DIP Type
NPN Transistors
KTC3206
TO-92L
4.9 ± 0.2
Transistors
Unit:mm
■
Features
●
High Breakdown Voltage
●
High Transition Frequency
●
Complementary to KTA1024
8.0 ± 0.2
0.7 ±0.1
1 2 3
1.27
2.54 ±0.1
1.60
(max)
3.9 ± 0.2
0.30
(max)
0.35 ~ 0.45
13.8~14.2
0.45 ±0.1
4.0(min)
1. Emitter
2.Collector
3. Base
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Rating
200
150
5
50
1
150
-55 to 150
mA
W
℃
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Base - emitter saturation voltage
DC current gain
Collector output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
C
ob
f
T
Test Conditions
Ic= 100uA， I
E
= 0
Ic= 1 mA，I
B
=0
I
E
= 100uA， I
C
= 0
V
CB
= 200 V , I
E
= 0
V
EB
= 5V , I
C
=0
I
C
=10mA, I
B
=1mA
I
C
=10mA, I
B
=1mA
V
CE
= 5V, I
C
=10mA
V
CB
= 10V, I
E
= 0,f=1MHz
V
CE
= 30V, I
C
= 10mA
120
70
Min
200
150
5
0.1
0.1
0.5
1
240
5
pF
MHz
uA
V
V
Typ
Max
Unit
■
Classification of h
fe
Type
Range
KTC3206-O
70-140
KTC3206-Y
120-240
1.28 ~ 1.58
www.kexin.com.cn
1
DIP Type
NPN Transistors
KTC3206
■
Typical Characterisitics
Transistors
2
www.kexin.com.cn
SMD Type
NPN Transistors
KTC3206
■
Typical Characterisitics
Transistors
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