Ordering number : EN8321B
Monolithic Digital IC
LB11600JV
Overview
Brushless Motor Predriver IC for
Automotive Applications
The LB11600JV is a direct PWM drive predriver IC appropriate for 3-phase power brushless motors in automotive
applications. This IC can implement either high side PWM drive or low side PWM drive motor driver circuits depending
on the configuration of the output circuits, which use discrete transistors such as MOSFETs or bipolar transistors. In
addition to a full complement of protection functions, including overcurrent, thermal, motor constraint, and undervoltage
protection, the LB11600JV also provides an integrated speed control function. Thus the LB11600JV can implement high
reliability/high functionality drive circuits.
Functions
•
Three-phase bipolar drive (UH, VH, and WH pins, PWM control)
•
Forward/reverse switching circuit
•
Overcurrent protection circuit
•
Undervoltage protection circuit
•
Motor constraint protection circuit
•
Thermal protection circuit
•
Speed control circuit
Specifications
Absolute Maximum Ratings
at Ta = 25°C
Parameter
Supply voltage
Output Circuit current
Allowable power dissipation
Operating temperature
Storage temperature
Symbol
VCC max
IO max
Pd max
Topr
Tstg
VCC Pin
UL, VL, WL, UH, VH, and WH pins
Independent IC
Conditions
Rated value
14.5
40
0.5
-40 to 100
-55 to 150
Unit
V
mA
W
°C
°C
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system,
safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives
in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any
guarantee thereof. If you should intend to use our products for new introduction or other application different
from current conditions on the usage of automotive device, communication device, office equipment, industrial
equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the
intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely
responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
82511 SY/D2706 MS IM 20060831-S00005 / 92706 / D0205 MH OT B8-8935 No.8321-1/30
LB11600JV
Allowable Operating Ranges at
Ta = 25°C
Parameter
VCC voltage supply voltage range
Output current
RF pin voltage
HP pin voltage
HP pin voltage
Symbol
VCC
VCC op
VRF
VHP
IHP
VCC Pin
UL, VL, WL, UH, VH, and WH pins
Conditions
Rated value
4.5 to 14
30
0 to 3
0 to 14
0 to 10
Unit
V
mA
V
V
mA
Electrical Characteristics at
Ta = 25°C, VCC = 5V
Rated value
Parameter
Current drain 1
Current drain 2
Output Block
Output voltage 1-1
Output voltage 1-2
Output voltage 2
Hall Amplifier Block
Input bias current
Common-mode input
voltage range 1
Common-mode input
voltage range 2
Hall input sensitivity
Hysteresis
Input voltage (low
→
high)
Input voltage (high
→
low)
TOC Pin
Input voltage 1
Input voltage 2
Input voltage 1L
Input voltage 2L
Input voltage 1H
Input voltage 2H
CTL Pin
Input offset voltage
Input bias current
Common-mode input
voltage range
High-level output voltage
Low-level output voltage
PWM Oscillator (PWM pin)
High-level output voltage
Low-level output voltage
External capacitor charge
current
Oscillator frequency
Amplitude
HP Pin
Output saturation voltage
Output leakage current
VHPL
IHPleak
IO = 7mA
VO = 13.5V
0.15
0.5
10
V
μA
F (PWM)
Vp-p (PWM)
C = 1000pF
20
1.25
25
1.65
30
2.05
kHz
VP-P
VOH (PWM)
VOL (PWM)
1CHG
PWM = 2.1V
2.75
1.2
-60
3.0
1.35
-45
3.25
1.5
-30
V
V
μA
VOH (CONT)
VOL (CONT)
ITOC = -0.2mA
ITOC = 0.2mA
VCC-1.1
VCC-0.8
0.8
1.1
V
V
VIO (CONT)
IB (CONT)
VICM
-10
-1
0
10
1
VCC-1.7
mV
μA
V
VTOC1
VTOC2
VTOC1L
VTOC2L
VTOC1H
VTOC2H
Output duty: 100%
Output duty: 0%
When VCC = 4.7V
Output duty: 100%
When VCC = 4.7V,
Output duty: 0%
When VCC = 5.3V,
Output duty: 100%
When VCC = 5.3V,
Output duty: 0%
1.17
1.38
1.59
V
2.88
3.20
3.52
V
1.05
1.24
1.43
V
2.72
1.15
2.5
3.0
1.35
2.80
3.30
1.55
3.1
V
V
V
ΔVIN
(HA)
VSLH (HA)
VSHL (HA)
VICM2
When a single-sided input bias is used
(Hall IC applications)
80
15
5
-20
24
12
-12
40
20
-5
mVP-P
mV
mV
mV
0
VCC
V
IHB (HA)
VICM1
When a Hall effect element is used
-2
0.5
-0.5
VCC-2.0
μA
V
VOUT1-1
VOUT1-2
VOUT2
Low level, IO = 400µA
Low level, IO = 10mA
High level, IO = -20mA
VCC-1.1
0.1
0.8
VCC-0.9
0.3
1.1
V
V
V
Symbol
ICC1
ICC2
S/S = 0V
Stop mode, S/S = 5V
Conditions
Min.
13
1.5
Typ.
20
2.5
Max.
