SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
・V
DSS
= 75V, I
D
= 130A
・Drain-Source
ON Resistance :
R
DS(ON)
=4.7mΩ(Max.) @V
GS
= 10V
D
N
N
A
KU047N08P
N-ch Trench MOS FET
O
C
F
E
G
B
Q
DIM MILLIMETERS
_
9.9 + 0.2
A
B
C
D
E
I
K
M
L
J
H
P
F
G
H
I
J
K
L
M
N
O
15.95 MAX
1.3+0.1/-0.05
_
0.8 + 0.1
_
3.6 + 0.2
_
2.8 + 0.1
3.7
0.5+0.1/-0.05
1.5
_
13.08 + 0.3
1.46
_
1.4 + 0.1
_
1.27 + 0.1
_
2.54 + 0.2
_
4.5 + 0.2
_
2.4 + 0.2
_
9.2 + 0.2
MAXIMUM RATING
(Tc=25℃)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
Derate above 25℃
T
j
T
stg
SYMBOL
V
DSS
V
GSS
I
D
I
DP
E
AS
E
AR
dv/dt
P
D
RATING
75
±20
130
83
400*
700
9
4.5
167
1.33
150
-55 ~ 150
mJ
mJ
V/ns
W
W/℃
℃
℃
A
UNIT
V
V
1
2
3
1. GATE
2. DRAIN
3. SOURCE
P
Q
TO-220AB
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance,
Junction-to-Ambient
R
thJC
R
thJA
0.75
62.5
℃/W
℃/W
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
D
G
S
2011. 1. 14
Revision No : 0
1/7
KU047N08P
ELECTRICAL CHARACTERISTICS
(Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
BV
DSS
ΔBV
DSS
/ΔT
j
I
DSS
V
th
I
GSS
R
DS(ON)
I
D
=250μ V
GS
=0V
A,
I
D
=5mA, Referenced to 25℃
V
DS
=75V, V
GS
=0V,
V
DS
=V
GS
, I
D
=250μ
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
D
=65A
75
-
-
2.0
-
-
-
0.07
-
-
-
3.9
-
-
10
4.0
±100
4.7
V
V/℃
μ
A
V
nA
mΩ
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay time
Turn-on Rise time
Turn-off Delay time
Turn-off Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SP
V
SD
t
rr
Q
rr
V
GS
<V
th
I
S
=130A, V
GS
=0V
I
S
=80A, V
GS
=0V,
s
dIs/dt=300A/μ
-
-
-
-
-
-
-
-
65
0.18
130
A
520
1.4
-
-
V
ns
μ
C
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=25V, V
GS
=0V, f=1.0MHz
V
DD
=37V
I
D
=80A
R
G
=25Ω
(Note4,5)
V
DS
=60V, I
D
=80A
V
GS
=10V
(Note4,5)
-
-
-
-
-
-
-
-
-
-
200
40
65
140
200
520
200
8800
815
390
-
-
-
-
-
ns
-
-
-
-
-
pF
nC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
H,
Note 2) L =50μ I
S
=80A, V
DD
=60V, R
G
=25Ω, Starting T
j
=25℃.
Note 3) I
S
≤80A,
dI/dt≤200A/㎲, V
DD
≤BV
DSS
, Starting T
j
=25℃.
Note 4) Pulse Test : Pulse width
≤
300㎲, Duty Cycle
≤
2%.
Note 5) Essentially independent of operating temperature.
Marking
1
KU
047N08P
001
2
1
2
PRODUCT NAME
LOT NO
2011. 1. 14
Revision No : 0
2/7
KU047N08P
Fig1. I
D
- V
DS
10
3
V
GS
=5V
Fig2. I
D
- V
GS
10
3
V
DS
= 2V
Drain Current I
D
(A)
10
2
Drain Current I
D
(A)
V
GS
=7V, 10V
V
GS
=4.5V
10
2
100
C
25
C
10
1
10
1
10
0
10
-2
10
-1
10
0
10
1
10
2
10
0
2
3
4
5
6
7
8
Drain - Source Voltage V
DS
(V)
Gate - Source Voltage V
GS
(V)
Fig3. BV
DSS
- Tj
Normalized Breakdown Voltage BV
DSS
1.3
3.0
V
GS
= 0V
I
DS
= 5mA
V
GS
=10V
I
D
=65A
Fig4. R
DS(ON)
- I
D
On - Resistance R
DS(ON)
(mΩ)
50
100
150
200
1.2
1.1
1.0
0.9
0.8
-50
2.5
2.0
1.5
1.0
0.5
0
0
-50
0
50
100
150
200
Junction Temperature Tj ( C )
Drain Current I
D
(A)
Fig5. I
S
- V
SD
-
10
3
10
3
Fig6. I
S
- V
SD
-
Reverse Drain Current I
S
(A)
Reverse Drain Current I
S
(A)
V
GS
=7V, 10V
10
2
10
2
V
GS
=3V
V
GS
=0V
V
GS
=2V
100
C
25
C
V
GS
=4V
10
1
10
1
10
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Source - Drain Voltage V
SD
(V)
Source - Drain Voltage V
SD
(V)
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Revision No : 0
3/7
KU047N08P
Fig7. R
DS(ON)
- I
D
20
180
160
15
Fig8. ID- T
j
On - Resistance R
DS(ON)
(mΩ)
Drain Current I
D
(A)
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
10
V
GS
=4.5V
V
GS
=5V
5
V
GS
=10V
0
0
50
100
150
200
250
300
350
Drain Current I
D
(A)
Junction Temperature T
j
( )
Fig 9. C - V
DS
10
5
12
Fig10. Qg- V
GS
Gate - Source Voltage V
GS
(V)
V
DS
=60V
10
Capacitance (pF)
10
4
Ciss
8
6
4
2
0
0
10
3
Coss
Crss
10
2
0
Frequency=1MHz, V
GS
=0V
10
20
30
40
40
80
120
150
200
240
Drain - Source Voltage V
DS
(V)
Gate - Charge Qg (nC)
Fig11. Safe Operation Area
10
3
Drain Current ID (A)
10us
10
2
100us
1ms
10
1
Operation in this
area is limited by R
DS(ON)
10ms
DC
10
0
Tc= 25 C
Single nonrepetitive pulse
10
-1 -1
10
10
0
10
1
10
2
Drain - Source Voltage V
DS
(V)
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Revision No : 0
4/7
KU047N08P
Fig12. Transient Thermal Response Curve
Normalized Transient Thermal Resistance
10
0
Duty=0.5
0.2
10
-1
0.1
0.05
P
DM
t
1
t
2
0.02
0.01
Single Pulse
- Duty Factor, D= t
1
/t
2
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-5
10
-4
TIME (sec)
2011. 1. 14
Revision No : 0
5/7
