SMD Type
P-Channel 40-V (D-S) MOSFET
KI2319DS
Transistors
IC
SOT-23
Unit: mm
Features
TrenchFET Power MOSFET
+0.1
2.4
-0.1
+0.1
2.9
-0.1
+0.1
0.4
-0.1
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1. Gate
2.Emitter
2. Source
0-0.1
3. Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
=150 ) * 1 T
A
=25
------------------------------------------------T
A
=70
Pulsed Drain Current *2
Continuous Source Current (diode conduction) *1
Power Dissipation *1
T
A
=25
-------------------------------------------------T
A
=70
Jumction Temperature
Storage Temperature
* 1 Surface Mounted on FR4 Board.t
5 sec.
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
j
T
stg
-1.0
1.25
0.8
150
-55 to +150
-3.0
-2.4
-12
-0.62
0.75
0.48
5 sec
Steady State
-40
20
-2.3
-1.85
Unit
V
V
A
A
A
W
*2 Pulse width limited by maximum junction temperature.
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient *1
Maximum Junction-to-Ambient *2
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
5 sec.
R
thJF
Symbol
R
thJA
Typical
75
120
40
Maximum
100
166
50
/W
Unit
* 1. Surface Mounted on FR4 Board, t
* 2. Surface Mounted on FR4 Board.
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1
SMD Type
KI2319DS
Electrical Characteristics Ta = 25
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance *
Forward Transconductance *
Diode Forward Voltage *
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Symbol
Testconditons
Transistors
IC
Min
-40
-1.0
Typ
Max
Unit
V
V
(BR)DSS
V
GS
= 0 V, I
D
= -250 A
V
GS(th)
I
GSS
I
DSS
I
D(on)
r
DS(on)
g
fs
V
SD
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DD
= -20V , R
L
=20 ,
I
D
= -1A , V
GEN
=- 4.5V , R
G
= 6
V
DS
= -20V ,V
GS
= 0 , f = 1 MHz
V
DS
= -20V ,V
GS
= -10 V , I
D
= -3 A
V
DS
= V
GS
, I
D
= -250 ìA
V
DS
= 0 V, V
GS
=
20 V
-3.0
100
-1
-10
nA
A
A
0.065 0.082
0.10
7
-0.8
11.3
1.7
3.3
470
85
65
7
15
25
25
15
25
40
40
ns
pF
-1.2
17
nC
0.130
S
V
V
DS
= -40 V, V
GS
= 0 V
V
DS
= -40 V, V
GS
= 0 V, T
J
= 55
V
DS
-5 V, V
GS
= -10V
-6
V
GS
= -10 V, I
D
= -3.0 A
V
GS
= -4.5 V, I
D
= -2.4 A
V
DS
= -5 V, I
D
= -3.0 A
I
S
= -1.25 A, V
GS
= 0 V
Turn-Off Time
* Pulse test: PW
300 ìs duty cycle
2%.
t
d(off)
t
f
Marking
Marking
C9
2
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