Electronic Components
KGF2755
Wide-Band Amplifier
ODRKGF2755-07
Issue Date:Jan 20, 2006
GENERAL DESCRIPTION
The KGF2755, housed in a 6-pin HSON plastic package, is a two-stage
amplifier that features high output power, flat and high linear gain over a
wide range of frequencies, internal input and output matching, and high
third-order intercept point. The internally matched 50 input and output
eliminate external impedance-matching circuit. The KGF2755 is ideal as a
medium-power amplifier in the 100 to 3000MHz frequencies.
FEATURES
•
•
•
•
•
•
Flat gain property from 100MHz to 3000MHz
Input and output 50 matched impedance
High linear gain > 22.5dB
High output power > 22dBm
High third order intercept point > 30dBm
Package: HSON-6P
FUNCTION DIAGRAM
Output/V
D2
GND
(6)
(5)
V
D1
(4)
(1)
V
GG
(2)
GND
(3)
Input
1
ODRKGF2755-07
Electronic Components
KGF2755
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Gate Voltage
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
V
DD
V
GG
P
IN
P
TOT
T
CH
T
STG
Condition
Ta=25°C
Ta=25°C
Ta=25°C
Ta=Tc=25°C
—
—
Min
—
-4
—
—
—
-45
Max
8
0.5
3
1
150
125
Unit
V
V
dBm
W
°C
°C
Note
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Operating Current
Gate Voltage
Operating Temperature
Input Interface
Output Interface
Symbol
V
DD
I
Idle
V
GG
Ta
Condition
Ta=25°C
Ta=25°C
Ta=25°C
—
Min
—
—
0.1
- 30
Typ
5.8
100
—
—
Max
—
—
0.4
85
Unit
V
mA
V
°C
Require external DC block capacitor
ELECTRICAL CHARACTERISTICS
(Ta=25°C)
Max
Unit
3.0
GHz
180
mA
—
dB
3.0
dB
-5.0
dB
- 12.5
dB
—
dBm
—
dBm
—
°C/W
Parameter
Frequency
Operating Current
Linear Gain
Gain flatness
Input Return Loss
Output Return Loss
Output Power
Third-order Intercept Point
Thermal Resistant
Symbol
f
I
DD
G
LIN
G
S
11
S
22
P
O1
IP
3
R
TH
Min
Typ
(*1)
0.1
—
(*1), P
IN
=0dBm
—
175
22.5
23.5
(*1)
—
—
f = 0.1GHz
—
- 8.0
f = 1.0GHz
—
- 15.5
f = 2.0GHz
22
23
f = 3.0GHz
30
32
Channel to Case
—
75
(*1): V
DD
(V
D1
, V
D2
)=5.8V, I
Idle
=100mA
Condition
2
ODRKGF2755-07
Electronic Components
KGF2755
TYPICAL CHARACTERISTICS
V
DD
=5.8V, I
Idle
=100mA
S parameter
40
50
P
O
, IM
3
and I
DD
vs. P
IN
P
O
, IM
3
(dBm)
Linear Gain S
21
P
O
(dB)
Output Power (dB)
S
21
S
11
S
22
(dB)
30
20
10
0
-10
-20
-30
25
0
-25
300
P
o
IM
3
I
DD
P
O1
=23.9dBm
IP
3
=34.3dBm
G
LIN
=27.0dB
-40
-30
-20
-10
0
10
20
250
200
150
100
50
Output Power
S
11
-50
-75
-100
S
22
-40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency
f (GHz)
Input Power
P
IN
(dBm)
P
O1
and IP
3
vs. Frequency
50
WCDMA ACPR vs. P
IN
-10
-20
f=2100MHz
Single Carrier, BW=3.84MHz
40
IP
3
P
O1
, IP
3
(dBm)
30
ACPR (dBc)
-30
5MHz offset
-40
-50
-60
20
P
o1
10
10MHz offset
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-70
-40
-30
-20
-10
0
10
20
Frequency
f (GHz)
Output Power
P
IN
(dBm)
Noise Figure vs. Frequency
10.0
30
Noise Figure F (dB)
8.0
G
a
25
6.0
20
4.0
15
F
2.0
10
0.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
5
Frequency
f (GHz)
Gain G
a
(dB)
Operating Current I
DD
(mA)
f
1
=2000MHz
f
2
=2001MHz
350
Return Loss
3
ODRKGF2755-07
Electronic Components
KGF2755
TYPICAL CHARACTERISTICS
V
DD
=5.8V, I
Idle
=100mA
Linear Gain S
21
vs. V
GG
40
40
30
S Parameter and I
DD
vs. V
GG
f=2100MHz
400
350
300
250
200
Linear Gain S
21
(dB)
30
S Parameter (dB)
V
GG
=0.30V
S
21
20
10
0
-10
-20
-30
-40
20
0.15V
0.10V
S
11
S
22
I
DD
-0.1
0.0
0.1
0.2
0.3
0.4
150
100
50
0
10
0.05V
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Frequency
f (GHz)
Gate Voltage V
GG
(V)
S
22
vs. Temperature
40
30
S
11
vs. Temperature
40
30
20
S
11
(dB)
0
-10
-20
-30
-40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
S
22
(dB)
10
-40°C
25°C
20
10
0
25°C
-10
-20
-40°C
85°C
-30
-40
0.0
1.0
2.0
85°C
3.0
4.0
5.0
6.0
Frequency
f (GHz)
Frequency
f (GHz)
S
21
vs. Temperature
40
30
20
28
30
S
21
vs. Temperature
S
21
(dB)
S
21
(dB)
10
0
-10
-20
-30
-40
0.0
1.0
2.0
3.0
4.0
5.0
6.0
26
-40°C
25°C
85°C
24
22
500MHz
1000MHz
1500MHz
2000MHz
2500MHz
3000MHz
20
-50
-25
0
25
50
75
100
Frequency
f (GHz)
Temperature T (°C)
Operating Current I
DD
(mA)
4
ODRKGF2755-07
Electronic Components
KGF2755
TYPICAL CHARACTERISTICS
V
DD
=5.8V, I
Idle
=100mA
Ga, P
O1
, IP
3
, I
DD
vs. Temperature
50
Ga, P
O1
, IP
3
, I
DD
vs. Temperature
300
50
f=500MHz
f=1000MHz
300
Operating Current I
DD
(mA)
40
IP
3
Ga
P
O1
250
40
IP
3
250
30
200
30
Ga
P
O1
200
20
150
20
150
10
100
10
100
I
DD
0
-50
-25
0
25
50
75
100
50
I
DD
0
-50
-25
0
25
50
75
100
50
Temperature T (°C)
Ga, P
O1
, IP
3
, I
DD
vs. Temperature
50
Temperature T (°C)
Ga, P
O1
, IP
3
, I
DD
vs. Temperature
300
50
f=2000MHz
f=3000MHz
300
Operating Current I
DD
(mA)
40
250
40
250
IP
3
30
IP
3
30
Ga
200
Ga
P
O1
200
20
P
O1
150
20
150
10
100
10
100
I
DD
0
-50
-25
0
25
50
75
100
50
I
DD
0
-50
-25
0
25
50
75
100
50
Temperature T (°C)
Temperature T (°C)
Operating Current I
DD
(mA)
Gain (dB), P
O1
, IP
3
(dBm)
Gain (dB), P
O1
, IP
3
(dBm)
Operating Current I
DD
(mA)
Gain (dB), P
O1
, IP
3
(dBm)
Gain (dB), P
O1
, IP
3
(dBm)
5
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