E2Q0012-38-71
¡ electronic components
This version: Jul. 1998
Previous version: Jan. 1998
KGF1155B/1155
¡
electronic components
KGF1155B/1155
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1155B is a small-signal UHF-band amplifier that features low noise and low current
operation. The KGF1155B specifications are guaranteed to a fixed matching circuit of 5 V and
850 MHz; external impedance-matching circuits are also required. Because of the dual gate
configuration, low noise, and low operating current, the KGF1155B is ideal as a receiver mixer
for personal handy phones.
The KGF1155 is an amplifier similar to the KGF1155B in specifications and typical properties.
Although having S Parameters slightly different from those of the KGF1155B, the KGF1155
meets the specifications for the KGF1155B, even with the same matching circuits as those of the
KGF1155B.
FEATURES
• Low current operation: 2.5 mA (max.)
• High output power: 3 dBm (min.)
• Low noise: 3 dB (max.)
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
0.6
+0.1
–0.05
0.4
+0.1
–0.05
1.1±0.15
0.36 0.74
3.0±0.2
1.5±0.15
0.3 MIN
0 to 0.15
Package material
1.9±0.1
2.8±0.15
Lead frame material
0.125
+0.03
–0
Epoxy resin
42 alloy
Solder plating
5
mm
or more
Pin treatment
Solder plate thickness
(Unit: mm)
Note: Ask our sales department for detailed requirements of the KGF1155.
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KGF1155B/1155
MARKING
(4)
(3)
M X X
(1)
(2)
NUMERICAL
NUMERICAL
PRODUCT TYPE
LOT
NUMBER
(1) Gate1
(2) Gate2
(3) Drain
(4) GND
CIRCUIT
G(2)
G(1)
D(3)
GND(4)
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KGF1155B/1155
ABSOLUTE MAXIMUM RATINGS
Item
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DS
V
GS
I
DS
P
tot
T
ch
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = 25°C
—
—
Unit
V
V
mA
mW
°C
°C
Min.
—
–3.0
—
—
—
–45
Max.
7.0
0.4
60
200
150
125
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Gate-source leakage current
Gate-drain leakage current
Drain-source leakage current
Operating current
Gate-source cut-off voltage
Noise figure
Linear gain
Output power
Third-order intercept point
Symbol
I
GSS
I
GDO
I
DS(off)
I
D
V
GS(off)
F
G
LIN
P
O
IP
3
Condition
V
GS(1,2)
= –3 V
V
GD(1,2)
= –8 V
V
DS
= 3 V, V
GS(1,2)
= –2.5 V
(*1), P
IN
= –20 dBm
V
DS
= 3 V, I
DS
= 120
mA
(*1)
(*1), P
IN
= –20 dBm
(*2), P
IN
= –3 dBm
(*1), f
2
= 851 MHz
Unit
mA
mA
mA
mA
V
dB
dB
dBm
dBm
Min.
—
—
—
—
–2.0
—
12.0
3.0
—
Typ.
—
—
—
—
—
—
—
—
11
Max.
12
60
120
2.5
–1.0
3.0
—
—
—
*1 Self-bias condition: V
DD
= 5.0 V±0.25 V, V
G1
= 0 V, V
G2
= 1.0 V, f = 850 MHz
*2 Self-bias condition: V
DD
= 5.0 V±0.25 V, V
G1
= 0 V, V
G2
= 1.5 V, f = 850 MHz
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RF CHARACTERISTICS
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KGF1155B/1155
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模拟电子