T-1 (3mm) INFRA-RED EMITTING DIODE
Features
MECHANICALLY AND SPECTRALLY MATCHED
TO THE L32P3C PHOTOTRANSISTOR.
BLUE TRANSPARENT.
L34SF5BT
Package Dimensions
Description
SF5 Made with Gallium Aluminum Arsenide Infrared
Emitting diodes.
Notes:
1. All dimensions are in millimeters (inches).
2. Tolerance is
±0.25(0.01")
unless otherwise noted.
3. Lead spacing is measured where the lead emerge package.
4. Specifications are subjected to change without notice.
Selection Guide
Par t No .
Di c e
L en s Ty p e
Iv (mW/s r )
@20mA
Min.
L34SF5BT
GaAlAs
Iv (mW/s r )
@50mA
Min.
8
Typ.
20
View in g
An g l e
2θ1/2
50°
Typ.
4
Blue Transparent
2
Note:
1.
θ1/2
is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value.
SPEC NO: DSAA0101
REV NO: V.1
DATE: MAR/08/2001
PAGE: 1 OF 3
Electrical / Optical Characteristics at T
)
=25°C
°
Item
P/N
Sy m b o l
Ty p .
Max .
Un i t
Co n d i t i o n
Forward Voltage
S F5
VF
1.4
1.7
V
IF=20mA
Reverse Current
S F5
IR
-
10
uA
VR=5V
Junction Capacitance
S F5
Co
90
-
pF
V=0 f=1MHz
Peak Spectral Wavelength
S F5
lR
880
-
nm
IF=20mA
Spectral Bandwidth
S F5
∆λ
50
-
nm
IF=20mA
Absolute Maximum Ratings at T
)
=25°C
°
Item
Power Dissipation
Forward Current
Peak Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 4mm below package base.
Sy m b o l
Pd
IF
I
P
Max imu m Ratin g
100
50
1.2
5
-45~ +80
-45~ +80
Un i t s
mW
mA
A
V
°C
°C
VR
Topr
Tstg
SPEC NO: DSAA0101
REV NO: V.1
DATE: MAR/08/2001
PAGE: 2 OF 3
L34SF5BT
SPEC NO: DSAA0101
REV NO: V.1
DATE: MAR/08/2001
PAGE: 3 OF 3
