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KBU4K

4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:SEMTECH_ELEC

厂商官网:http://www.semtech.net.cn

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KBU4A THRU KBU4M
SINGLE – PHASE BRIDGE RECTIFIERS
Reverse Voltage – 50 to 1000 Volts
Forward Current – 4.0 Amperes
Features
Ideal for printed circuit board.
Reliable low cost construction utilizing molded plastic
technique
Plastic material has Underwriters Laboratory Flammability
Classification 94V-0.
Surge overload rating:200 amperes peak.
Mounting Position: Any
Absolute Maximum Ratings and Characteristics
Ratings at 25 Cambient temperature unless otherwise specified. Resistive or inductive load , 60Hz, For capacitive load, derate current by 20%
.
o
Symbols
Maximum repetitive peak reverse voltage
Maximum RMS bridge input voltage
Maximum DC blocking voltage
Maximum average forward rectified output current
at T
C
= 100
O
C, T
A
= 65
O
C/ 40
O
C/ 45
O
C
Peak forward surge current 8.3mS single half
sine-wave superimposed on rated load
(MIL-STD-750 method 4066)
Maximum instantanous forward voltage drop per
element at 3.0A/3.0A/8.0A
Maximum DC reverse leakage at rated T
A
= 25
O
C
DC blocking voltage per element
T
C
= 100
O
C
Operating and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
KBU
4A
50
35
50
KBU
4B
100
70
100
KBU
4D
200
140
200
KBU
4G
400
280
400
4
4
KBU
4J
600
420
600
KBU
4K
800
560
800
KBU
4M
1000
700
1000
Units
V
V
V
A
I
FSM
V
F
I
R
T
J
,T
S
200
1
10
100
-65 to +150
A
V
µA
mA
O
C
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Semtech International Holdings Limited, acompany
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 11/11/2002
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参数对比
与KBU4K相近的元器件有:KBU4B、KBU4A、KBU4G、KBU4D、KBU4M、KBU4J。描述及对比如下:
型号 KBU4K KBU4B KBU4A KBU4G KBU4D KBU4M KBU4J
描述 4 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, SILICON, BRIDGE RECTIFIER DIODE 4 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 2.8 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 4 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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