型号
- 型号
- 关键词
DRAM Card, 1MX32, 60ns, MOS
厂商名称：SAMSUNG(三星)
厂商官网：http://www.samsung.com/Products/Semiconductor/
下载文档| 型号 | KMCJ5321000-6 | KMCJ5321000-8 | KMCJ5321000-7 |
|---|---|---|---|
| 描述 | DRAM Card, 1MX32, 60ns, MOS | DRAM Card, 1MX32, 80ns, MOS | DRAM Card, 1MX32, 70ns, MOS |
| 厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
| Reach Compliance Code | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 访问模式 | FAST PAGE | FAST PAGE | FAST PAGE |
| 最长访问时间 | 60 ns | 80 ns | 70 ns |
| 其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
| 备用内存宽度 | 16 | 16 | 16 |
| JESD-30 代码 | X-XXMA-X88 | X-XXMA-X88 | X-XXMA-X88 |
| 内存密度 | 33554432 bit | 33554432 bit | 33554432 bit |
| 内存集成电路类型 | DRAM CARD | DRAM CARD | DRAM CARD |
| 内存宽度 | 32 | 32 | 32 |
| 功能数量 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 |
| 端子数量 | 88 | 88 | 88 |
| 字数 | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C |
| 组织 | 1MX32 | 1MX32 | 1MX32 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形状 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 1024 | 1024 | 1024 |
| 最大供电电压 (Vsup) | 5.25 V | 5.25 V | 5.25 V |
| 最小供电电压 (Vsup) | 4.75 V | 4.75 V | 4.75 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO |
| 技术 | MOS | MOS | MOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子形式 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| 端子位置 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
