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KD60GB80

Rectifier Diode, 60A, 800V V(RRM),

器件类别:分立半导体    二极管   

厂商名称:SanRex

厂商官网:http://www.ecomallbiz.com/sanrex

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DIODE MODULE
DD(KD)60GB40/80
UL;E76102 M)
Power Diode Module
DD60GB
series are designed for various rectifier circuits.
DD60GB
has two diode chips connected in series and the mounting base is elctrically
isolated from elements for simple heatsink construction. Wide voltage rating up to, 800V
is avaiable for various input voltage.
26MAX
93.5MAX
80
3
2
+
1
2- 6.5
Isolated
mounting base
Two elements in a package for simple (single and three phase) bridge
connections
Highly reliable glass passivated chips
High surge current capability
(Applications)
Various rectifiers, Battery chargers, DC motor drives
13
~
16.5
23
23
3M5
KD
21
30MAX
DD
Unit:a
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
F AV)
I
F (RMS)
I
FSM
I
2
t
Tj
Tstg
V
ISO
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Average Forward Current
R.M.S. Forward Current
Surge Forward Current
I
2
t
Junction Temperature
Storage Temperature
Isolation Voltage
Mounting
Torque
Mass
Mounting
(M6)
Terminal
(M5)
A.C.1minute
Recommended Value 2.5-3.9(25-40)
Recommended Value 1.5-2.5(15-25)
Ratings
DD60GB40
400
480
Conditions
(Tj=25℃
unless otherwise specified)
DD60GB80
800
960
Ratings
60
95
1100/1200
6000
−40
to
+150
−40
to
+125
2500
4.7(48)
2.7(28)
170
Unit
V
V
Unit
A
A
A
A
2
S
V
N½m
(㎏f½B)
g
Single phase, half wave, 180°
conduction, Tc:114℃
Single phase, half wave, 180°
conduction, Tc:114℃
1
cycle,
2
50/60H
Z
, peak value, non-repetitive
Value for one cycle of surge current
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current, max.
Forward Voltage Drop, max.
Conditions
at V
DRM
, single phase, half wave. Tj=150℃
Foward current 180A,Tj=25℃,Inst. measurement
Junction to case
Ratings
20
1.25
0.50
Unit
mA
V
℃/W
Rth j-c) Thermal Impedance, max.
50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
DD(KD)60GB40/80
Maximum Forward Characteristics
Power Dissipation Pav W)
10
10
Average Forward Current vs.
Power Dissipation
Per one element
Forward Current
(A)
D.C.
Max.
Single Phase
Three Phase
1
06
08
10
12
14
16
18
20
22
10
10
10
10
Forward Voltage Drop
(V)
Average Forward Current
(A)
Allowable Case Temperature Tc
(℃)
10
10
Average Forward Current vs.
Allowable Case Temperature
10
20
Cycle Surge Forward Current Rating
(Non-Repetitive)
Per one element
T= 5
½2 ℃ start
Per one element
10
10
10
10
Three Phase
Surge Forward Current
(A)
10
00
80
60Hz
60
50Hz
40
20
Single Phase
D.C.
10
10
Average Forward Current
(A)
Transient Thermal Impedance
θ
(℃/W)
j-c
Time
(Cycles)
Transient Thermal Impedance
06
05
04
03
02
01
5 1
Junction to Case
Per one element
Maximum
−3
5 1
−2
Time
t
sec)
5 1
−1
5 1
Allowable Case Temperature
(℃)
Total Power Dissipation
(W)
Total Power Dissipation
(W)
Id Aav.)
50
40
30
20
Rth:0.8C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
B6
50
40
Id Aav.)
Rth:0.8C/W
Rth:0.4C/W
Rth:0.3C/W
Rth:0.2C/W
Rth:0.1C/W
10
10
10
B6
10
B2
30
20
10
10
10
7 10 15 10
5 0
2 5
10
10
10
10
5 10 10 20
0 0
10
7 10 15 10
5 0 2 5
5 10 10 20
0 0 5 0
Output Current
(A)
Ambient Temperature
(℃)
Output Current
(A) Ambient Temperature
(℃)
SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
Allowable Case Temperature
(℃)
60
Output Current
B;
2 Two Pluse Bridge
connection
60
Output Current
B ; pulse Bridge
6 Six
connection
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参数对比
与KD60GB80相近的元器件有:KD60GB40。描述及对比如下:
型号 KD60GB80 KD60GB40
描述 Rectifier Diode, 60A, 800V V(RRM), Rectifier Diode, 60A, 400V V(RRM),
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