KBP200 - KBP210
PRV : 50 - 1000 Volts
Io : 2.0 Amperes
FEATURES :
*
*
*
*
*
*
High case dielectric strength
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Ideal for printed circuit board
SILICON BRIDGE RECTIFIERS
KBP
0.71 (18.0)
0.63 (16.0)
0.825 (20.95)
0.605 (15.36)
+
AC AC
0.035 (0.89)
0.028 (0.71)
0.500 (12.7)
MIN.
0.16 (4.00)
0.14 (3.55)
0.276 (7.01 )
0.236 (5.99)
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 3.4 grams
0.105 (2.66)
0.085 (2.16)
Dimensions in inches and ( millimeter )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50
°
C
Peak Forward Surge Current, Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing
( t < 8.3 ms. )
Ta = 25
°
C
Ta = 100
°
C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
KBP
200
50
35
50
KBP
201
100
70
100
KBP
202
200
140
200
KBP
204
400
280
400
2.0
KBP
206
600
420
600
KBP
208
800
560
800
KBP
210
1000
700
1000
UNIT
Volts
Volts
Volts
Amps.
I
FSM
60
10
1.0
10
1.0
24
30
- 50 to + 125
- 50 to + 125
Amps.
A
2
S
Volts
I
2
t
V
F
I
R
I
R(H)
Maximum Forward Voltage per Diode at I
F
= 1.0 Amp.
Maximum DC Reverse Current
at Rated DC Blocking Voltage
µ
A
mA
pF
Typical Junction Capacitance per Diode (Note 1)
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Notes :
C
J
RθJA
T
J
T
STG
°
C/W
°
C
°
C
1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
2 ) Thermal resistance from Junction to Ambient with units mounted on a 0.47" X 0.47" ( 12mm X 12mm ) Cu. Pads.
UPDATE : MARCH 6, 2000
RATING AND CHARACTERISTIC CURVES ( KBP200 - KBP210 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
2.0
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
80
70
60
T
J
= 55
°
C
50
40
30
20
10
0
1
2
4
6
10
20
40
60
100
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
1.5
60 Hz, Resistive or
inductive load.
1.0
0.5
P.C. Board Mounted with
0.47" X 0.47" ( 12mm X 12mm )
Cu. pads.
0
25
50
75
100
125
150
175
0
CASE TEMPERATURE, (
°C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
Pulse Width = 300
µs
1 % Duty Cycle
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
REVERSE CURRENT, MICROAMPERES
10
T
J
= 100
°
C
FORWARD CURRENT, AMPERES
10
1.0
1.0
0.1
T
J
= 25
°
C
T
J
= 25
°
C
0.1
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Microchip MCU
