UNISONIC TECHNOLOGIES CO., LTD
L8115
FET BIAS CONTROLLER WITH
POLARIZATION SWITCH AND
TONE DETECTION
DESCRIPTION
The UTC
L8115
is designed to bias the MOSFETs that are
commonly used in LNBs that can implies minimum external
components requires.
LINEAR INTEGRATED CIRCUIT
FEATURES
* Can bias up to 3 FETs
* HB and LB switch for LNBs.
* Drain current adjustable by external resistors.
* Band switching by 22KHz tone detection.
Lead-free:
L8115L
Halogen-free: L8115G
ORDERING INFORMATION
Normal
L8115-R16-R
L8115-R20-R
Ordering Number
Lead Free Plating
L8115L-R16-R
L8115L-R20-R
Halogen Free
L8115G-R16-R
L8115G-R20-R
Package
SSOP-16
SSOP-20
Packing
Tape Reel
Tape Reel
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1 of 6
QW-R123-013,C
L8115
PIN CONFIGURATION
LINEAR INTEGRATED CIRCUIT
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QW-R123-013,C
L8115
ABSOLUTE MAXIMUM RATINGS
PARAMETER
LINEAR INTEGRATED CIRCUIT
SYMBOL
RATINGS
UNIT
Supply Voltage
V
CC
-0.6 ~ +12
V
Input Voltage
V
IN
25 Continuous
V
Supply Current
I
CC
100
mA
Drain Current (per FET)(set by RCAL)
I
D
0 ~ 15
mA
Power Dissipation(Ta=25°С)
P
D
500
mW
Operating Temperature
T
OPR
-40~+80
°С
Storage Temperature
T
STG
-50~+85
°С
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°С, V
CC
=5V, I
D
=10mA, R
CAL
=33KΩ, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Supply Voltage
V
CC
5
I
D1
= I
D2
(or I
D12
)=I
D3
=0
I
D1
=0,I
D2
(or I
D12
)= I
D3
=10mA, V
POL
=14V
Supply Current
I
CC
I
D2
=0,I
D1
(or I
D12
)= I
D3
=10mA, V
POL
=15.5V
I
D1
and I
D3
=0, I
LB
=10mA
I
D1
and I
D3
=0, I
HB
=10mA
I
SUB
=0
-3.05
Substrate Voltage
V
SUB
(Internally generated)
I
SUB
=-200μA
Gate Voltage
E
NG
Output Noise
C
G
=4.7nF,C
D
=10nF
Drain Voltage
E
ND
Oscillator Frequency
f
OSC
180
TYP.
8.5
28
28
18
18
-2.8
MAX. UNIT
10
V
15
mA
35
mA
35
mA
25
mA
25
mA
-2.55
V
-2.4
V
0.005 Vpkpk
0.02 Vpkpk
800
kHz
330
GATE CHARACTERISTICS
PARAMETER
Output Current Range
Off
Output Voltage
Low
Gate 1
High
Off
Output Voltage
Low
Gate 2
High
Output Voltage
Low
Gate 3
High
SYMBOL
I
GO
V
G1O
V
G1L
V
G1H
V
G2O
V
G2L
V
G2H
V
G3L
V
G3H
SYMBOL
I
D
I
DRNG
△I
DV
△I
DT
V
D1
V
D2
V
D3
△V
DV
△V
DT
I
LEAK1
I
LEAK2
TEST CONDITIONS
I
D1
=0mA, V
POL
=14V, I
GO1
=-10μA
I
D1
=12mA, V
POL
=15.5V, I
GO1
=-10μA
I
D1
=8mA, V
POL
=15.5V, I
GO1
=0μA
I
D2
=0mA, V
POL
=15.5V, I
GO2
=-10μA
I
D2
=12mA, V
POL
=14V, I
GO2
=-10μA
I
D2
=8mA, V
POL
=14V, I
GO2
=0μA
I
D3
=12mA, I
GO3
=-10μA
I
D3
=8mA, I
GO3
=0μA
TEST CONDITIONS
Set by R
CAL
V
CC
=5 ~ 10V
T
J
=-40 ~ +70°С
I
D1
=10mA,V
POL
=15.5V
I
D2
=10mA,V
POL
=14V
I
D3
=10mA,V
POL
=15.5V
V
CC
=5 ~ 10V
T
J
=-40 ~ +70°С
V
D1
=0.5V,V
POL
=14V
V
D2
=0.5V,V
POL
=15.5V
MIN.
