SEMICONDUCTOR
TECHNICAL DATA
General Description
KEC Field Stop Trench IGBTs offer low switching losses, high energy
efficiency and short circuit ruggedness.
It is designed for applications such as motor control, uninterrupted power
supplies(UPS), general inverters.
KGF25N120KDA
FEATURES
・High
speed switching
・High
ruggedness, temperature stable behavior
・Short
Circuit Withstand Times
≻10us
・Extremely
enhanced avalanche capability
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Junction Temperature
Storage Temperature Range
@Tc=25
℃
@Tc=100
℃
@Tc=100
℃
@Tc=25
℃
@Tc=100
℃
SYMBOL
V
CES
V
GES
I
C
25
I
CM
*
I
F
I
FM
P
D
91
T
j
T
stg
150
-55 to + 150
W
℃
℃
75
25
75
227
A
A
A
A
W
RATING
1200
±20
50
UNIT
V
V
A
*Repetitive rating : Pulse width limited by max. junction temperature
THERMAL CHARACTERISTIC
CHARACTERISTIC
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (DIODE)
Thermal Resistance, Junction to Ambient
SYMBOL
R
t h JC
R
t h JC
R
t h JA
MAX.
0.55
1.7
40
UNIT
℃/W
℃/W
℃/W
G
E
C
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KGF25N120KDA
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
CHARACTERISTIC
Static
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
BV
CES
I
CES
I
GES
V
GE(th)
V
GE
=0V , I
C
=1mA
V
GE
=0V, V
CE
=1200V
V
CE
=0V, V
GE
=±20V
V
GE
=V
CE,
I
C
=25mA
V
GE
=15V, I
C
=25A
Collector-Emitter Saturation Voltage
V
CE(sat)
V
GE
=15V, I
C
=25A, T
C
= 125℃
V
GE
=15V, I
C
=50A
Dynamic
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Input Capacitance
Ouput Capacitance
Reverse Transfer Capacitance
Short Circuit Withstand Time
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
C
ies
C
oes
C
res
t
sc
V
CC
=600V, V
GE
=15V, T
C
=100℃
V
CE
=30V, V
GE
=0V, f=1MHz
V
CC
=600V, I
C
=25A, V
GE
=15V, R
G
=10Ω
Inductive Load, T
C
= 125℃
-
-
-
-
-
-
10
2.0
1.6
3.6
2650
115
70
-
-
-
-
3450
-
-
-
mJ
mJ
mJ
pF
pF
pF
μ
s
V
CC
=600V, I
C
=25A, V
GE
=15V,R
G
=10Ω
Inductive Load, T
C
= 25℃
-
-
-
-
-
-
-
1.85
0.9
2.75
40
30
180
190
2.4
1.2
3.6
-
-
-
-
mJ
mJ
mJ
ns
ns
ns
ns
V
CC
=600V, V
GE
=15V, I
C
= 25A
-
-
-
-
-
-
-
160
25
80
40
25
175
85
-
-
-
-
-
-
-
nC
nC
nC
ns
ns
ns
ns
1200
-
-
4.5
-
-
-
-
-
-
5.5
2.0
2.25
2.6
-
1.0
±100
7.0
2.4
-
-
V
mA
nA
V
V
V
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Marking
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Revision No : 0
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KGF25N120KDA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC
Diode Forward Voltage
SYMBOL
V
F
I
F
= 25A
TEST CONDITION
T
C
=25℃
T
C
=125℃
Diode Reverse Recovery Time
t
rr
I
F
= 25A
di/dt = 200A/μ
s
Diode Reverse Recovery Charge
Q
rr
T
C
=125℃
-
1.65
-
T
C
=25℃
T
C
=125℃
Diode Peak Reverse Recovery Current
I
rr
T
C
=25℃
T
C
=125℃
T
C
=25℃
MIN.
-
-
-
-
-
-
-
TYP.
2.4
2.5
140
180
13.5
16.0
1.05
MAX.
3.0
V
-
-
ns
-
-
A
-
-
C
UNIT
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KGF25N120KDA
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KGF25N120KDA
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