SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small package : VSC.
Low forward voltage.
Fast reverse recovery time.
Small total capacitance.
B
A
2
KDS160V
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK
1
D
C
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
SYMBOL
V
RM
V
R
I
FM
I
O
I
FSM
P
D
*
T
j
T
stg
RATING
85
80
300
100
2
100
150
-55 150
UNIT
V
F
E
DIM
A
B
C
D
E
F
MILLIMETERS
_
1.4
+
0.05
_
1.0
+
0.05
_
0.6
+
0.05
_
0.28
+
0.03
_
0.05
0.5
+
_
0.12
+
0.03
Maximum (Peak) Reverse Voltage
Reverse Voltage
Maximum (Peak) Forward Current
Average Forward Current
Surge Current (10mS)
Power Dissipation
Junction Temperature
Storage Temperature Range
V
mA
mA
A
mW
1. ANODE
2. CATHODE
VSC
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
Marking
Type Name
UF
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
V
F(1)
Forward Voltage
V
F(2)
V
F(3)
Reverse Current
Total Capacitance
Reverse Recovery Time
I
R
C
T
t
rr
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=80V
V
R
=0V, f=1MHz
I
F
=10mA
TEST CONDITION
MIN.
-
-
-
-
-
-
TYP.
0.60
0.72
0.90
-
0.9
1.6
MAX.
-
-
1.20
0.5
3.0
4.0
A
pF
nS
V
UNIT
2005. 12. 29
Revision No : 0
1/2
KDS160V
I
F
- V
F
FORWARD CURRENT I
F
(mA)
REVERSE CURRENT I
R
(µA)
10
10
10
Ta
=2
5
=-2
C
5
C
3
I
R
- V
R
10
Ta=100 C
Ta=75 C
2
1
C
10
0
10
-1
Ta
1
10
10
-1
Ta
=
Ta=50 C
-2
10
Ta=25 C
-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10
-3
0
20
40
60
80
FORWARD VOLTAGE V
F
(V)
REVERSE VOLTAGE V
R
(V)
C
T
- V
R
TOTAL CAPACITANCE C
T
(pF)
2.0
1.6
1.2
0.8
0.4
0
t
rr
- I
F
REVERSE RECOVERY TIME t
rr
(ns)
f=1MHz
Ta=25 C
100
50
30
Ta=25 C
Fig. 1
10
5
3
1
0.5
0.1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
REVERSE VOLTAGE V
R
(R)
FORWARD CURRENT I
F
(mA)
Fig. 1. REVERSE RECOVERY TIME(t
rr
) TEST CIRCUIT
INPUT
WAVEFORM
0
INPUT
0.01µF
DUT
OUTPUT
SAMPLING
OSCILLOSCOPE
(R
IN
=50Ω)
I
F
=10mA
0
I
R
WAVEFORM
0.1 I
R
50Ω
2kΩ
-6V
50ns
E
t
rr
PULSE GENERATOR
(R
OUT
=50Ω)
2005. 12. 29
Revision No : 0
50Ω
2/2
