFIGURATION (TSOP1)
K9F28XXU0C-YCB0/YIB0
X16
N.C
N.C
N.C
N.C
N.C
GND
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
X8
N.C
N.C
N.C
N.C
N.C
GND
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
X8
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
X16
Vss
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
N.C
N.C
Vcc
N.C
N.C
N.C
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
Vss
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
0.10
MAX
0.004
#48
( 0.25 )
0.010
12.40
0.488 MAX
0.50
0.0197
#24
#25
1.00
±0.05
0.039
±0.002
0.25
0.010 TYP
18.40
±0.10
0.724
±0.004
+0.075
20.00
±0.20
0.787
±0.008
0.008
-0.001
+0.07
+0.003
0.20
-0.03
#1
12.00
0.472
0.05
0.002 MIN
0.125
0.035
0~8
¡Æ
0.45~0.75
0.018~0.030
( 0.50 )
0.020
3
0.005
-0.001
+0.003
1.20
0.047MAX
K9F2808Q0C-BCB0,BIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-BCB0,BIB0
K9F2816Q0C-BCB0,BIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-BCB0,BIB0
K9F2808U0C-VCB0,VIB0
Advance
FLASH MEMORY
PIN CONFIGURATION (TBGA)
K9F28XXX0C-BCB0/BIB0
X8
1
2
3
4
5
6
1
2
X16
3
4
5
6
A
/WP
ALE
/RE
NC
NC
NC
I/O0
I/O1
I/O2
NC /CE
CLE NC
NC
NC
NC
NC
NC
NC
NC
NC
/WE
NC
NC
NC
NC
NC
I/O5
I/O6
R/B
A
/WP
ALE
/RE
NC
NC
NC
Vss
CLE
NC
NC
NC
/CE
NC
NC
NC
I/O5
/WE
NC
NC
NC
I/O7
R/B
NC
NC
NC
NC
Vcc
I/O15
Vss
B
NC
NC
B
NC
C
NC
NC
C
NC
D
NC
NC
D
NC
E
NC
NC
E
NC
F
NC
Vcc
F
I/O8
I/O1 I/O10 I/O12 IO14
I/O9
I/O3 VccQ I/O6
G
NC
NC VccQ
I/O3 I/O4
I/O7
G
I/O0
H
Vss
Vss
H
Vss
I/O2 I/O11 I/O4 I/O13
Top View
Top View
PACKAGE DIMENSIONS
48-Ball TBGA (measured in millimeters)
Top View
Bottom View
6.00
±0.10
0.80 x5= 4.00
6.00
±0.10
0.80
(Datum A)
A
6
A
5
4
3
2
1
Ball #A1
(Datum B)
B
0.80
C
D
E
2.80
F
G
H
0.80 x7= 5.60
8.50
±0.10
48-∅0.45
±0.05
0.20
M
A B
2.00
Side View
0.90
±0.10
0.35
±0.05
0.45
±0.05
0.08MAX
6.00
±0.10
4
8.50
±0.10
B
K9F2808Q0C-BCB0,BIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-BCB0,BIB0
K9F2816Q0C-BCB0,BIB0
K9F2816U0C-YCB0,YIB0
K9F2816U0C-BCB0,BIB0
K9F2808U0C-VCB0,VIB0
Advance
FLASH MEMORY
PIN CONFIGURATION (WSOP1)
K9F2808U0C-VCB0/VIB0
N.C
N.C
DNU
N.C
N.C
N.C
R/B
RE
CE
DNU
N.C
Vcc
Vss
N.C
DNU
CLE
ALE
WE
WP
N.C
N.C
DNU
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
DNU
N.C
I/O7
I/O6
I/O5
I/O4
N.C
DNU
N.C
Vcc
Vss
N.C
DNU
N.C
I/O3
I/O2
I/O1
I/O0
N.C
DNU
N.C
N.C
PACKAGE DIMENSIONS
48-PIN LEAD PLASTIC VERY VERY THIN SMALL OUT-LINE PACKAGE TYPE (I)
48 - WSOP1 - 1217F
Unit :mm
0.70 MAX
15.40
±0.10
0.58
±0.04
#1
+0.07
-0.03
#48
+0.07
-0.03
0.16
12.00
±0.10
0.50TYP
(0.50
±
0.06)
0.20
#24
#25
0~0.08
(0.1Max)
0.10
+0.075
-0.035
0
°
°
~8
0.45~0.75
17.00
±0.20
5
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参数对比
与K9F2808Q0C-BIB0相近的元器件有:K9F2816Q0C-BCB0、K9F2816Q0C-BIB0、K9F2808Q0C-BCB0、K9F2816U0C-BCB0、K9F2816U0C-BIB0。描述及对比如下:
型号 K9F2808Q0C-BIB0 K9F2816Q0C-BCB0 K9F2816Q0C-BIB0 K9F2808Q0C-BCB0 K9F2816U0C-BCB0 K9F2816U0C-BIB0
描述 Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 Flash, 16MX8, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 Flash, 8MX16, 30ns, PBGA48, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48
厂商名称 SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)
零件包装代码 BGA BGA BGA BGA BGA BGA
包装说明 VFBGA, 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48 6 X 8.50 MM, 0.80 MM PITCH, TBGA-48
针数 48 48 48 48 48 48
Reach Compliance Code compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A 3A991.B.1.A
最长访问时间 30 ns 30 ns 30 ns 30 ns 30 ns 30 ns
其他特性 CONTAINS ADDITIONAL 4M BIT NAND FLASH CONTAINS ADDITIONAL 4M BIT NAND FLASH CONTAINS ADDITIONAL 4M BIT NAND FLASH CONTAINS ADDITIONAL 4M BIT NAND FLASH CONTAINS ADDITIONAL 4M BIT NAND FLASH CONTAINS ADDITIONAL 4M BIT NAND FLASH
JESD-30 代码 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48 R-PBGA-B48
长度 8.5 mm 8.5 mm 8.5 mm 8.5 mm 8.5 mm 8.5 mm
内存密度 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit 134217728 bit
内存集成电路类型 FLASH FLASH FLASH FLASH FLASH FLASH
内存宽度 8 16 16 8 16 16
功能数量 1 1 1 1 1 1
端子数量 48 48 48 48 48 48
字数 16777216 words 8388608 words 8388608 words 16777216 words 8388608 words 8388608 words
字数代码 16000000 8000000 8000000 16000000 8000000 8000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 85 °C 70 °C 85 °C 70 °C 70 °C 85 °C
组织 16MX8 8MX16 8MX16 16MX8 8MX16 8MX16
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VFBGA VFBGA VFBGA VFBGA VFBGA VFBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
编程电压 1.8 V 1.8 V 1.8 V 1.8 V 2.7 V 2.7 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
最大供电电压 (Vsup) 1.95 V 1.95 V 1.95 V 1.95 V 3.6 V 3.6 V
最小供电电压 (Vsup) 1.65 V 1.65 V 1.65 V 1.65 V 2.7 V 2.7 V
标称供电电压 (Vsup) 1.8 V 1.8 V 1.8 V 1.8 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 INDUSTRIAL COMMERCIAL INDUSTRIAL COMMERCIAL COMMERCIAL INDUSTRIAL
端子形式 BALL BALL BALL BALL BALL BALL
端子节距 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm 0.8 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
类型 SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE SLC NAND TYPE
宽度 6 mm 6 mm 6 mm 6 mm 6 mm 6 mm
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器件捷径:
00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W
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