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KGF1191

描述:
RF/Microwave Amplifier, GAAS
分类:
文件大小:
183KB,共13页
制造商:
概述
RF/Microwave Amplifier, GAAS
器件参数
参数名称
属性值
厂商名称
LAPIS Semiconductor Co Ltd
包装说明
TO-253
Reach Compliance Code
unknown
安装特点
SURFACE MOUNT
端子数量
4
封装主体材料
PLASTIC/EPOXY
封装等效代码
TO-253
电源
3 V
最大压摆率
5 mA
表面贴装
YES
技术
GAAS
文档预览
E2Q0016-38-71
¡ electronic components
This version: Jul. 1998
Previous version: Jan. 1998
KGF1191
¡
electronic components
KGF1191
Small-Signal Amplifier
GENERAL DESCRIPTION
The KGF1191 is a two-stage small-signal amplifier, with frequencies ranging from the UHF-band
to the L-band, that features low voltage operation, low current operation, high gain, and high
isolation. The KGF1191 specifications are guaranteed to a fixed matching circuit for 3 V and 850
MHz; external impedance-matching circuits are also required. Because of the high gain and high
isolation at 3 V, the KGF1191 is ideal as an intermediate-stage amplifier for portable phones.
FEATURES
• Low voltage and low current: 3 V, 5 mA (max.)
• Specifications guaranteed to a fixed matching circuit for 3 V and 850 MHz
• High linear gain: 24 dB (typ.)
• High isolation: –35 dB (typ.)
• Self-bias circuit configuration with built-in source capacitor
• Package: 4PSOP
PACKAGE DIMENSIONS
1.8±0.1
0.85±0.05
0.6
+0.1
–0.05
0.4
+0.1
–0.05
1.1±0.15
0.36 0.74
3.0±0.2
1.5±0.15
0.3 MIN
0 to 0.15
Package material
1.9±0.1
2.8±0.15
Lead frame material
0.125
+0.03
–0
Epoxy resin
42 alloy
Solder plating
5
mm
or more
Pin treatment
Solder plate thickness
(Unit: mm)
1/13
¡ electronic components
KGF1191
MARKING
(4)
(3)
K X X
(1)
(2)
NUMERICAL
NUMERICAL
PRODUCT TYPE
LOT
NUMBER
(1) IN
(2) V
D1
(3) OUT
(4) GND
CIRCUIT
V
D1
(2)
OUT (3)
IN (1)
GND (4)
2/13
¡ electronic components
KGF1191
ABSOLUTE MAXIMUM RATINGS
Item
Supply voltage
Gate voltage
Total power dissipation
Channel temperature
Storage temperature
Symbol
V
DD
V
G
P
tot
T
ch
T
stg
Condition
Ta = 25°C
Ta = 25°C
Ta = 25°C
Unit
V
V
mW
°C
°C
Min.
–3.0
–45
Max.
7
0.4
200
150
125
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Operating current
Noise figure
Symbol
I
D
F
Condition
(*1), P
IN
= –13 dBm
f = 850 MHz
(*1)
f = 1.5 GHz
f = 1.9 GHz
Linear gain
G
LIN
(*1), P
IN
=
–30 dBm
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
Output power
P
O
(*1), P
IN
=
–13 dBm
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
Isolation
ISO
(*1), P
IN
=
–20 dBm
f = 850 MHz
f = 1.5 GHz
f = 1.9 GHz
dB
dBm
dB
dB
Unit
mA
Min.
18.0
0
Typ.
4.0
4.5
5.0
24.0
19.0
15.0
3.0
1.5
0
–35.0
–30.0
–30.0
Max.
5.0
5.0
*1 Self-bias condition: V
DD
= 3±0.3 V, V
G
= 0 V
3/13
¡ electronic components
KGF1191
RF CHARACTERISTICS
4/13
¡ electronic components
KGF1191
5/13
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