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KA1H0165RN

Power Switch ICs - Power Distribution

器件类别:电源/电源管理    电源电路   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

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器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
Fairchild
Objectid
1475445600
零件包装代码
DIP
包装说明
DIP, DIP8,.3
针数
8
Reach Compliance Code
unknown
ECCN代码
EAR99
compound_id
4118736
模拟集成电路 - 其他类型
SWITCHING REGULATOR
控制模式
CURRENT-MODE
控制技术
PULSE WIDTH MODULATION
最大输入电压
30 V
最小输入电压
11 V
标称输入电压
14 V
JESD-30 代码
R-PDIP-T8
JESD-609代码
e0
长度
9.2 mm
功能数量
1
端子数量
8
最高工作温度
85 °C
最低工作温度
-25 °C
最大输出电流
4 A
封装主体材料
PLASTIC/EPOXY
封装代码
DIP
封装等效代码
DIP8,.3
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT SPECIFIED
认证状态
Not Qualified
座面最大高度
5.08 mm
表面贴装
NO
切换器配置
SINGLE
最大切换频率
100 kHz
温度等级
OTHER
端子面层
Tin/Lead (Sn/Pb)
端子形式
THROUGH-HOLE
端子节距
2.54 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
7.62 mm
文档预览
Is Now Part of
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www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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www.fairchildsemi.com
KA1H0165RN/KA1H0165R
Fairchild Power Switch(FPS)
Features
Precision Fixed Operating Frequency (100kHz)
Pulse by Pulse Over Current Limiting
Over Load Protection
Over Voltage Protection (Min. 23V)
Internal Thermal Shutdown Function
Under Voltage Lockout
Internal High Voltage Sense FET
Auto Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM
controller IC. PWM controller features integrated fixed
oscillator, under voltage lock out, leading edge blanking,
optimized gate turn-on/turn-off driver, thermal shut down
protection, over voltage protection, temperature compensated
precision current sources for loop compensation and fault
protection circuit compared to discrete MOSFET and
controller or R
CC
switching converter solution The Fairchild
Power Switch(FPS) can reduce total component count,
design size, weight and at the same time increase &
efficiency, productivity, and system reliability. It has a basic
platform well suited for cost effective design in either a
flyback converter or a forward converter.
8-DIP
TO-220F-4L
1
1.6.7.8. Drain
2. GND
3. VCC
4. F/B
5. S/S
1
1. GND
2. Drain
3. VCC
4. F/B
Internal Block Diagram
V
CC
32V
5V
Vref
Good
logic
Internal
bias
DRAIN
SFET
*
Soft Start
5V
OSC
S
R
Q
5µA
1mA 2.5R
1R
9V
+
7.5V
+
25V
Thermal S/D
OVER VOLTAGE S/D
+
FB
L.E.B
0.1V
S
R
Q
GND
Power on reset
* KA1H0165RN
Rev.1.0.3
©2003 Fairchild Semiconductor Corporation
KA1H0165RN/KA1H0165R
Absolute Maximum Ratings
Parameter
Maximum Drain Voltage
(1)
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-Source (GND) Voltage
Drain Current Pulsed
(2)
Single Pulsed Avalanche Energy
(3)
Continuous Drain Current (T
C
=25°C)
Continuous Drain Current (T
C
=100°C)
Maximum Supply Voltage
Input Voltage Range
Total Power Dissipation
Operating Ambient Temperature
Storage Temperature
Symbol
V
D,MAX
V
DGR
V
GS
I
DM
E
AS
I
D
I
D
V
CC,MAX
V
FB
P
D
Darting
T
A
T
STG
Value
650
650
±30
4.0
95
1.0
0.7
30
-0.3 to V
SD
40
0.32
-25 to +85
-55 to +150
Unit
V
V
V
A
DC
mJ
A
DC
A
DC
V
V
W
W/°C
°C
°C
Notes:
1. T
j
= 25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L = 80mH, V
DD
= 50V, R
G
= 27Ω, starting T
j
= 25°C
2
KA1H0165RN/KA1H0165R
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Symbol
BV
DSS
Condition
V
GS
=0V, I
D
=50µA
V
DS
=Max., Rating,
V
GS
=0V
V
DS
=0.8Max., Rating,
V
GS
=0V, T
C
=125°C
V
GS
=10V, I
D
=0.5A
V
DS
=50V, I
D
=0.5A
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=0.5B V
DSS
, I
D
=1.0A
(MOSFET switching
time is essentially
independent of
operating temperature)
V
GS
=10V, I
D
=1.0A,
V
DS
=0.5B V
DSS
(MOSFET
switching time is essentially
independent of operating
temperature)
Min.
650
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
Typ. Max. Unit
-
-
-
8
-
250
25
10
12
4
30
10
-
3
9
-
50
200
10
-
-
-
-
-
-
-
-
21
-
-
nC
nS
pF
V
µA
µA
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance
(Note)
Forward Transconductance
(Note)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain (Miller) Charge
Note:
1. Pulse test: Pulse width
300µS, duty cycle
2%
1
-
2. S
= ---
R
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
Qg
Qgs
Qgd
S
3
KA1H0165RN/KA1H0165R
Electrical Characteristics (Control Part)
(Continued)
(Ta=25°C unless otherwise specified)
Parameter
UVLO SECTION
Start Threshold Voltage
Stop Threshold Voltage
OSCILLATOR SECTION
Initial Accuracy
Frequency Change With Temperature
(2)
Maximum Duty Cycle
FEEDBACK SECTION
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
SOFT START SECTION (KA1H0165RN)
Soft Start Voltage
Soft Start Current
REFERENCE SECTION
Output Voltage
(1)
Temperature Stability
(1)(2)
Peak Current Limit
PROTECTION SECTION
Thermal Shutdown Temperature
(1)
Over Voltage Protection Voltage
TOTAL DEVICE SECTION
Start-Up Current
Operating Supply Current
(Control Part Only)
V
CC
Zener Voltage
I
START
I
OP
V
Z
V
CC
=14V
Ta=25°C
I
CC
=20mA
0.1
6
30
0.3
12
32.5
0.4
18
35
mA
mA
V
T
SD
V
OVP
-
-
140
23
160
25
-
28
°C
V
Vref
Vref/∆T
I
OVER
Ta=25°C
-25°C
Ta
+85°C
Max. inductor current
4.80
-
0.53
5.00
0.3
0.6
5.20
0.6
0.67
V
mV/°C
A
V
SS
I
SS
V
FB
=2V
Sync & S/S=GND
4.7
0.8
5.0
1.0
5.3
1.2
V
mA
I
FB
V
SD
Idelay
Ta=25°C, 0V
Vfb
3V
-
Ta=25°C, 5V
Vfb
V
SD
0.7
6.9
4.0
0.9
7.5
5.0
1.1
8.1
6.0
mA
V
µA
F
OSC
∆F/∆T
Dmax
Ta=25°C
-25°C
Ta
+85°C
-
90
-
64
100
±5
67
110
±10
70
kHz
%
%
V
START
V
STOP
-
After turn on
14
9
15
10
16
11
V
V
Symbol
Condition
Min.
Typ.
Max.
Unit
CURRENT LIMIT(SELF-PROTECTION)SECTION
Note:
1. These parameters, although guaranteed, are not 100% tested in production
2. These parameters, although guaranteed, are tested in EDS (wafer test) process
4
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参数对比
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