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KSA643GTA

TRANS PNP 20V 0.5A TO-92

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
晶体管类型
PNP
电流 - 集电极(Ic)(最大值)
500mA
电压 - 集射极击穿(最大值)
20V
不同 Ib,Ic 时的 Vce 饱和值(最大值)
400mV @ 50mA,500mA
电流 - 集电极截止(最大值)
200nA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)
200 @ 100mA,1V
功率 - 最大值
500mW
工作温度
150°C(TJ)
安装类型
通孔
封装/外壳
TO-226-3,TO-92-3(TO-226AA)(成形引线)
供应商器件封装
TO-92-3
文档预览
Is Now Part of
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device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
email any questions regarding the system integration to
Fairchild_questions@onsemi.com.
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KSA643 — PNP Epitaxial Silicon Transistor
September 2015
KSA643
PNP Epitaxial Silicon Transistor
Features
• Low Frequency Power Amplifier
• Collector Power Dissipation : P
C
= 500 mW
• Complement to KSD261
• Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
• Non Suffix “-C” means Side Collector (1. Emitter 2. Base 3. Collector)
12
3
1
2
3
TO-92
1. Emitter
2. Base
3. Collector
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
KSA643YTA
Top Mark
A643
Package
TO-92 3L
Packing Method
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Parameter
Value
-40
-20
-5
-500
-700
150
-55 to 150
Unit
V
V
V
mA
mA
°C
°C
Collector Current (Pulse)
(1)
Junction Temperature
Storage Temperature
Note:
1. PW
10 ms, duty cycle
50%
© 2001 Fairchild Semiconductor Corporation
KSA643 Rev. 1.3
www.fairchildsemi.com
KSA643 — PNP Epitaxial Silicon Transistor
Thermal Characteristics
(2)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
C
R
θJA
Parameter
Collector Power Dissipation
Thermal Resistance, Junction-to-Ambient
Value
500
250
Unit
mW
°C/W
Note:
2. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
(3)
Base-Emitter Saturation Voltage
(3)
Conditions
I
C
= -100
μA,
I
E
= 0
I
C
= -10 mA, I
B
= 0
I
E
= -10
μA,
I
C
= 0
V
CB
= -25 V, I
E
= 0
V
EB
= -3 V, I
C
= 0
V
CE
= -1 V, I
C
= -100 mA
I
C
= -500 A, I
B
= -50 mA
Min.
-40
-20
-5
Typ.
Max.
Unit
V
V
V
-200
-200
40
-0.3
-1.0
400
-0.4
-1.3
nA
nA
V
V
Collector-Emitter Saturation Voltage
(3)
I
C
= -500 A, I
B
= -50 mA
Note:
3. Pulse Test: PW
350
μs,
duty cycle
2%
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
© 2001 Fairchild Semiconductor Corporation
KSA643 Rev. 1.3
www.fairchildsemi.com
2
KSA643 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-500
-450
1000
V
CE
= -1V
I
C
[mA], COLLECTOR CURRENT
I
B
= -1.6mA
-400
-350
-300
-250
-200
-150
-100
-50
0
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
I
B
= -1.4mA
I
B
= -1.2mA
I
B
= -1.0mA
I
B
= -0.8mA
I
B
= -0.6mA
I
B
= -0.4mA
I
B
= -0.2mA
10
-1
-10
-100
-1000
h
FE
, DC CURRENT GAIN
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
-1000
I
C
= 10 I
B
V
CE
= -1V
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
-100
-0.1
-10
V
CE
(sat)
-0.01
-1
-10
-100
-1000
-1
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
I
E
= 0
f = 100KHz
C
ob
[pF], CAPACITANCE
10
1
-1
-10
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
© 2001 Fairchild Semiconductor Corporation
KSA643 Rev. 1.3
www.fairchildsemi.com
3
KSA643 — PNP Epitaxial Silicon Transistor
Physical Dimensions
Figure 6. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo Type
© 2001 Fairchild Semiconductor Corporation
KSA643 Rev. 1.3
www.fairchildsemi.com
4
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