SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
High DC Current Gain
: h
FE
=800 3200. (V
CE
=5.0V, I
C
=300mA).
Wide Area of Safe Operation.
Low Collector Saturation Voltage
: V
CE(sat)
=0.17V (I
C
=500mA, I
B
=5.0mA).
D
K
F
F
D
KTD1003
EPITAXIAL PLANAR NPN TRANSISTOR
A
H
C
G
J
B
E
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
*
T
j
T
stg
RATING
60
50
8
1.0
500
1
150
-55
150
UNIT
V
V
V
A
mW
W
1
2
3
DIM
A
B
C
D
E
F
G
H
J
K
MILLIMETERS
4.70 MAX
_
2.50 + 0.20
1.70 MAX
0.45+0.15/-0.10
4.25 MAX
_
1.50 + 0.10
0.40 TYP
1.75 MAX
0.75 MIN
0.5+0.10/-0.05
1. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
SOT-89
P
C
* : KTD1003 Mounted on Ceramic Substrate (250mm
2
x0.8t)
Marking
h
FE
Rank
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Output Capacitance
Transition Frequency
Base-Emitter Voltage
Note : h
FE
Classification
A:800 1600,
SYMBOL
I
CBO
I
EBO
h
FE
(1) Note
h
FE
(2)
V
CE(sat)
V
BE(sat)
C
ob
f
T
V
BE
B:1200
TEST CONDITION
V
CB
=60V, I
E
=0
V
EB
=8V, I
C
=0
V
CE
=5.0V, I
C
=300mA
V
CE
=5.0V, I
C
=1.0A
I
C
=500mA, I
B
=5.0mA
I
C
=500mA, I
B
=5.0mA
V
CB
=10V, I
E
=0, f=1.0MHz
V
CE
=10V, I
C
=500mA, f=100MHz
V
CE
=5V, I
C
=100mA
MIN.
-
-
800
400
-
-
-
150
-
TYP.
-
-
1500
-
0.17
0.80
18
250
630
MAX.
100
100
3200
-
0.30
1.2
30
-
700
V
V
pF
MHz
mV
UNIT
nA
nA
2400, C:2000 3200
2001. 3. 22
Revision No : 4
L
Type Name
1/2
KTD1003
h
FE
- I
C
10k
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(A)
5k
3k
1k
500
300
100
50
10m
30m
100m
300m
1
3 5
10
V
CE
=10V
V
CE
=5.0V
V
CE
=2.0V
I
C
- V
CE
1.0
PULSED
10
mA
5m
A
0.8
4mA
3mA
0.6
2mA
6mA
7mA
8mA
9mA
0.4
0.2
I
B
=1mA
COLLECTOR CURRENT I
C
(A)
0
0
0.2
0.4
0.6
0.8
1.0
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
h
FE
- I
C
10k
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I
C
(A)
5k
3k
1k
500
300
100
50
10m
30m
100m
300m
1
3 5
10
V
CE
=5.0V
Ta=75 C
Ta=25 C
Ta=-25 C
I
C
- V
CE
1.0
0
µ
30
A
A
250
µ
PULSED
0.8
500µA
µ
A
200
150
µ
A
0.6
100
µ
A
0.4
I
B
=50µA
0.2
COLLECTOR CURRENT I
C
(A)
0
0
4
8
12
16
20
COLLECTOR-EMITTER VOLTAGE V
CE
(V)
COLLECTOR-EMITTER SATURATION VOLTAGE
V
CE(sat)
(V)
BASE-EMITTER SATURATION VOLTAGE
V
BE(sat)
(V)
V
BE(sat)
V
CE(sat)
- I
C
10
3
1
0.3
0.1
0.03
V
CE(s
at)
V
BE(sat)
: I
C
/I
B
=20
I
C
/I
B
=100
50
20
0.01
0.01
0.03
0.1
0.3
1
3
10
COLLECTOR CURRENT I
C
(A)
2001. 3. 22
Revision No : 4
2/2
