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L1SS400GT1G

Rectifier Diode, 1 Element, 0.1A, 90V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

器件类别:分立半导体    二极管   

厂商名称:LRC

厂商官网:http://www.lrc.cn

器件标准:

下载文档
器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
LRC
包装说明
R-PDSO-F2
Reach Compliance Code
unknown
ECCN代码
EAR99
Is Samacsys
N
其他特性
HIGH RELIABILITY
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.2 V
JESD-30 代码
R-PDSO-F2
最大非重复峰值正向电流
0.5 A
元件数量
1
端子数量
2
最高工作温度
125 °C
最大输出电流
0.1 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
SMALL OUTLINE
峰值回流温度(摄氏度)
NOT SPECIFIED
最大功率耗散
0.15 W
最大重复峰值反向电压
90 V
最大反向恢复时间
0.004 µs
表面贴装
YES
端子形式
FLAT
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
LESHAN RADIO COMPANY, LTD.
Switching diode
Applications
High speed switching
Features
1) Extremely small surface mounting type.
2) High Speed.
3) High reliability.
Construction
Silicon epitaxial planar
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change
Requirements; AEC-Q101 Qualified and PPAP
Capable.
L1SS400GT1G
S-L1SS400GT1G
1
2
SOD -
723
1
CATHODE
2
ANODE
ORDRING INFORMATION
Device
L1SS400GT1G
Marking
3
Shipping
4000/Tape&Reel
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s)
Junction temperature
Storage temperature
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance
Junction-to-Ambient
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Min.
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
V
F
I
R
C
D
t
rr
R
θ
JA
Symbol
V
RM
V
R
I
FM
I
O
I
surge
Tj
T
stg
P
D
Limits
90
80
225
100
500
150
– 55 ~ +150
150
1.2
833
Unit
V
V
mA
mA
mA
°C
°C
mW
mW/°C
°C/W
Typ.
0.72
Max.
1.2
0.1
3.0
4
Unit
V
µA
pF
ns
Conditions
I
F
=100mA
V
R
=80V
V
R
=0.5V , f=1MHz
VR
=6V , I
F
=10mA , R
L
=100
Rev.A 1/3
LESHAN RADIO COMPANY, LTD.
L1SS400GT1G,S-L1SS400GT1G
ELECTRICAL CHARACTERISTIC CURVES
(Ta = 25°C)
1000
10
FORWARD CURRENT:IF(mA)
100
REVERSE CURRENT :IR(uA)
1
10
0.1
1
0.01
0.1
0.1
0.001
0.3
0.5
0.7
0.9
1.1
0
20
40
60
80
100
120
FORWARD VOLTAGE:VF(V)
-55℃
25℃
75℃
100℃
125℃
-55℃
REVERSE VOLTAGE:VR(V)
25℃
75℃
100℃
125℃
Fig.1 FORWARD CHARACTERISTICS
Fig.2 REVERSE CHARACTERISTICS
0.9
f=1MHz
0.8
DIODE CAPACITANCE : CD (pF)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
12
14
REVERSE VOLTAGE:VR(V)
Fig.3 VR-CD CHARACTERISTICS
Rev.A 2/3
LESHAN RADIO COMPANY, LTD.
L1SS400GT1G,S-L1SS400GT1G
SOD−723
D
−X−
−Y−
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
DIM
A
b
c
D
E
H
E
L
MILLIMETERS
INCHES
MIN
NOM MAX MIN
NOM MAX
0.49
0.52
0.55
0.019 0.020 0.022
0.25
0.28
0.32 0.0098 0.011 0.013
0.08
0.12
0.15 0.0032 0.0047 0.0059
0.95
1.00
1.05
0.037 0.039 0.041
0.55
0.60
0.65
0.022 0.024 0.026
1.35
1.40
1.45
0.053 0.055 0.057
0.15
0.20
0.25
0.006 0.0079 0.010
b
2X
0.08 (0.0032) X Y
A
c
L
H
E
SOLDERING FOOTPRINT*
1.1
0.043
0.45
0.0177
0.50
0.0197
SCALE 10:1
mm
inches
Rev.A 3/3
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