SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment.
KMA3D6N20SA
N-Ch Trench MOSFET
L
E
B
L
FEATURES
H
2
A
G
・V
DSS
=20V, I
D
=3.6A
・Drain-Source
ON Resistance
R
DS(ON)
=45mΩ(Max.) @ V
GS
=4.5V
R
DS(ON)
=65mΩ(Max.) @ V
GS
=2.5V
・Super
Hige Dense Cell Design
3
1
Q
P
P
DIM
A
B
C
D
E
G
H
J
K
L
M
N
P
Q
MILLIMETERS
_
2.93 + 0.20
1.30+0.20/-0.15
1.30 MAX
0.40+0.15/-0.05
2.40+0.30/-0.20
1.90
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
7
0.1 MAX
C
N
K
M
SOT-23
MAXIMUM RATING
(Ta=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC
Drain Current
Pulsed
Drain-Source-Diode Forward Current
T
A
=25℃
Drain Power Dissipation
T
A
=70℃
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note : Surface Mounted on FR4 Board, t≤10sec.
T
j
T
stg
R
thJA
I
DP
I
S
P
D
0.8
150
-55½150
100
℃
℃
℃/W
14
1.25
1.25
W
A
SYMBOL
V
DSS
V
GSS
I
D
N-Ch
20
±12
3.6
A
UNIT
V
V
KNC
PIN CONNECTION (TOP VIEW)
D
3
3
2
1
2
1
G
2012. 8. 22
S
Revision No : 2
1/5
J
D
KMA3D6N20SA
ELECTRICAL CHARACTERISTICS
(Ta=25℃)
CHARACTERISTIC
Static
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate Leakage Current
Gate Threshold Voltage
Drain-Source ON Resistance
On-State Drain Current
Forward Transconductance
Dynamic
Input Capaclitance
Ouput Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Source-Drain Diode Ratings
Source-Drain Forward Voltage
V
SDF
*
V
GS
=0V, I
DR
=1.25A
-
0.81
1.2
V
C
iss
C
oss
C
rss
Q
g
*
Q
gs
*
Q
gd
*
t
d(on)
*
t
r
*
t
d(off)
*
t
f
*
V
DD
=10V, V
GS
=4.5V
I
D
=1A, R
G
=6Ω
(NOTE 1)
V
DS
=10V, V
GS
=4.5V, I
D
=3.5A
V
DS
=15V, V
GS
= 0V, f=1MHz,
-
-
-
-
-
-
-
-
-
-
437
87
51
6.6
0.8
1.85
13
19
85
47
-
-
-
-
-
-
-
-
ns
-
-
nC
pF
BV
DSS
I
DSS
I
GSS
V
th
R
DS(ON)
*
V
GS
=2.5V, I
D
=2A
I
D(ON)
*
g
fs
*
V
GS
=4.5V, V
DS
=5V
V
DS
=5V, I
D
=3A
-
10
-
50
-
8
65
-
-
A
S
I
DS
=250μ V
GS
=0V,
A,
V
GS
=0V, V
DS
=16V
V
GS
=±10V, V
DS
=0V
V
DS
=V
GS,
I
D
=250μ
A
V
GS
=4.5V, I
D
=2.5A
20
-
-
0.6
-
-
-
-
0.9
32
-
1
±100
1.5
45
mΩ
V
μ
A
nA
V
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
NOTE 1> * : Pulse Test : Pulse width <300㎲ , Duty cycle < 2%
2012. 8. 22
Revision No : 2
2/5
KMA3D6N20SA
2012. 8. 22
Revision No : 2
3/5
KMA3D6N20SA
2012. 8. 22
Revision No : 2
4/5
KMA3D6N20SA
Fig9. Gate Charge Circuit and Wave Form
VGS
10 V
Schottky
Diode
ID
0.5
VDSS
ID
2.0 mA
V
DS
VGS
Q
Qgs
Qgd
Qg
Fig10. Resistive Load Switching
RL
VDS
90%
0.5 VDSS
6Ω
VDS
10 V
VGS
10%
t
d(on)
t
d(off)
VGS
tr
t
on
t
f
t
off
2012. 8. 22
Revision No : 2
5/5
stm32/stm8
