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KBJ2501

25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:Chenda

厂商官网:http://www.szchenda.com

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KBJ25005 THRU KBJ2510
SILICON BRIDGE RECTIFIERS
Reverse Voltage - 50 to 1000 Volts
? .134(3.4)
? .122(3.1)
Forward Current - 25.0 Amperes
GBJ
1.193(30.3)
1.169(29.7)
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.198 MAX
(5.1)
.800(20.3)
.776(19.7)
? .134(3.4)
? .122(3.1)
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
The plastic material has U/L flammability
.118(3.0)*45°
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
.106(2.7)
.096(2.3)
+
~ ~ _
.441(11.2)
.425(10.8)
.114(2.9)
.098(2.5)
classification 94V-0
.402(10.2) .303(7.7).303(7.7)
SPACING
.386(9.8) .287(7.3).287(7.3)
.031(0.8)
.023(0.6)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum Average Forward (with heatsink Note 2)
Rectified Current @ T
C
=100℃ (without heatsink)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per birdge element at 12.5A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=125 C
SYMBOLS
KBJ
25005
KBJ
2501
KBJ
2502
KBJ
2504
KBJ
2506
KBJ
2508
KBJ
2510
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
25.0
4.2
350
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
1.0
10
0.5
508
85
0.6
-55 to +150
-55 to +150
Volts
µ
A
mA
It Rating for Fusing (t<8.3ms)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating junction temperature range
storage temperature range
I
2
t
C
J
R
θ
JC
T
J
T
STG
A
2
s
pF
C/W
C
C
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.
3.The typical data above is for reference only(典型值仅供参考).
RATINGS AND CHARACTERISTIC CURVES KBJ25005 THRU KBJ2510
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
PEAK FORWARD SURGE CURRENT ,
AMPERES
WITH HEATSINK
FIG.2-MAXMUN NON-REPETITIVE
SURGE CURRENT
350
300
250
200
150
100
50
0
1
2
T
J
=25°C
SINGLE -SINE- WAVE
(JEDEC METHOD)
20
15
10
WITHOUT HEATSINK
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
5
0
0
20
40
60
80
100
120
140
CASE TEMPERATURE, °C
10
20
50
5
NUMBER OF CYCLES AT 60Hz
100
FIG.4-TYPICAL FORWARD CHARACTERISTICS
FIG.3-TYPICAL JUNCTION CAPACITANCE
1000
INSTANTANEOUS FORWARD CURRENT, (A)
100
CAPACITANCE,(pF)
100
10
10
1.0
T
J
=25°C,f=1MH
Z
T
J
= 25°C
PULSE WIDTH 300us
1.0
1.0
10.0
REVERSE VOLTAGE,(VOLTS)
100
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT ,(uA)
100
T
J
=125°C
T
J
=100°C
10
T
J
=50°C
1.0
T
J
=25°C
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
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参数对比
与KBJ2501相近的元器件有:KBJ25005、KBJ2502、KBJ2504、KBJ2506、KBJ2508、KBJ2510。描述及对比如下:
型号 KBJ2501 KBJ25005 KBJ2502 KBJ2504 KBJ2506 KBJ2508 KBJ2510
描述 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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