SMD Type
NPN Transistors
KMBT3904
(MMBT3904)
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
Epitaxial planar die construction
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
60
40
6
0.2
0.2
150
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collecto- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base - emitter saturation voltage
Delay time
Rise time
Storage time
Fall time
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
Ic
BO
Ic
EO
I
EBO
h
FE
Ic= 100 ìA
Ic= 1 mA
I
E
= 10 A
Testconditons
I
E
=0
I
B
=0
I
C
=0
Min
60
40
6
0.1
50
0.1
100
60
0.3
0.95
35
35
200
50
250
MHz
ns
V
V
ns
400
Typ
Max
Unit
V
V
V
A
nA
A
V
CB
= 60 V , I
E
=0
V
CE
= 30 V , V
BE(off)
=3V
V
EB
= 5V , I
C
=0
V
CE
= 1V, I
C
= 10mA
V
CE
= 1V, I
C
= 50mA
V
CE(sat)
I
C
=50 mA, I
B
= 5mA
V
BE(sat)
I
C
= 50 mA, I
B
= 5mA
t
d
t
r
t
s
t
f
f
T
V
CC
=3.0V,V
BE
=-0.5V
I
C
=10mA,I
B1
=-I
B2
=1.0mA
V
CC
=3.0V,I
C
=10mA
I
B1
=-I
B2
=1.0mA
V
CE
= 20V, I
C
= 10mA,f=100MHz
Marking
Marking
1AM
0-0.1
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1
SMD Type
KMBT3904
(MMBT3904)
Typical Characteristics
Transistors
Fig.1 Max Power Dissipation vs
Ambient Temperature
Fig.2 Input and Output Capacitance vs.
Collector-Base Voltage
Fig.3 Typical DC Current Gain vs
Collector Current
Fig.4 Typical Collector-Emitter Saturation Voltage vs.
Collector Current
Fig.5 Typical Base-Emitter Saturation Voltage vs.
Collector Current
2
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