-30
-2.5
-2.5
0.4
-2.5
-2.5
0.4
-3
0.4
MAX. UNIT
2000
μA
-2.25
-2
V
-2.25
-2
V
0.75
1
V
-2.25
-2
V
-2.25
0.75
-2.75
0.75
-2
1
-2
1
V
V
V
V
TYP.
DRAIN CHARACTERISTICS
PARAMETER
Current
Current range
With V
CC
With T
J
Drain 1 Voltage: High
Drain 2 Voltage: High
Drain 3 Voltage: High
With V
CC
Voltage Change
With T
J
Leakage Current Drain 1
(SSOP-20 only) Drain 2
Current Change
MIN.
8
0
TYP.
10
0.5
0.05
2.2
2.2
2.2
0.5
50
MAX. UNIT
12
mA
15
mA
%/V
%/°С
2.4
V
2.4
V
2.4
V
%/V
ppm
10
μA
10
μA
2
2
2
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L8115
TONE DETECTION CHARACTERISTICS
PARAMETER
Filter Amplifier
Bias Voltage
Input Impedance
Amplifier Gain
V Threshold
Output Stage
Lov Bias Current
Lov Volt Range
SYMBOL
V
OUT
F
INZ
A
G
F
VT
I
LOV
V
LOV
LINEAR INTEGRATED CIRCUIT
TEST CONDITIONS
I
FIN
=0
V
FIN
=100mV p/p
V
FIN
=100mV p/p
MIN
1.75
TYP
1.95
150
30
170
MAX
2.15
UNIT
V
Ω
V/mA
mVp/p
μA
V
V
V
V
V
V
V
100
350
V
LOV
=0V
I
L
=50mA(LB or HB)
V
LOV
=0V, I
L
=0mA, R
Ib-Csub
=1MΩ
LB Output Low
V
LBL
V
LOV
=3V, I
L
=0mA, R
Ib-Gnd
=1MΩ
V
LOV
=0V, I
L
=10mA
LB Output High
V
LBH
V
LOV
=3V, I
L
=50mA
V
LOV
=0V, I
L
=0mA, R
hb-Csub
=1MΩ
HB Output Low
V
HBL
V
LOV
=3V, I
L
=0mA, R
hb-Gnd
=1MΩ
V
LOV
=0V, I
L
=10mA
HB Output High
V
HBH
V
LOV
=3V, I
L
=50mA
Note: Noise voltage measurement would be ignored in production.
Enabled
Enabled
Disabled
Disabled
Disabled
Disabled
Enabled
Enabled
0.02 0.15
1
-0.5
V
CC
-1.8
-3.05 -2.8
-2.55
-0.01
0
0.1
-0.025
0
0.025
2.9
3
3.1
-3.05 -2.80 -2.55
-0.01
0
0.1
-0.025
0
0.025
2.9
3
3.1
POLARITY SWITCH CHARACTERISTICS
PARAMETER
Input Current
Threshold Voltage
Switching Speed
SYMBOL
TEST CONDITIONS
I
POL
V
POL
=25V (Applied via R
POL
=2kΩ)
V
TPOL
V
POL
=25V (Applied via R
POL
=2kΩ)
T
SPOL
V
POL
=25V (Applied via R
POL
=2kΩ)
MIN
10
14
TYP
25
14.75
MAX
40
15.5
100
UNIT
μA
V
ms
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L8115
TYPCIAL CHARACTERISTICS
JFET Drain Current vs. Rcal
16
14
12
10
8
6
4
2
0
Vcc =5V
0
20
40
60
Rcal (k)
80
100
2.1
2
2.2
2.3
2.4
LINEAR INTEGRATED CIRCUIT
JFET Drain Voltage vs. Drain Current
10V
5V
8V
4
6
8
10
12
14
16
Drain Current (mA)
LB/HB Dropout Voltage vs. Load Current
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
0
10
20
30
40
50
Load Current (mA)
Ta=25°С
Vcc=5V
Ta=-40°С
4
2
0
-2
LB/HB Offset Voltage vs. Load Current
V
CC
=5V, V
LOV
=0V
Ta=70°С
Ta=25°С
Ta=-40°С
Ta=70°С
-4
-6
-8
0
10
20
30
40
50
Load Current (mA)
V
SUB
vs. External Load
-1.0
-1.5
-2.0
5V
-2.5
10V
-3.0
0
0.2
0.4
0.6
0.8
1.0
External V
SUB
Load (mA)
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