KMM381L3313BT
Preliminary
184pin Unbuffered DDR SDRAM MODULE
256MB DDR SDRAM MODULE
(32Mx72(16Mx72*2 bank) based on 16Mx8 DDR SDRAM)
Unbuffered 184pin DIMM
72-bit ECC/Parity
Revision 0.2
Aug. 1999
- -1 -
Rev. 0.2 Aug. 1999
KMM381L3313BT
Revision History
Revision 0 (Aug 1998)
1. First release for internal usage
Preliminary
184pin Unbuffered DDR SDRAM MODULE
Revision 0.1 (May. 1999)
1. Changed die revision from B-die to C-die
2. Changed DC/AC characteristics item from old version
Revision 0.2 (Aug. 1999)
1. Changed die revision from C-die to B-die
2. Modified binning policy
From
To
-Z (133Mhz)
-Z (133Mhz/266Mbps@CL=2)
-8 (125Mhz)
-Y (133Mhz/266Mbps@CL=2.5)
-0 (100Mhz)
-0 (100Mhz/200Mbps@CL=2)
3.Modified the following AC spec values
From.
-Z
tAC
tDQSCK
tDQSQ
tDS/tDH
tCDLR
*1
tPRE
*1
tRPST
*1
tHZQ
*1
*1
To.
-0
+/- 1ns
+/- 1ns
+/- 0.75ns
0.75 ns
-Z
+/- 0.75ns
+/- 0.75ns
+/- 0.5ns
0.5 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/- 0.75ns
-Y
+/- 0.75ns
+/- 0.75ns
+/- 0.5ns
0.5 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/- 0.75ns
-0
+/- 0.8ns
+/- 0.8ns
+/- 0.6ns
0.6 ns
1tCK
0.9/1.1 tCK
0.4/0.6 tCK
+/-0.8ns
+/- 0.75ns
+/- 0.75ns
+/- 0.5ns
0.5 ns
2.5tCK-tDQSS
1tCK +/- 0.75ns
tCK/2 +/- 0.75ns
tCK/2 +/- 0.75ns
2.5tCK-tDQSS
1tCK +/- 1ns
tCK/2 +/- 1ns
tCK/2 +/- 1ns
: Changed description method for the same functionality. This means no difference from the previous version.
4.Changed the following AC parameter symbol From tDQCK To tAC
Output data access time from CK/CK
-0-
Rev. 0.2 Aug. 1999
KMM381L3313BT
Preliminary
184pin Unbuffered DDR SDRAM MODULE
KMM381L3313BT DDR SDRAM 184pin DIMM
32Mx72 DDR SDRAM 184pin DIMM based on 16Mx8
1. GENERAL DESCRIPTION
The Samsung KMM381L3313BT is 32M bit x 72 Double
Data Rate SDRAM high density memory modules based on
first gen. of 128Mb DDR SDRAM respectively. The Samsung
KMM381L3313BT consists of eighteen CMOS 16M x 8 bit with
4banks Double Data Rate SDRAMs in 66pin TSOP-II(400mil)
packages mounted on a 184pin glass-epoxy substrate. Four
0.1uF decoupling capacitors are mounted on the printed circuit
board in parallel for each DDR SDRAM. The KMM381L3313B-
T is Dual In-line Memory Modules and intended for mounting
into 184pin edge connector sockets.
Synchronous design allows precise cycle control with the use
of system clock. Data I/O transactions are possible on both
edges of DQS. Range of operating frequencies, programmable
latencies and burst lengths allow the same device to be useful
for a variety of high bandwidth, high performance memory sys-
tem applications.
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
2. FEATURE
• Performance range
Part No.
KMM
381L3313BT
-G(F)Z
KMM
381L3313BT
-G(F)Y
KMM
381L3313BT
-G(F)0
Max Freq.
