Teccor
®
brand Thyristors
High Energy Bidirectional SIDACs
Kxxx0yH Series
Description
The new Kxxx0yH is a higher energy SIDAC switch for gas
ignition applications requiring higher current pulse current
especially at low repetition rate. It is offered in a DO-15 and
TO-92 leaded packages as well as DO-214 surface mount
package. Voltage activation of this solid state switch is
accomplished with peak voltage level of 190 to 280Volts. The
SIDAC is a silicon bilateral voltage triggered Thyristor switch
that switches on through a negative resistance region to a
low on-state voltage. Conduction will continue until current
is interrupted or lowered below minimum holding current of
the device.
Features
Schematic Symbol
to 280V
Applications
Suitable for high voltage power supplies, natural gas
igniters, and Xenon flash ignition.
Electrical Specifications
(T
J
= 25°C, unless otherwise specified)
Symbol
Parameters
Test Conditions
K2000yH
K2200yH
K2400yH
K2500yH
K2000yH
K2200yH
K2400yH
K2500yH
50/60Hz, T
J
< 125°C
I
T
= 1A
R
L
= 100Ω
50/60Hz Sine Wave
50/60Hz Sine Wave
50/60Hz Sine Wave
60Hz
t
p
= 10μs
5Hz
1500
-40
-40
DO-15
DO-214
DO-92
DO-15
DO-92
Min
190
205
220
240
180
180
190
200
Max
215
230
250
280
Unit
Capability
V
BO
Breakover/Trigger Voltage
V
V
DRM
I
T(RMS)
V
TM
I
H
Repetitive Peak Off-state Voltage
On-state RMS Current
Peak On-state Voltage
Dynamic Holding Current
(V
BO
– V
S
)
Switching Resistance, R
S
= ________
(I
S
– I
BO
)
Breakover Current
Peak Repetitive Pulse Current
(refer to figure 4)
Critical Rate of Rise of On-State Current
Critical Rate of Rise of Off-State Voltage
Storage Temperature Range
Junction Temperature Range
Thermal Resistance, Junction to Lead
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
V
1
1.5
150
A
V
mA
R
S
I
BO
I
TRM
di/dt
dv/dt
T
S
T
J
R
R
R
JL
JC
100
50
120
280
150
150
125
18
30
35
75
95
μA
A
A/μs
V/μs
°C
°C
°C/W
°C/W
°C/W
JA
Note: xxx - voltage, y = package
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
321
Revised: August 29, 2008
Kxxx0yH Series
High Energy SIDACs
Teccor
®
brand Thyristors
High Energy Bidirectional SIDACs
Figure 1: V-I Characteristics
+I
I
T
I
H
I
S
I
DRM
I
BO
+V
V
T
V
BO
R
S
Figure 2: On-state Current vs. On-state
Voltage (Typical)
9
Instantaneous On-state Current (i
T
) – Amps
8
7
6
5
4
3
2
1
0
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-V
R
S =
(V
BO
- V
S
)
(I
S
- I
BO
)
V
S
V
DRM
Instantaneous On-state Voltage (v
T
) – Volts
-I
Figure 3: Power Dissipation vs. On-state Current
(Typical)
1.2
Figure 4: Repetitive Peak On-state Current (I
TRM
)
vs. Pulse Width at Various Frequencies
Repetitive Peak On-State Current (I
TRM
) - Amps
1000
di/dt Limit Line
I
TM
Average On-State Power Dissipation
[P
D(AV)
] - Watts
1.0
t
O
1/f
0.8
100
1 kHz
5
Hz
60 Hz
5
kHz
10
0.6
0.4
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE:
See basic SIDAC circuit in Figure 12
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.2
0.0
1
1
10
100
1000
RMS On-State Current [I
T(RMS)
] - Amps
Pulse Base Width (t
O
) - us
Figure 5: Surge Peak On-state Current
vs. Number of Cycles
100
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
RMS ON-STATE CURRENT: I
T
RMS Maximum Rated
Value at Specified Junction Temperature
Figure 6: Normalized V
BO
Change
vs. Junction Temperature
10%
8%
6%
Peak Surge (Non-repetitive)
On-state Current (I
TSM
) – Amps
V
BO
Change -- %
Notes:
1) Blocking capability may be lost during
and immediately following surge
current interval.
2) Overload may not be repeated until
junction temperature has returned
to steady-state rated value.
