K9F5608R0D
K9F5608U0D K9F5608B0D
FLASH MEMORY
K9F5608X0D
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.
1
K9F5608R0D
K9F5608U0D K9F5608B0D
FLASH MEMORY
Document Title
32M x 8 Bit NAND Flash Memory
Revision History
Revision No. History
0.0
0.1
0.2
1.0
1.1
1.2
1. LOCKPRE pin mode is eliminated
1. 2.65V -> 2.7V Part Changed.
2. Leaded package devices are deleted.
Initial issue
1. Leaded package devices are eliminated
Draft Date
May 16th. 2005
Aug. 11th. 2005
Oct. 17th. 2005
Oct. 30th. 2005
Dec. 30th 2005
May. 23th 2006
Remark
Advance
Advance
Preliminary
Final
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
2
K9F5608R0D
K9F5608U0D K9F5608B0D
FLASH MEMORY
32M x 8 Bit NAND Flash Memory
PRODUCT LIST
Part Number
K9F5608R0D-J
K9F5608B0D-P
K9F5608B0D-J
K9F5608U0D-P
K9F5608U0D-J
K9F5608U0D-F
2.7 ~ 3.6V
Vcc Range
1.65 ~ 1.95V
2.5 ~ 2.9V
X8
Organization
PKG Type
FBGA
TSOP1
FBGA
TSOP1
FBGA
WSOP1
FEATURES
•
Voltage Supply
- 1.8V device(K9F5608R0D) : 1.65~1.95V
- 2.7V device(K9F5608B0D) : 2.5~2.9V
- 3.3V device(K9F5608U0D) : 2.7 ~ 3.6 V
•
Organization
- Memory Cell Array
-(32M + 1024K)bit x 8 bit
- Data Register
- (512 + 16)bit x 8bit
•
Automatic Program and Erase
- Page Program
-(512 + 16)Byte
- Block Erase :
- (16K + 512)Byte
•
Page Read Operation
- Page Size
- (512 + 16)Byte
- Random Access
: 15µs(Max.)
- Serial Page Access : 50ns(Min.)
•
Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
•
Command/Address/Data Multiplexed I/O Port
•
Hardware Data Protection
- Program/Erase Lockout During Power Transitions
•
Reliable CMOS Floating-Gate Technology
- Endurance
: 100K Program/Erase Cycles
- Data Retention : 10 Years
•
Command Register Operation
•
Intelligent Copy-Back
•
Unique ID for Copyright Protection
•
Package
- K9F5608B(U)0D-PCB0/PIB0
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package
- K9F5608X0D-JCB0/JIB0
63- Ball FBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)
- Pb-free Package
- K9F5608U0D-FCB0/FIB0
48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package
* K9F5608U0D-F(WSOPI ) is the same device as
K9F5608U0D-P(TSOP1) except package type.
GENERAL DESCRIPTION
Offered in 32Mx8bit , the K9F5608X0D is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.7V, 3.3V Vcc. Its
NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed
in typical 200µs on a 528-byte page and an erase operation can be performed in typical 2ms on a 16K-byte block. Data in the page
can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command
input. The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal
verification and margining of data. Even the write-intensive systems can take advantage of the K9F5608X0D′s extended reliability of
100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.
The K9F5608X0D is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable
applications requiring non-volatility.
3
K9F5608R0D
K9F5608U0D K9F5608B0D
PIN CONFIGURATION (TSOP1)
K9F5608B(U)0D-PCB0/PIB0
N.C
N.C
N.C
N.C
N.C
N.C
R/B
RE
CE
N.C
N.C
Vcc
Vss
N.C
N.C
CLE
ALE
WE
WP
N.C
N.C
N.C
N.C
N.C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
FLASH MEMORY
PACKAGE DIMENSIONS
48-PIN LEAD/LEAD FREE PLASTIC THIN SMALL OUT-LINE PACKAGE TYPE(I)
48 - TSOP1 - 1220F
Unit :mm/Inch
0.10
MAX
0.004
#48
( 0.25 )
0.010
12.40
0.488 MAX
#24
#25
1.00
±0.05
0.039
±0.002
0.25
0.010 TYP
+0.075
20.00
±0.20
0.787
±0.008
0.20
-0.03
+0.07
#1
0.008
-0.001
0.16
-0.03
+0.07
+0.003
0.50
0.0197
12.00
0.472
0.05
0.002 MIN
0.125
0.035
0~8°
0.45~0.75
0.018~0.030
( 0.50 )
0.020
4
0.005
-0.001
+0.003
18.40
±0.10
0.724
±0.004
1.20
0.047MAX
K9F5608R0D
K9F5608U0D K9F5608B0D
PIN CONFIGURATION (FBGA)
K9F5608X0D-JCB0/JIB0
Top View
1
N.C N.C
FLASH MEMORY
2
3
4
5
6
N.C N.C
N.C N.C
A
B
C
N.C
/WP
NC
NC
NC
NC
NC
NC
Vss
ALE
/RE
NC
NC
NC
I/O0
I/O1
I/O2
Vss
CLE
NC
NC
NC
NC
NC
/CE
NC
NC
NC
NC
NC
/WE
NC
NC
NC
NC
NC
R/B
NC
NC
NC
NC
Vcc
I/O7
Vss
D
E
F
G
H
VccQ I/O5
I/O6
I/O3 I/O4
N.C N.C
N.C N.C
N.C N.C
N.C N.C
PACKAGE DIMENSIONS
63-Ball FBGA (measured in millimeters)
Top View
Bottom View
9.00
±0.10
0.80 x 9= 7.20
0.80 x 5= 4.00
9.00
±0.10
(Datum A)
A
6
5
0.80
4
3
2
1
B
#A1
A
B
0.80 x11= 8.80
0.80 x7= 5.60
2.00
0.25(Min.)
0.45
±0.05
(Datum B)
C
D
E
0.80
11.00
±0.10
2.80
F
G
H
63-∅0.45
±0.05
∅
0.20
M
A B
Side View
9.00
±0.10
0.10MAX
5
1.00(Max.)
11.00
±0.10
