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KM48C8004CS-6

EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32

器件类别：存储    存储   

厂商名称：SAMSUNG(三星)

厂商官网：http://www.samsung.com/Products/Semiconductor/

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参数 预览 参数对比
器件参数
参数名称
属性值
是否Rohs认证
不符合
厂商名称
SAMSUNG(三星)
零件包装代码
TSOP2
包装说明
TSOP2, TSOP32,.46
针数
32
Reach Compliance Code
unknown
ECCN代码
EAR99
访问模式
FAST PAGE WITH EDO
最长访问时间
60 ns
其他特性
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型
COMMON
JESD-30 代码
R-PDSO-G32
JESD-609代码
e0
长度
20.95 mm
内存密度
67108864 bit
内存集成电路类型
EDO DRAM
内存宽度
8
功能数量
1
端口数量
1
端子数量
32
字数
8388608 words
字数代码
8000000
工作模式
ASYNCHRONOUS
最高工作温度
70 °C
最低工作温度
组织
8MX8
输出特性
3-STATE
封装主体材料
PLASTIC/EPOXY
封装代码
TSOP2
封装等效代码
TSOP32,.46
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）
NOT SPECIFIED
电源
5 V
认证状态
Not Qualified
刷新周期
8192
座面最大高度
1.2 mm
自我刷新
NO
最大待机电流
0.001 A
最大压摆率
0.11 mA
最大供电电压 (Vsup)
5.5 V
最小供电电压 (Vsup)
4.5 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
技术
CMOS
温度等级
COMMERCIAL
端子面层
Tin/Lead (Sn/Pb)
端子形式
GULL WING
端子节距
1.27 mm
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
10.16 mm
文档预览
KM48C8004C, KM48C8104C
CMOS DRAM
8M x 8bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 8,388,608 x 8 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random
access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6), package type (SOJ or TSOP-II)
are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities.
This 8Mx8 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power con-
sumption and high reliability.
FEATURES
• Part Identification
- KM48C8004C(5.0V, 8K Ref.)
- KM48C8104C(5.0V, 4K Ref.)
•
Active Power Dissipation
Unit : mW
Speed
-5
-6
•
Refresh Cycles
Part
NO.
KM48C8004C*
KM48C8104C
Refresh
cycle
8K
4K
Refresh time
Normal
64ms
RAS
CAS
W
• Extended Data Out Mode operation
• CAS-before-RAS refresh capability
• RAS-only and Hidden refresh capability
• Fast parallel test mode capability
• TTL(5.0V) compatible inputs and outputs
• Early Write or output enable controlled write
• JEDEC Standard pinout
• Available in Plastic SOJ and TSOP(II) packages
• +5.0V±10% power supply
4K
660
605
8K
495
440
FUNCTIONAL BLOCK DIAGRAM
Control
Clocks
Vcc
Vss
VBB Generator
Refresh Control
Refresh Counter
Memory Array
8,388,608 x 8
Cells
Sense Amps & I/O
* Access mode & RAS only refresh mode
: 8K cycle/64ms
CAS-before-RAS & Hidden refresh mode
: 4K cycle/64ms
•
Performance Range
Speed
-5
-6
Refresh Timer
Row Decoder
Data in
Buffer
DQ0
to
DQ7
Data out
Buffer
OE
t
RAC
50ns
60ns
t
CAC
13ns
15ns
t
RC
84ns
104ns
t
HPC
20ns
25ns
A0~A12
(A0~A11)*1
A0~A9
(A0~A10)*1
Row Address Buffer
Col. Address Buffer
Column Decoder
Note) *1 : 4K Refresh
SAMSUNG ELECTRONICS CO., LTD.
reserves the right to
change products and specifications without notice.
KM48C8004C, KM48C8104C
CMOS DRAM
PIN CONFIGURATION
(Top Views)
• KM48V80(1)04CS
• KM48V80(1)04CK
V
CC
DQ0
DQ1
DQ2
DQ3
N.C
V
CC
W
RAS
A0
A1
A2
A3
A4
A5
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
SS
DQ7
DQ6
DQ5
DQ4
V
SS
CAS
OE
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
V
CC
DQ0
DQ1
DQ2
DQ3
N.C
V
CC
W
RAS
A0
A1
A2
A3
A4
A5
V
CC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
SS
DQ7
DQ6
DQ5
DQ4
V
SS
CAS
OE
A12(N.C)*
A11
A10
A9
A8
A7
A6
V
SS
(K : 400mil SOJ)
(S : 400mil TSOP(II))
* (N.C) : N.C for 4K Refresh product
Pin Name
A0 - A12
A0 - A11
DQ0 - 7
V
SS
RAS
CAS
W
OE
V
CC
N.C
Pin Function
Address Inputs(8K Product)
Address Inputs(4K Product)