133MHz(7.5ns@CL=2)
133MHz(7.5ns@CL=2.5)
100MHz(10ns@CL=2)
SSTL_2
Interface
• Power supply
Vdd: 2.5V
±
0.2V
Power: G - normal, F - Low power
• MRS cycle with address key programs
CAS Latency (Access from column address):2,2.5
Burst length ;2, 4, 8
Data scramble ;Sequential & Interleave
• Serial presence detect with EEPROM
• PCB :
Height 1450 (mil),
double sided component
3. PIN CONFIGURATIONS (Front side/back side)
Pin Front Pin Front Pin
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
VREF
DQ0
VSS
DQ1
DQS0
DQ2
VDD
DQ3
NC
NC
VSS
DQ8
DQ9
DQS1
VDDQ
CK0
/CK0
VSS
DQ10
DQ11
CKE0
VDDQ
DQ16
DQ17
DQS2
VSS
A9
DQ18
A7
VDDQ
DQ19
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
A5
DQ24
VSS
DQ25
DQS3
A4
VDD
DQ26
DQ27
A2
VSS
A1
CB0
CB1
VDD
DQS8
A0
CB2
VSS
CB3
BA1
KEY
DQ32
VDDQ
DQ33
DQS4
DQ34
VSS
BA0
DQ35
DQ40
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
89
90
91
92
Front
VDDQ
/WE
DQ41
/CAS
VSS
DQS5
DQ42
DQ43
VDD
NC
DQ48
DQ49
VSS
/CK2
CK2
VDDQ
DQS6
DQ50
DQ51
VSS
VDDID
DQ56
DQ57
VDD
DQS7
DQ58
DQ59
VSS
WP
SDA
SCL
Pin
93
94
95
96
97
98
99
100
101
102
103
104
105
106
107
108
109
110
111
112
113
114
115
116
117
118
119
120
121
122
123
Back
VSS
DQ4
DQ5
VDDQ
DM0
DQ6
DQ7
VSS
NC
NC
*A13
VDDQ
DQ12
DQ13
DM1
VDD
DQ14
DQ15
CKE1
VDDQ
*BA2
DQ20
*A12
VSS
DQ21
A11
DM2
VDD
DQ22
A8
DQ23
Pin
124
125
126
127
128
129
130
131
132
133
134
135
136
137
138
139
140
141
142
143
144
145
146
147
148
149
150
151
152
153
Back
VSS
A6
DQ28
DQ29
VDDQ
DM3
A3
DQ30
VSS
DQ31
CB4
CB5
VDDQ
CK1
/CK1
VSS
DM8
A10
CB6
VDDQ
CB7
KEY
VSS
DQ36
DQ37
VDD
DM4
DQ38
DQ39
VSS
DQ44
Pin
154
155
156
157
158
159
160
161
162
163
164
165
166
167
168
169
170
171
172
173
174
175
176
177
178
179
180
181
182
183
184
Back
/RAS
DQ45
VDDQ
/CS0
/CS1
DM5
VSS
DQ46
DQ47
NC
VDDQ
DQ52
DQ53
NC
VDD
DM6
DQ54
DQ55
VDDQ
NC
DQ60
DQ61
VSS
DM7
DQ62
DQ63
VDDQ
SA0
SA1
SA2
V33
4. PIN DESCRIPTION
Pin Name
A0 ~ A11
BA0 ~ BA1
DQ0 ~ DQ63
CB0 ~ CB7
DQS0 ~ DQS8
CK0,CK0 ~ CK2, CK2
CKE0,CKE1
CS0, CS1
RAS
CAS
WE
DM0 ~ DM8
VDD
VDDQ
VSS
VREF
V33
SDA
SCL
SA0 ~ 2
WP
VDDID
DU
Function
Address input (Multiplexed)
Bank Select Address
Data input/output
Check bit(Data-in/data-out)
Data Strobe input/output
Clock input
Clock enable input
Chip select input
Row address strobe
Column address strobe
Write enable
Data - in mask
Power supply (2.5V)
Power Supply for DQs(2.5V)
Ground
Power supply for reference
Serial EEPROM Power
Supply (3.3V)
Serial data I/O
Serial clock
Address in EEPROM
Write protection
VDD identification flag
Don’t use
NC
No connection
* These pins are not used in this module.
SAMSUNG ELECTRONICS CO., Ltd. reserves the right to change products and specifications without notice.