27
3.5
mA
mA
Unit
Continued on next page.
No.8321-2/30
LB11600JV
Continued from preceding page.
Rated value
Parameter
Symbol
Conditions
Min.
Motor Constraint Protection Circuit Block (CSD and CSET pins)
CSD saturation voltage
CSD off voltage
CSD voltage
CSET pin current
CSET pin on voltage
CSET pin off voltage
Current Limiter Circuit (RF pin)
Limiter voltage
RFGND pin current
Undervoltage Protection Circuit
Operating voltage
Release voltage
Hysteresis
VSDL
VSDH
ΔVSD
3.6
4.1
0.35
3.8
4.3
0.5
4.0
4.5
0.65
V
V
V
VRF
IRFGND
RFGND = 0V
0.216
-60
0.24
-40
0.264
-20
V
μA
VSCSD
VCSDOF
VCSD
ICSET
VCSETON
VCSETOFF
CSET = 4.9V
CSET = 4.8V
VCC - CSET pin
VCC - CSET pin
0.6
I0 = -0.5mA, VCC-VCSD
0.55
4.7
35
0.1
0.6
4.9
50
0.1
0.7
65
0.3
0.85
0.3
0.65
V
V
V
μA
V
V
Typ.
Max.
Unit
Thermal Shutdown Circuit (thermal protection circuit)
Thermal shutdown
temperature
Hysteresis
CEG Pin
CEG pin current
CEG pin on voltage
CEG pin off voltage
CR Pin
High-level output voltage
Low-level output voltage
Clamp voltage
FV Pin
Charge current
Discharge current
FV pin high-level voltage
FV pin low-level voltage
S/S Pin
High-level input voltage
Low-level input voltage
Input open voltage
Hysteresis
High-level input current
Low-level input current
F/R Pin
High-level input voltage
Low-level input voltage
Input open voltage
Hysteresis
High-level input current
Low-level input current
VIH (FR)
VIL (FR)
VIO (FR)
VIS (FR)
IIH (FR)
IIL (FR)
F/R = 5V
F/R = 0V
VCC-0.5
0.2
-10
-130
0.3
0
-96
2.0
1.0
VCC
0.4
10
V
V
V
V
μA
μA
VIH(SS)
VIL(SS)
VIO(SS)
VIS(SS)
IIH(SS)
IIL(SS)
S/S = 5V
S/S = 0V
VCC-0.5
0.2
-10
-130
0.3
0
-96
2.0
1.0
VCC
0.4
10
V
V
V
V
μA
μA
ICHG1
ICHG2
VOFVH
VOFVL
FV = 2.5V
FV = 1V
IO = -200μA
IO = 200μA
-420
1.3
4.7
-300
2.5
4.9
0.15
0.3
-230
5.0
μA
mA
V
V
VOH (CR)
VOL (CR)
VCLP (CR)
3.12
0.67
1.3
3.4
0.75
1.45
3.68
0.83
1.6
V
V
V
ICEG
VCEGON
VCEGOFF
CEG = 4.8V
VCC - CSET pin
VCC - CSET pin
0.6
35
50
0.1
0.7
65
0.3
0.85
μA
V
V
ΔTSD
Design target value (junction temperature)*
25
°C
TSD
Design target value (junction temperature)*
150
170
°C
*: These are design target value and are not tested.
Continued on next page.
No.8321-3/30
LB11600JV
Continued from preceding page.
Rated value
Parameter
PWMIN Pin
High-level input voltage
Low-level input voltage
Input open voltage
Hysteresis
High-level input current
Low-level input current
Input frequency
PWMRE Pin
PWMRE pin current
Threshold voltage
Hysteresis
IPWMIRE
PWMRETH
PWMREHYS
PWMRE = 0V
-260
1.12
0.44
-200
1.25
0.7
-140
1.38
1.1
μA
V
V
VIH (PWMIN)
VIL (PWMIN)
VIO (PWMIN)
VIS (PWMIN)
IIH (PWMIN)
IIL (PWMIN)
F (PWMIN)
PWMIN = 5V
PWMIN = 0V
VCC-0.5
0.2
-10
-130
0.3
0
-96
50
2.0
1.0
VCC
0.4
10
V
V
V
V
μA
μA
kHz
Symbol
Conditions
Min.
Typ.
Max.
Unit
Package Dimensions
unit : mm (typ)
3191C
9.75
30
5.6
7.6
1
0.65
(0.33)
(1.3)
1.5 MAX
0.22
0.15
SANYO : SSOP30(275mil)
Pin Assignment
WL
30
WH
29
RF
28
RFGND GND
27
26
S/S
25
VCC
24
PWMIN PWMRE CSET
23
22
21
CSD
20
PWM
19
TOC
18
CTL-
17
CTL+
16
0.1
1
VH
2
VL
3
UH
4
UL
5
IN1+
6
IN1-
0.5
LB11600JV
7
IN2+
8
IN2-
9
IN3+
10
IN3-
11
F/R
12
HP
13
CEG
14
CR
15
FV
Top view
No.8321-4/30
LB11600JV
Block Diagram and Application Circuit 1
: MOS transistor drive (low side PWM), speed control feedback application
No.8321-5/30