Data In/Out
Ground
Row Address Strobe
Column Address Strobe
Read/Write Input
Data Output Enable
Power(+5.0V)
No Connection
KM48C8004C, KM48C8104C
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to V
SS
Voltage on V
CC
supply relative to V
SS
Storage Temperature
Power Dissipation
Short Circuit Output Current
Symbol
V
IN,
V
OUT
V
CC
Tstg
P
D
I
OS
Address
Rating
-1.0 to +7.0
-1.0 to +7.0
-55 to +150
1
50
CMOS DRAM
Units
V
V
°C
W
mA
* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to
the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(Voltage referenced to Vss, T
A
= 0 to 70°C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.6
-1.0
*2
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1.0
*1
0.7
Units
V
V
V
V
*1 : V
CC
+2.0V at pulse width≤20ns which is measured at V
CC
*2 : -2.0 at pulse width≤20ns which is measured at V
SS
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions unless otherwise noted.)
Parameter
Input Leakage Current (Any input 0≤V
IN
≤V
CC
+0.5V,
all other pins not under test=0 Volt)
Output Leakage Current
(Data out is disabled, 0V≤V
OUT
≤V
CC
)
Output High Voltage Level(I
OH
=-5mA)
Output Low Voltage Level(I
OL
=4.2mA)
Symbol
I
I(L)
I
O(L)
V
OH
V
OL
Min
-5
-5
2.4
-
Max
5
5
-
0.4
Units
uA
uA
V
V
KM48C8004C, KM48C8104C
DC AND OPERATING CHARACTERISTICS
(Continued)
Symbol
Power
Speed
KM48C8004C
I
CC1
I
CC2
I
CC3
I
CC4
I
CC5
I
CC6
Don't care
Normal
Don't care
Don't care
Normal
Don't care
-5
-6
Don't care
-5
-6
-5
-6
Don't care
-5
-6
90
80
2
90
80
100
90
1
120
110
Max
KM48C8104C
120
110
2
120
110
110
100
1
120
110
CMOS DRAM
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC1
* : Operating Current (RAS and CAS, Address cycling @
t
RC
=min.)
I
CC2
: Standby Current (RAS=CAS=W=V
IH
)
I
CC3
* : RAS-only Refresh Current (CAS=V
IH
, RAS, Address cycling @
t
RC
=min.)
I
CC4
* : Extended Data Out Mode Current (RAS=V
IL
, CAS, Address cycling @
t
HPC
=min.)
I
CC5
: Standby Current (RAS=CAS=W=V
CC
-0.2V)
I
CC6
* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @
t
RC
=min)
*Note :
I
CC1
, I
CC3
, I
CC4
and I
CC6
are dependent on output loading and cycle rates. Specified values are obtained with the output open.
I
CC
is specified as an average current. In I
CC1
, I
CC3
and I
CC6,
address can be changed maximum once while RAS=V
IL
. In I
CC4
,
address can be changed maximum once within one EDO mode cycle time,
t
HPC
.
KM48C8004C, KM48C8104C
CAPACITANCE
(T
A
=25°C, V
CC
=5.0V, f=1MHz)
Parameter
Input capacitance [A0 ~ A12]
Input capacitance [RAS, CAS, W, OE]
Output capacitance [DQ0 - DQ7]
Symbol
C
IN1
C
IN2
C
DQ
Min
-
-
-
CMOS DRAM
Max
5
7
7
Units
pF
pF
pF
AC CHARACTERISTICS
(0°C
≤
T
A
≤
70°C, See note 1,2)
Test condition : V
CC
=5.0V±10%, Vih/Vil=2.6/0.7V, Voh/Vol=2.0/0.8V
Parameter
Random read or write cycle time
Read-modify-write cycle time
Access time from RAS
Access time from CAS
Access time from column address
CAS to output in Low-Z
Output buffer turn-off delay from CAS
OE to output in Low-Z
Transition time (rise and fall)
RAS precharge time
RAS pulse width
RAS hold time
CAS hold time
CAS pulse width
RAS to CAS delay time
RAS to column address delay time
CAS to RAS precharge time
Row address set-up time
Row address hold time
Column address set-up time
Column address hold time
Column address to RAS lead time
Read command set-up time
Read command hold time referenced to CAS
Read command hold time referenced to RAS
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data set-up time