-1-
Rev. 0.2 Aug. 1999
KMM381L3313BT
5. Functional Block Diagram
Preliminary
184pin Unbuffered DDR SDRAM MODULE
CS1
CS0
DQS0
DM0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DQS4
DM4
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS
DQS
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
D0
D9
D4
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS
DQS
D13
DQS1
DM1
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DQS5
DM5
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS DQS
D1
D10
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
D5
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS
DQS
D14
DQS2
DM2
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS
DQS
DQS6
DM6
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
D2
D11
D6
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS
DQS
D15
DQS3
DM3
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
DQ31
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
DQS7
DM7
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS
DQS
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
D3
D12
D7
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS DQS
D16
DQS8
DM8
CB0
CB1
CB2
CB3
CB4
CB5
CB6
CB7
DM
I/O 7
I/O 6
I/O 1
I/O 0
I/O 5
I/O 4
I/O 3
I/O 2
CS
DQS
D8
DM
I/O 0
I/O 1
I/O 6
I/O 7
I/O 2
I/O 3
I/O 4
I/O 5
CS
DQS
D17
*Clock Net Wiring
Dram1
Dram2
R=120
Ω
Card
Edge
Dram3
Dram4
Dram5
Dram6
Serial PD
WP
SCL
47K
Ω
A0
SA0
A1
SA1
A2
SA2
SDA
* Clock Wiring
Clock
SDRAMs
Input
CK0/CK0
CK1/CK1
CK2/CK2
6 SDRAMs
6 SDRAMs
6 SDRAMs
BA0 - BAn
A0 - An
V
DDQ
V
DD
VREF
V
SS
V
DDID
BA0-BAn: SDRAMs D0 - D17 CKE1
RAS
A0-An: SDRAMs D0 - D17
CAS
D0 - D17
D0 - D17
D0 - D17
D0 - D17
Strap: see Note 4
CKE0
WE
CKE: SDRAMs D9 - D17
Notes:
RAS: SDRAMs D0 - D17
1. DQ-to-I/O wiring is shown as recom-
2. DQ/DQS/DM/CKE/S relationships must
be maintained as shown.
3. DQ, DQS, DM resistors: 22 Ohms.
4. VDDID strap connections
(for memory device VDD, VDDQ):
STRAP OUT (OPEN): VDD = VDDQ
STRAP IN (VSS): VDD
≠VDDQ.
CAS: SDRAMs D0 - D17
mended but may be changed.
CKE: SDRAMs D0 - D8
WE: SDRAMs D0 - D17
-2-
Rev. 0.2 Aug. 1999
KMM381L3313BT
6. ABSOLUTE MAXIMUM RATINGS
Parameter
Voltage on any pin relative to Vss
Voltage on V
DD
supply relative to Vss
Voltage on V
DDQ
supply relative to Vss
Storage temperature
Power dissipation
Short circuit current
Preliminary
184pin Unbuffered DDR SDRAM MODULE
Symbol
V
IN
, V
OUT
V
DD
V
DDQ
T
STG
P
D
I
OS
Value
-0.5 ~ 3.6
-1.0 ~ 4.6
-0.5 ~ 3.6
-55 ~ +150
18
50
Unit
V
V
V
°C
W
mA
Note :
Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
7. POWER & DC OPERATING CONDITIONS (SSTL_2 In/Out)
Recommended operating conditions(Voltage referenced to V
SS
=0V, T
A
=0 to 70°C)
Parameter
Supply voltage(for device with a nominal V
DD
of 2.5V)
I/O Supply voltage
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
Input leakage current
Output leakage current
Output High Current (V
OUT
= 1.95V)
Output Low Current (V
OUT
= 0.35V)
Symbol
V
DD
V
DDQ
V
REF
V
TT
V
IH
(DC)
V
IL
(DC)
V
IN
(DC)
V
ID
(DC)
I
I
I
OZ
I
OH
I
OL
Min
2.3
2.3
1.15
V
REF
-0.04
V
REF
+0.18
-0.3
-0.3
0.36
-5
-5
-15.2
15.2
Max
2.7
2.7
1.35
V
REF
+0.04
V
DDQ
+0.3
V
REF
-0.18
V
DDQ
+0.3
V
DDQ
+0.6
5
5
Unit
V
V
V
V
V
V
V
V
uA
uA
mA
mA
Note
1
2
3
Note
:
1. Typically, the value of V
REF
is expected to be about 0.5*V
DDQ
of the transmitting device.
V
REF
is expected to track variation in V
DDQ
.
2. Peak to peak AC noise on V
REF
may not exceed 2% V
REF
(DC).
3. V
tt
of the transmitting device must track V
REF
of the receiving device.
-3-
Rev. 0.2 Aug. 1999
