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KBJ6M

2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:BILIN

厂商官网:http://www.galaxycn.com/

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FEATURES
GALAXY ELECTRICAL
KBJ6A --- KBJ6M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 6.0 A
SILICON BRIDGE RECT IFIERS
Rating to 1000V PRV
Surge overload rating to
150
Am peres peak
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique res ults in inexpens ive product
Lead s olderable per MIL-STD-202 m ethod 208
KBJ
Glass passivated chip junctions
MECHANCAL DATA
Polarity:Sym bols m olded on body
Weight:0.23 ounces , 6.6 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
KBJ
6A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard
Output current
@T
A
=110
KBJ
6B
100
70
100
KBJ
6D
200
140
200
KBJ
6G
400
280
400
6.0
KBJ
6J
600
420
600
KBJ
6K
800
560
800
KBJ
6M
1000
700
1000
UNITS
V
V
V
A
V
RR M
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous f orw ard voltage
at 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
150.0
A
V
F
I
R
C
J
R
θJC
T
J
T
STG
1.0
10.0
1.0
55
1.8
- 55 ---- + 150
- 55 ---- + 150
V
μA
mA
pF
/W
Typical junction capacitance per element
Typical thermal resistance
Operating junction temperature range
Storage temperature range
NOTES:1.Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC
2.Dev ice mounted on 300mm X 300mm X 1.6mm cu Plate heatsink.
www.galaxycn.com
Document Number 0287067
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT CURRENT,
AMPERES
KBJ6A --- KBJ6M
FIG.2 -- FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT,
250
10
200
8
8.3ms Single Half Sine Wave
T
J
=125
AMPERES
150
6
100
4
50
2
0
1
0
10
100
0
50
100
150
NUMBER OF CYCLES AT 60H
Z
AMBIENT TEMPERATURE,
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
100
200
INSTANTANEOUS FORWARD CURRENT,
AMPERES
JUNCTION CAPACITANCE,pF
160
140
10
3
1.0
120
100
50
40
20
1
.1
0.1
T
J
=25
f=1M z
H
.2
.4
1.0
2
4
10
20
40
10
.01
.2
.4
.6
.8
1.0
1.2
1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0287067
BL
GALAXY ELECTRICAL
2.
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参数对比
与KBJ6M相近的元器件有:KBJ6D、KBJ6B、KBJ6A、KBJ6G、KBJ6K、KBJ6J。描述及对比如下:
型号 KBJ6M KBJ6D KBJ6B KBJ6A KBJ6G KBJ6K KBJ6J
描述 2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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