4%
2%
0%
-2%
-4%
-6%
-8%
-40
-20
0
20
40
60
80
100
120
140
10
1
1
10
100
1000
Surge Current Duration -- Full Cycles
Junction Temperature (T
J
) -- °C
Kxxx0yH Series
322
Revised: August 29, 2008
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor
®
brand Thyristors
High Energy Bidirectional SIDACs
Figure 7: Normalized DC Holding Current
vs. Junction Temperature
2.0
Figure 8: Maximum Allowable Case Temperature
vs. RMS On-State Current
130
Maximum Allowable Lead/Case
Temperature (T
C
) - °C
120
Kxxx0GH
110
Ratio of I
H
/ I
H
(T
J
= 25°C)
1.5
1.0
100
Kxxx0SH
Kxxx0EH
0.5
90
CURRENT WAVEFORM: Sinusoidal - 60Hz
LOAD: Resistive or Inductive
0.0
-40
-15
10
35
60
85
110
125
80
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Junction Temperature (T
J
) -- °C
RMS On-State Current [I
T(RMS)
] - Amps
Figure 9: Maximum Allowable Ambient Temperature
vs. RMS On-State Current
140
CURRENT WAVEFORM : Sinus oidal - 60Hz
LOAD: Re s is tive or Inductive
FREE AIR RATING
Figure 10: Normalized Repetitive Peak Breakover
Current (I
BO
) vs. Junction Temperature
10
Maximum Allowable Ambient
Temperature (T
A
) - °C
120
100
80
Kxxx0GH
60
Kxxx0SH
Kxxx0EH
40
20
0.0
0.2
0.4
0.6
0.8
1.0
Repetitive Peak Breakover
Current (I
BO
) Multiplier
1
20
30
40
50
60
70
80
90
100
110
120
130
RMS On-State Current [I
T(RMS)
] - Amps
Junction Temperature (T
J
) -- °C
Figure 12: Basic SIDAC Circuit
Push to test
S1
100-250 V ac
60 Hz
Switch to test
in each direction
100
1%
Device
Under
Test
100-250 V ac
60 Hz
V
BO
V
BO
V
BO
S1
Scope
I
H
Load
I
H
120-145
Conduction
Angle
I
PK
Trace Stops
˚
I
H
Load Current
I
H
Scope Indication
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
323
Revised: August 29, 2008
Kxxx0yH Series
High Energy SIDACs
Figure 11: Dynamic Holding Current Test
Circuit for SIDACs
Teccor
®
brand Thyristors
High Energy Bidirectional SIDACs
Figure 13: Relaxation Oscillator Using a SIDAC
Figure 14: General Gas Ignitor Circuit
(a) Circuit
V
R
SIDAC
VDC(IN)
≥
VB0
V
C
t
RL
IL
VC
(b) Waveforms
BO
SCR
Sidac
100-250 V ac
60 Hz
100-250 V ac
60 Hz
C
IL
Rmax
≤
R
min
≥
VIN - VBO
I
BO
VIN - VTM
I
H (MIN)
t
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Temperature (t
L
)
Pb – Free assembly
T
P
Temperature
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
t
P
Ramp-up
T
L
T
S(max)
Preheat
t
L
Ramp-do
Ramp-down
T
S(min)
t
S
25
time to peak temperature
Time
Peak Temperature (T
P
)
Time within
5°C
of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
Kxxx0yH Series
324
Revised: August 29, 2008
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
Teccor
®
brand Thyristors
High Energy Bidirectional SIDACs
Physical Specifications
Terminal Material
Terminal Finish
Body Material
Copper Alloy
100% Matte Tin-plated /Pb Free
solder dipped.
UL recognized epoxy meeting flammability
classification 94V-0.
Reliability/Environmental Tests
Test
High Temperature
Voltage Blocking
Specifications and Conditions
MIL
-STD-750: Method 1040, Condition
A Rated V
DRM
(VAC-peak), 125°C, 1008
hours
MIL
-STD-750: Method 1051
-40°C to 150°C, 15-minute dwell, 100
cycles
Temperature Cycling
Biased Temperature &
EIA/JEDEC: JESD22-A101
Humidity
(VDC), 85°C, 85%RH, 1008 hours
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long
way toward extending the operating life of the Thyristor.
Overheating and surge currents are the main killers of
SIDACs. Correct mounting, soldering, and forming of the
leads also help protect against component damage.
High Temp Storage
Low-Temp Storage
Thermal Shock
MIL
-STD-750: Method 1031
150°C, 1008 hours
-40°C, 1008 hours
MIL
-STD-750: Method 1056
0°C to 100°C, 5-minute dwell, 10-second
transfer, 10 cycles
Autoclave
EIA/JEDEC: JESD22-A102
(Pressure Cooker Test)
121°C, 100%RH, 2atm, 168 hours
Resistance to
Solder Heat
Solderability
Repetitive Surge
Life Testing
MIL
-STD-750: Method 2031
260°C, 10 seconds
ANSI/J-STD-002: Category 3
MIL
-STD-750: Method 2036, Condition E
Dimensions — DO-214
B
D
CASE TEMPERATURE
MEASURING POINT
Dimension
A
Inches
Max
0.130
0.201
0.077
0.159
0.030
0.075
0.002
0.077
0.043
0.006
0.030
Max
0.156
0.220
0.087
0.181
0.063
0.096
0.008
0.104
0.053
0.016
0.055
Millimeters
Min
3.30
5.10
1.95
4.05
0.75
1.90
0.05
1.95
1.09
0.15
0.76
Max
3.95
5.60
2.20
4.60
1.60
2.45
0.20
2.65
1.35
0.41
1.40
C
A
B
C
D
K
H
F
L
E
F
E
J
G
H
0.079"
(2.0mm)
J
K
L
0.110"
(2.8mm)
0.079"
(2.0mm)
Recommended
Soldering Pad Outline
©2008 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to http://www.littelfuse.com for current information.
325
Revised: August 29, 2008
Kxxx0yH Series
High Energy SIDACs
G
