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KBJ4G

2.4 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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KBJ4A-KBJ4M
Silicon Bridge Rectifiers
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
KBJ4
Features
Rating to 1000V PRV
15± 0.3
4.7± 0.2
25± 0.3
3.7± 0.2
φ
3.2±
Surge overload rating to
150
Am peres peak
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique res ults in inexpens ive product
Lead s olderable per MIL-STD-202 m ethod 208
4.6± 0.15
0.15
1.2± 0.2
2.8± 0.2
0.7± 0.1
Mechanical Data
Polarity:Sym bols m olded on body
Weight:0.16
ounces, 4.45 grams
Mounting pos ition: Any
7.5± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
KBJ
4A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard
Output current
@T
A
=100
KBJ
4B
100
70
100
KBJ
4D
200
140
200
KBJ
4G
400
280
400
4.0
KBJ
4J
600
420
600
KBJ
4K
800
560
800
KBJ
4M
1000
700
1000
17.5± 0.5
1.1± 0.2
9.5± 0.2
UNITS
V
V
V
A
V
RR M
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
150.0
A
V
F
I
R
C
J
R
θJC
T
J
T
STG
1.0
10.0
1.0
45
2.2
- 55 ---- + 150
- 55 ---- + 150
V
μA
mA
pF
/W
Typical junction capacitance per element
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTES:1.Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC
2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.
http://www.luguang.cn
mail:lge@luguang.cn
KBJ4A-KBJ4M
Silicon Bridge Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
FIG.2 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT,
5
250
4
200
AMPERES
8.3ms Single Half Sine Wave
T
J
=150
3
150
2
100
1
50
0
0
50
100
150
0
1
10
100
NUMBER OF CYCLES AT 60H
Z
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
200
INSTANTANEOUS FORWARD CURRENT,
AMPERES
JUNCTION CAPACITANCE,pF
160
140
10
2
1.0
120
100
50
40
20
1
.1
TJ=25
f=1MHz
0.1
.2
.4
1.0
2
4
10
20
40
100
.01
.2
.4
.6
.8
1.0
1.2
1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
REVERSE VOLTAGE,VOLTS
http://www.luguang.cn
mail:lge@luguang.cn
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参数对比
与KBJ4G相近的元器件有:KBJ4A、KBJ4B、KBJ4D、KBJ4J、KBJ4K、KBJ4M。描述及对比如下:
型号 KBJ4G KBJ4A KBJ4B KBJ4D KBJ4J KBJ4K KBJ4M
描述 2.4 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2.4 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
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