SMD Type
HEXFET Power MOSFET
KRF7601
Features
Generation V Technology
Ultra Low On-Resistance
N-Channel MOSFET
Very Small SOIC Package
Low Profile ( 1.1mm)
Available in Tape & Reel
Fast Switching
IC
IC
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, V
GS
@ 4.5V,Ta = 25
Continuous Drain Current, V
GS
@ 4.5V,T
A
= 70
Pulsed Drain Current*1
Power Dissipation Ta = 25
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt*1
Junction and Storage Temperature Range
Junction-to-Ambient *2
* I
SD
3.8A, d
i
/d
t
96A/
s, V
DD
V
(BR)DSS
,T
J
10sec.
150
V
GS
d
v
/d
t
T
J
, T
STG
R JA
*1
Symbol
I
D
I
D
I
DM
P
D
Rating
5.7
4.6
30
1.8
14
12
5
-55 to + 150
70
/W
W
W/
V
V/ns
A
Unit
*2 Surface mounted on FR-4 board, t
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1
SMD Type
KRF7601
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
*1 Pulse width
300µs; duty cycle
2%.
Body Diode)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
I
S
I
SM
V
SD
t
rr
Q
rr
T
J
= 25 , I
S
= 3.8A, V
GS
= 0V*1
T
J
= 25 , I
F
= 3.8A.V
R
=10V
d
i
/d
t
= 100A/
s*1
51
69
Symbol
V
(BR)DSS
V(BR)DSS
/
IC
IC
Testconditons
V
GS
= 0V, I
D
= 250 A
T
J
I
D
= 1mA,Reference to 25
V
GS
= 4.5V, I
D
= 3.8A*1
V
GS
= 2.7V, I
D
=1.9A*1
Min
20
Typ
Max
Unit
V
0.024
0.035
0.050
0.70
6.1
1.0
25
-100
100
14
2.0
6.3
5.1
47
24
32
650
300
150
1.8
22
3.0
9.5
V/
R
DS(on)
V
GS(th)
g
fs
I
DSS
V
DS
= V
GS
, I
D
= 250 A
V
DS
= 10V, I
D
= 1.9A*1
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125
V
S
A
I
GSS
V
GS
= 12V
V
GS
= -12V
I
D
= 3.8A
V
DS
= 16V
V
GS
= 4.5V,*1
V
DD
= 10V
I
D
= 3.8A
R
G
=6.2
R
D
= 2.6
V
GS
= 0V
V
DS
= 15V
ƒ= 1.0MHz
nA
nC
ns
pF
A
Body Diode) *2
30
1.2
77
100
V
ns
nC
*2 Repetitive rating; pulse width limited bymax
2
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