Symbol
Min
-5
Max
Min
104
138
50
13
25
3
3
3
1
30
50
8
38
8
20
9
5
0
7
0
7
25
0
0
0
7
7
8
7
0
10K
37
25
10K
50
13
3
3
3
1
40
60
10
45
10
20
12
5
0
10
0
10
30
0
0
0
10
10
10
10
0
10K
45
30
10K
50
13
60
15
30
-6
Max
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
9
8
8
4
10
3,4,10
3,4,5
3,10
3
6,14
3
2
Units
Note
t
RC
t
RWC
t
RAC
t
CAC
t
AA
t
CLZ
t
CEZ
t
OLZ
t
T
t
RP
t
RAS
t
RSH
t
CSH
t
CAS
t
RCD
t
RAD
t
CRP
t
ASR
t
RAH
t
ASC
t
CAH
t
RAL
t
RCS
t
RCH
t
RRH
t
WCH
t
WP
t
RWL
t
CWL
t
DS
84
113
查看更多>
参数对比
与KM48C8004CS-6相近的元器件有：KM48C8104CS-5、KM48C8004CK-6、KM48C8104CK-6、KM48C8104CK-5、KM48C8004CS-5、KM48C8004CK-5、KM48C8104CS-6。描述及对比如下：
型号 KM48C8004CS-6 KM48C8104CS-5 KM48C8004CK-6 KM48C8104CK-6 KM48C8104CK-5 KM48C8004CS-5 KM48C8004CK-5 KM48C8104CS-6
描述 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32 EDO DRAM, 8MX8, 50ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32 EDO DRAM, 8MX8, 60ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, TSOP2-32
是否Rohs认证 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
厂商名称 SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星) SAMSUNG(三星)
零件包装代码 TSOP2 TSOP2 SOJ SOJ SOJ TSOP2 SOJ TSOP2
包装说明 TSOP2, TSOP32,.46 TSOP2, TSOP32,.46 SOJ, SOJ32,.44 SOJ, SOJ32,.44 SOJ, SOJ32,.44 TSOP2, TSOP32,.46 SOJ, SOJ32,.44 TSOP2, TSOP32,.46
针数 32 32 32 32 32 32 32 32
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknow
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
访问模式 FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
最长访问时间 60 ns 50 ns 60 ns 60 ns 50 ns 50 ns 50 ns 60 ns
其他特性 RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O 类型 COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 代码 R-PDSO-G32 R-PDSO-G32 R-PDSO-J32 R-PDSO-J32 R-PDSO-J32 R-PDSO-G32 R-PDSO-J32 R-PDSO-G32
JESD-609代码 e0 e0 e0 e0 e0 e0 e0 e0
长度 20.95 mm 20.95 mm 20.96 mm 20.96 mm 20.96 mm 20.95 mm 20.96 mm 20.95 mm
内存密度 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bit 67108864 bi
内存集成电路类型 EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM EDO DRAM
内存宽度 8 8 8 8 8 8 8 8
功能数量 1 1 1 1 1 1 1 1
端口数量 1 1 1 1 1 1 1 1
端子数量 32 32 32 32 32 32 32 32
字数 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words 8388608 words
字数代码 8000000 8000000 8000000 8000000 8000000 8000000 8000000 8000000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
组织 8MX8 8MX8 8MX8 8MX8 8MX8 8MX8 8MX8 8MX8
输出特性 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP2 TSOP2 SOJ SOJ SOJ TSOP2 SOJ TSOP2
封装等效代码 TSOP32,.46 TSOP32,.46 SOJ32,.44 SOJ32,.44 SOJ32,.44 TSOP32,.46 SOJ32,.44 TSOP32,.46
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
电源 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
刷新周期 8192 4096 8192 4096 4096 8192 8192 4096
座面最大高度 1.2 mm 1.2 mm 3.76 mm 3.76 mm 3.76 mm 1.2 mm 3.76 mm 1.2 mm
自我刷新 NO NO NO NO NO NO NO NO
最大待机电流 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A 0.001 A
最大压摆率 0.11 mA 0.12 mA 0.11 mA 0.11 mA 0.12 mA 0.12 mA 0.12 mA 0.11 mA
最大供电电压 (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
最小供电电压 (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
标称供电电压 (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
表面贴装 YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING J BEND J BEND J BEND GULL WING J BEND GULL WING
端子节距 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm 1.27 mm
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm 10.16 mm
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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