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KGF2511

描述:
RF/Microwave Amplifier, 1 Func
分类:
文件大小:
92KB,共7页
制造商:
概述
RF/Microwave Amplifier, 1 Func
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
LAPIS Semiconductor Co Ltd
包装说明
TSOP6,.11,37
Reach Compliance Code
unknown
JESD-609代码
e0
安装特点
SURFACE MOUNT
功能数量
1
端子数量
6
最高工作温度
85 °C
最低工作温度
-35 °C
封装主体材料
PLASTIC/EPOXY
封装等效代码
TSOP6,.11,37
电源
2.8 V
最大压摆率
28 mA
表面贴装
YES
端子面层
Tin/Lead (Sn/Pb)
文档预览
E2Q0056-18-X2
¡ electronic components
This version: Oct. 1998
Previous version:
KGF2511
¡
electronic components
KGF2511
Medium Power Amplifier for UHF band
GENERAL DESCRIPTION
The KGF2511 is a medium power amplifier for UHF band that features high output power, high
linear gain, low distortion and low-current dissipation. The KGF2511 has specifications guaran-
teed by fixed matching circuit of 2.8V and 900MHz band, although external impedance matching
circuits are required. Because of the high output power and low distortion at the low operating
current, the KGF2511 is ideal as a transmitter driver stage amplifier for portable phones such as
PDC and CDMA.
FEATURES
• High output power: 8dBm (min)
• High linear gain: 27dB (min)
• Low distortion (ACP): –55dBc (max) @P
O
=8dBm,
p/4DQPSK,
±50kHz
• Low voltage and low current operation: 2.8V, 28mA (max)
• Self-bias circuit configuration with built-in source capacitor
• Surface mount 6-pin SOP plastic package
OUTLINE DIMENSIONS
2.9±0.2
0.4±0.1
1.1±0.1
0.8±0.1
0.2 min
2.8
–0.3
+0.2
1.6
–0.1
+0.2
0 ~ 0.15
0.95
1.9±0.2
0.95
0.15
–0.05
(Unit: mm)
+0.1
1/6
¡ electronic components
KGF2511
MARKING
(6)
(5)
(4)
C1XX
(1)
(2)
(3)
(4)
(5)
(6)
IN
GND
NC
V
DD2
/ OUT
GND
V
DD1
(1)
(2)
(3)
LOT NUMBER
(NUMBER)
PRODUCT TYPE
CIRCUIT
V
DD1
(6)
(1)
IN
(4)
V
DD2
/ OUT
(3)
NC
(2), (5)
GND
2/6
¡ electronic components
KGF2511
ABSOLUTE MAXIMUM RATINGS
Item
Supply Voltage
Total power dissipation
Operating temperature
Storage temperature
Symbol
V
DD
P
TOT
T
OPE
T
STG
Conditions
Ta = 25°C
Ta = 25°C
Unit
V
mW
°C
°C
Min.
–35
–45
Max.
7
300
+85
+125
ELECTRICAL CHARACTERISTICS
(Ta = 25°C)
Item
Frequency
Operating current
Linear Gain
Output Power
Adjacent channel power 1
Adjacent channel power 2
Symbol
f
I
DD
G
LIN
P
O
ACP1
ACP2
Conditions
(*1), P
IN
= –20 dBm
(*1), P
IN
= –30 dBm
(*1), P
IN
= –20 dBm
(*1), P
O
= 8 dBm
±50 kHz offset
(*1), P
O
= 8 dBm
±100 kHz offset
Unit
MHz
mA
dB
dBm
dBc
dBc
Min.
889
27
8
Typ.
24
30
10
–60
–70
Max.
960
28
–55
–65
*1 Self-bias condition: V
DD
= 2.8 V,
p/4
DQPSK
3/6
¡ electronic components
KGF2511
P
O
and I
D
vs. P
IN
20
V
DD
= 2.8V
f = 950MHz
10
Output Power P
O
(dBm)
KGF2511
100
80
Operating Current I
D
(mA)
0
60
–10
40
–20
20
–30
–60
–50
–40
–30
–20
–10
0
0
Input Power P
IN
(dBm)
KGF2511
ACP vs. P
O
–30
V
DD
= 2.8V
f = 950MHz,
p/4
DQPSK
–40
ACP (dBc)
–50
–60
ACP50kHz
–70
ACP100kHz
–80
4
6
8
10
12
14
Output Power P
O
(dBm)
4/6
¡ electronic components
KGF2511
KGF2511
P
O
and ACP vs. P
IN
at three temperatures
20
15
10
Output Power P
O
(dBm)
0
V
DD
= 2.8V
f = 950MHz,
p/4
DQPSK,
Df=±50kHz
–35°C
+25°C
+85°C
–20
–30
–40
–50
–35°C
–60
–70
–80
–30
–25
–20
Input Power P
IN
(dBm)
–15
–10
ACP 50kHz (dBc)
–10
2
0
–5
–10
+85°C
–15
–20
+25°C
5/6
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